Maojun Wang - Publications, H-index & Citations

Maojun Wang

Peking University

28H指数

209论文数

2.9K被引数

收录论文 26

发表时间

GaN-on-Si JBS Diode Using Drive-In Diffusion to Shield p-GaN Regrowth Interface and Achieving a Breakdown Voltage Beyond 1 kV 采用驱动扩散屏蔽p-GaN再生长界面并实现超过1 kV击穿电压的Si上GaN JBS二极管

IEEE Electron Device Letters

IF4.5

2026-09-01

PREAI

Liu, Sihang; Fu, Xingyu; Yang, Junjie; Cui, Jiawei; Chen, Zhenghao; Yang, Han; Li, Teng; Huang, Yuqi; Wang, Maojun; Shen, Bo; Yang, Xuelin; Wei, Jin

Revisiting the 1-D Theoretical Limit of Wide Bandgap Semiconductor Power Devices via Variational Calculus 通过变分法重新审视宽禁带半导体功率器件的一维理论极限

IEEE Electron Device Letters

IF4.5

2026-08-27

PREAI

Bo Li; Maojun Wang; Jin Wei; Bo Shen

2.3-kV Vertical GaN Trench MOSFET with Variable Lateral Ion-implanted Guard Rings 2.3-kV垂直GaN沟槽MOSFET与可变横向离子注入保护环

IEEE Electron Device Letters

IF4.5

2026-08-21

PREAI

Shihao Xu; Cui Yang; Wei Mao; Chao Liu; Ming Du; Ming Xiao; Yuanyuan Xie; Yu Duan; Yuchuan Ma; Changfa Sun; Dongguo Fan; Guoliang Peng; Kai Cheng; Maojun Wang; Li Zheng; Zhihong Liu; Jincheng Zhang; Yue Hao

Semiconducting p-GaN gate HEMT with avalanche-like non-destructive breakdown capability 半导体p-GaN栅极HEMT，具有类雪崩非破坏性击穿能力

Journal of Applied Physics

IF2.5

2026-05-28

PREAI

Yu, Jingjing; Yang, Junjie; Zheng, Qian; Liu, Sihang; Wang, Maojun; Yang, Xuelin; Shen, Bo; Wei, Jin

A Semi-Floating Gate GaN Memory Cell 半浮栅GaN存储单元

IEEE Electron Device Letters

IF4.5

2026-04-28

PREAI

Youyi Yin; Teng Li; Yunhong Lao; Junjie Yang; Hao Chang; Han Yang; Xuelin Yang; Maojun Wang; Yimao Cai; Bo Shen; Jin Wei

First-Principles Study of N₂ or H₂/N₂ Plasma Pretreatment: Effects on the Interface Properties in Si₃N₄/AlN/GaN MIS-HEMTs 基于第一性原理的研究：N₂或H₂/N₂等离子体预处理的界面性质对Si₃N₄/AlN/GaN MIS-HEMTs的影响

IEEE Transactions on Electron Devices

IF3.2

2026-04-14

PREAI

Jiaofen Yang; Ming Tao; Jing Xiao; Kai Tang; Yilan Chen; Wenjing Zhang; Bin Zhang; Bowen Huang; Jie Liu; Hongyue Wang; Jinyan Wang; Maojun Wang

10000-Cycle/10-μs Short Circuit Operation in 650-V E-Mode p-GaN Gate HEMT With Schottky Source Extension 10000-周期/10-μs短路操作在650-V E-Mode p-GaN栅高电子迁移率晶体管（HEMT）中的应用，该晶体管带有肖特基源扩展。

IEEE Transactions on Electron Devices

IF3.2

2026-02-03

PREAI

Yunhong Lao; Jingjing Yu; Qian Zheng; Junjie Yang; Youyi Yin; Teng Li; Qimeng Jiang; Gaofei Tang; Maojun Wang; Jin Wei

Impact of Extrinsic Resistance on Current Density of E-Mode GaN p-FETs: TCAD Study and Experimental Validation 外因电阻对E-模式GaN p-FETs电流密度的影响：TCAD研究与实验验证

IEEE Transactions on Electron Devices

IF3.2

2025-10-06

PREAI

Jialin Duan; Teng Li; Jingjing Yu; Hengyuan Qi; Yingming Song; Yunhong Lao; Junjie Yang; Youyi Yin; Xuelin Yang; Maojun Wang; Bo Shen; Jinyan Wang; Jin Wei

Demonstration of One Transistor-One Diode (1T1D) p-GaN/AlGaN/GaN Memory Cell 单晶体管-单二极管(1T1D) p-GaN/AlGaN/GaN存储单元的演示

IEEE Electron Device Letters

IF4.5

2025-08-01

PREAI

Youyi Yin; Teng Li; Junjie Yang; Jingjing Yu; Yunhong Lao; Hao Chang; Jialin Duan; Xiaosen Liu; Maojun Wang; Kechao Tang; Yimao Cai; Bo Shen; Jin Wei

RAPID LEAF FALLING 1 facilitates chemical defoliation and mechanical harvesting in cotton RAPID LEAF FALLING 1 基因促进棉花化学脱叶和机械采收

MOLECULAR PLANT

IF24.1

2025-05-01

PREAI

Zhang, Bing; Yue, Dandan; Han, Bei; Bao, Danfan; Zhang, Xiao; Hao, Xuyang; Lindsey, Keith; Lin, Xin; Zhu, Longfu; Jin, Shuangxia; Wang, Maojun; Xu, Haijiang; Du, Mingwei; Yu, Yu; Zhang, Xianlong; Yang, Xiyan

900-V active-passivation p-GaN gate HEMT with suppressed floating Si substrate induced back-gating effect

APPLIED PHYSICS LETTERS

IF3.6

2025-04-21

PREAI

Chang, Hao; Yang, Junjie; Yu, Jingjing; Cui, Jiawei; Yin, Youyi; Yang, Xuelin; Liu, Xiaosen; Wang, Maojun; Shen, Bo; Wei, Jin

GaN-on-sapphire JTE-anode lateral field-effect rectifier for improved breakdown voltage (>2.5 kV) and dynamic RON 蓝宝石上GaN JTE阳极横向场效应整流器，可提高击穿电压 (>2.5 kV) 和动态RON

APPLIED PHYSICS LETTERS

IF3.6

2024-10-22

PREAI

Cui, Jiawei; Yang, Junjie; Yu, Jingjing; Li, Teng; Yang, Han; Liu, Xiaosen; Wang, Jinyan; Wang, Maojun; Shen, Bo; Wei, Jin

Enhanced robustness against hot-electron-induced degradation in active-passivation p-GaN gate HEMT

APPLIED PHYSICS LETTERS

IF3.6

2024-03-04

PREAI

Yang, Junjie; Wei, Jin; Wu, Yanlin; Yu, Jingjing; Cui, Jiawei; Yang, Xuelin; Liu, Xiaosen; Wang, Jinyan; Hao, Yilong; Wang, Maojun; Shen, Bo

Analysis of Drain-Dependent Threshold Voltage and False Turn-On of Schottky-Type p-GaN Gate HEMT in Bridge-Leg Circuit 桥臂电路中肖特基型p-gan栅HEMT漏极相关阈值电压和误导通分析

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2024-02-01

PREAI

Fan, Zetao; Wang, Maojun; Wei, Jin; Nuo, Muqin; Zhou, Jin; Zhang, Jiaxin; Hao, Yilong; Shen, Bo

Impact of post-deposition annealing on the electronic properties of Al2O3/ GaN interface by first-principles study

SURFACES AND INTERFACES

IF6.3

2024-01-01

PREAI

Yang, Jiaofen; Tao, Ming; Xiao, Jing; Chen, Jiashu; Huang, Bowen; Liu, Jie; He, Min; Wang, Hongyue; Wang, Maojun

High-Frequency Three-Level Gate Driver for GaN HEMT Bridge Crosstalk Suppression

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2024-01-01

PREAI

Wang, Xiaonan; Tao, Ming; Xiao, Jing; Luo, Deng; He, Min; Zhou, Qian; Zhang, Xin; Wang, Maojun

Physical mechanism of field modulation effects in ion implanted edge termination of vertical GaN Schottky barrier diodes

FUNDAMENTAL RESEARCH

IF6.3

2022-07-01

OAAI

Yin, Ruiyuan; Li, Chiachia; Zhang, Bin; Wang, Jinyan; Fu, Yunyi; Wen, Cheng P.; Hao, Yilong; Shen, Bo; Wang, Maojun

1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer 4英寸独立式GaN晶圆上的1.3 kV垂直GaN基沟槽mosfet

NANOSCALE RESEARCH LETTERS

IF4.1

2022-01-15

OAAI

He, Wei; Li, Jian; Liao, Zeliang; Lin, Feng; Wu, Junye; Wang, Bing; Wang, Maojun; Liu, Nan; Chiu, Hsien-Chin; Kuo, Hao-Chung; Lin, Xinnan; Li, Jingbo; Liu, Xinke

Vacancy-engineering-induced dislocation inclination in III-nitrides on Si substrates

PHYSICAL REVIEW MATERIALS

IF3.4

2020-07-13

PREAI

Zhang, Jie; Yang, Xuelin; Feng, Yuxia; Li, Yue; Wang, Maojun; Shen, Jianfei; Wei, Lai; Liu, Danshuo; Wu, Shan; Cai, Zidong; Xu, Fujun; Wang, Xinqiang; Ge, Weikun; Shen, Bo

Vertical GaN Schottky barrier diodes on Ge-doped free-standing GaN substrates Ge掺杂的自支撑GaN衬底上的垂直GaN肖特基势垒二极管

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2019-04-01

PREAI

Gu, Hong; Hu, Cong; Wang, Jiale; Lu, Youming; Ao, Jin-Ping; Tian, Feifei; Zhang, Yi; Wang, Maojun; Liu, Xinke; Xu, Ke

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