A Semi-Floating Gate GaN Memory Cell

doi:10.1109/LED.2026.3686895

2026-04-28

PRE

DOI：10.1109/LED.2026.3686895

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摘要

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本研究报道了一种半浮栅（SFG）GaN存储单元。该器件基于标准商用p-GaN栅极HEMT晶圆制造，具有准单晶体管结构。存储操作通过在SFG中存储电荷实现——SFG是一个通过变薄的p-GaN桥与漏电极相连的p-GaN区域，并由栅绝缘体与控制栅隔离。控制栅位于SFG和p-GaN桥之上。在写入‘0’过程（W0）中，控制栅施加正向偏压，使SFG电位升高；空穴通过寄生p-GaN/AlGaN/GaN异质结二极管从SFG发射，导致正向${V}_{\text{TH}}$偏移。在写入‘1’过程（W1）中，控制栅施加负偏压，在p-GaN桥中形成导电路径，漏极接触的空穴通过该桥重新填充至SFG，导致负向${V}_{\text{TH}}$偏移。该器件展现出3.64 V的大${V}_{\text{TH}}$窗口和超过200的高电流比。这一进展为开发高密度智能GaN集成系统提供了重要的构建模块。

Keyword:

GaN memory

semi-floating gate

p-GaN gate HEMT

p-GaN bridge

charge storage

${V}_{\text {TH}}$ shift

期刊

IEEE Electron Device Letters

IF:

4.5

论文数:

759

被引数:

2.3W

机构

peking university

学者数:

11.9W

论文数: 8.7W

被引数: 146

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