Jun Hyung Lim

r&d center

H指数:31

被引数:3,125

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Effects of channel length on temperature dependence of apparent subthreshold swing in self-aligned top-gate coplanar IGZO thin-film transistors

通道长度对自对准顶栅共面IGZO薄膜晶体管中表观亚阈值摆幅温度依赖性的影响

Scientific Reports

IF3.9

2025-10-060

Stress-Relief Island Design of Island-Bridge Structured InZnO TFT for Form-Free Display Applications Using Spatial ALD

基于空间ALD的岛桥结构InZnO TFT的应力释放岛设计及其在无形态显示应用中的研究

ACS Applied Electronic Materials

IF4.7

2025-07-030

PRE

Development of a two-stage virtual impactor for the generation of micrometer-scale monodisperse aerosols

PARTICUOLOGY

IF4.3

2024-12-010

PRE

Double-gate metal-oxide TFT pixel circuit for improved luminance uniformity of mobile OLED display

JOURNAL OF INFORMATION DISPLAY

IF3.4

2024-11-141

Quantitative Dynamic Evolution of Unoccupied States in Hydrogen Diffused InGaZnSnO TFT under Positive Bias Temperature Stress

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2024-09-271

PRE

High-quality indium-gallium-zinc oxide films synthesized by atomic layer deposition using a single cocktail precursor based on a liquid-delivery system and their application in transistors and inverters

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2024-01-011

PRE

Quantitative analysis of defect states in InGaZnO within 2 eV below the conduction band via photo-induced current transient spectroscopy

SCIENTIFIC REPORTS

IF3.9

2023-08-173

OAAI

Theoretical Modeling of a Temperature-Dependent Threshold-Voltage Shift in Self-Aligned Coplanar IZTO Thin-Film Transistors

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2023-05-164

PRE

Hydrogen-Doping-Enabled Boosting of the Carrier Mobility and Stability in Amorphous IGZTO Transistors

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2022-12-1321

PRE

Tailored Self-Assembled Monolayer using Chemical Coupling for Indium-Gallium-Zinc Oxide Thin-Film Transistors: Multifunctional Copper Diffusion Barrier

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2022-12-032

PRE

Enhancement of visible light detection for indium-gallium-zinc oxide-based transparent phototransistor via application of porous-structured polytetrafluoroethylene

APPLIED PHYSICS LETTERS

IF3.6

2022-10-073

PRE

Structural, Optical, and Electrical Properties of InOX Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Flexible Device Applications

通过等离子体增强原子层沉积沉积的InOX薄膜的结构，光学和电学特性，用于柔性器件应用

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2022-05-2721

PRE

Improvement in performance of indium gallium oxide thin film transistor via oxygen mediated crystallization at a low temperature of 200 °C

CERAMICS INTERNATIONAL

IF5.6

2022-05-0125

PRE

Article Modulation of vacancy-ordered double perovskite Cs2SnI6 for air-stable thin-film transistors

用于空气稳定薄膜晶体管的空位有序双钙钛矿Cs2SnI6的文章调制

CELL REPORTS PHYSICAL SCIENCE

IF7.3

2022-04-0138

High-performance hysteresis-free perovskite transistors through anion engineering

通过阴离子工程实现高性能无滞后钙钛矿晶体管

NATURE COMMUNICATIONS

IF15.7

2022-04-0176

OAAI

Development of a high-volume ambient aerosol sampling inlet with an adjustable cutoff size and its performance evaluation using road dust

ENVIRONMENTAL RESEARCH

IF7.7

2022-03-016

PRE

Plasma-enhanced atomic-layer deposition of active layers of nanolaminated (InOx)n(GaZnOy)m for thin-film transistors

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2022-01-018

PRE

Significance of Pairing In/Ga Precursor Structures on PEALD InGaOx Thin-Film Transistor

In/Ga前驱体结构对PEALD InGaOx薄膜晶体管的意义

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2021-06-1132

PREAI

MoS2 doping by atomic layer deposition of high-k dielectrics using alcohol as process oxidants

APPLIED SURFACE SCIENCE

IF6.9

2021-03-017

PREAI

Boosting carrier mobility and stability in indium-zinc-tin oxide thin-film transistors through controlled crystallization

SCIENTIFIC REPORTS

IF3.9

2020-11-0229

OAAI

Jun Hyung Lim

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