Atsushi Hiraiwa - Publications, H-index & Citations

Atsushi Hiraiwa

Waseda University

28H指数

198论文数

2.5K被引数

收录论文 10

发表时间

DC and RF characteristics of scalable multi-finger 2DHG diamond MOSFETs with a source-via structure 可扩展的多指2DHG金刚石MOSFET的直流和射频特性（采用源极通孔结构）

Japanese Journal of Applied Physics

IF1.8

2026-01-30

PREAI

Ota, Kosuke; Chou, Yukihiro; Narita, Kento; Hashimoto, Yutaro; Takano, Yuki; Hiraiwa, Atsushi; Deura, Momoko; Ueda, Kenji; Kawarada, Hiroshi

Heavily Boron-Doped Source/Drain Layers for Low Contact Resistance and Subthreshold Swing in (001) C–H Diamond MOSFETs 高硼掺杂源/漏层用于(001) C–H金刚石MOSFET的低接触电阻和亚阈值摆幅

IEEE Electron Device Letters

IF4.5

2026-01-06

OAAI

Ryosuke Yamamoto; Kento Narita; Kosuke Ota; Nobutaka Oi; Atsushi Hiraiwa; Tatsuya Fujishima; Hiroshi Kawarada

Normally-off operation in vertical diamond MOSFETs using an oxidized Si-terminated diamond channel 使用氧化的Si终止金刚石沟道在垂直金刚石mosfet中的常关操作

CARBON

IF11.6

2023-09-01

PREAI

Ota, Kosuke; Fu, Yu; Narita, Kento; Wakabayashi, Chiyuki; Hiraiwa, Atsushi; Fujishima, Tatsuya; Kawarada, Hiroshi

Over 1 A/mm drain current density and 3.6 W/mm output power density in 2DHG diamond MOSFETs with highly doped regrown source/drain

CARBON

IF11.6

2022-03-01

OAAI

Kudara, Ken; Arai, Masakazu; Suzuki, Yukiko; Morishita, Aoi; Tsunoda, Jun; Hiraiwa, Atsushi; Kawarada, Hiroshi

Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors

SCIENTIFIC REPORTS

IF3.9

2018-07-13

OAAI

Oi, Nobutaka; Inaba, Masafumi; Okubo, Satoshi; Tsuyuzaki, Ikuto; Kageura, Taisuke; Onoda, Shinobu; Hiraiwa, Atsushi; Kawarada, Hiroshi

Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications

SCIENTIFIC REPORTS

IF3.9

2017-02-20

OAAI

Kawarada, Hiroshi; Yamada, Tetsuya; Xu, Dechen; Tsuboi, Hidetoshi; Kitabayashi, Yuya; Matsumura, Daisuke; Shibata, Masanobu; Kudo, Takuya; Inaba, Masafumi; Hiraiwa, Atsushi

Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate

APPLIED PHYSICS LETTERS

IF3.6

2016-07-18

PREAI

Inaba, Masafumi; Muta, Tsubasa; Kobayashi, Mikinori; Saito, Toshiki; Shibata, Masanobu; Matsumura, Daisuke; Kudo, Takuya; Hiraiwa, Atsushi; Kawarada, Hiroshi

Very low Schottky barrier height at carbon nanotube and silicon carbide interface 碳纳米管和碳化硅界面处的非常低的肖特基势垒高度

APPLIED PHYSICS LETTERS

IF3.6

2015-03-23

PREAI

Inaba, Masafumi; Suzuki, Kazuma; Shibuya, Megumi; Lee, Chih-Yu; Masuda, Yoshiho; Tomatsu, Naoya; Norimatsu, Wataru; Hiraiwa, Atsushi; Kusunoki, Michiko; Kawarada, Hiroshi

C-H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation

APPLIED PHYSICS LETTERS

IF3.6

2014-07-09

177

PREAI

Kawarada, H.; Tsuboi, H.; Naruo, T.; Yamada, T.; Xu, D.; Daicho, A.; Saito, T.; Hiraiwa, A.

Effects of Regrown Layer Thickness and Nitrogen Concentration on Current Rise at Low Drain Voltage in Vertical Diamond MOSFET 再生长层厚度和氮浓度对垂直金刚石MOSFET低漏电压下电流上升的影响

IEEE Transactions on Electron Devices

IF3.2

PREAI

Kosuke Ota; Koji Amazutsumi; Runming Zhang; Yuta Nameki; Naoya Niikura; Jun Tsunoda; Atsushi Hiraiwa; Hiroshi Kawarada

研究方向