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T

Takamitsu Ishiyama

research institute for energy efficient technologies

H指数:10

被引数:326

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Photoresponsivity of polycrystalline Ge layers on glass via sequential solid-phase and grain-templated growth

玻璃上多晶Ge层通过顺序固相生长和晶粒模板法制备的光响应性

MATERIALS & DESIGN

IF7.9

2026-05-230

OAAI

High-rate capability of III–V anodes enabled by machine-learning-guided compositional design

通过机器学习引导的组分设计实现的III–V阳极的高速率性能

Journal of Energy Storage

IF9.8

2026-02-230

OAAI

Demonstration of CMOS inverter on poly-crystalline Ge on glass

在玻璃衬底上多晶Ge CMOS反相器的演示

Materials Science in Semiconductor Processing

IF4.6

2026-02-090

OAAI

Ba2AgSi3 Thin Films: Growth, Thermoelectric Properties, and Control of Their Conductivity Type via Impurity Doping Using First-Principles Calculations

Ba2AgSi3薄膜：生长、热电性质及通过杂质掺杂控制其导电类型的第一性原理计算

ACS APPLIED ENERGY MATERIALS

IF5.5

2025-05-060

PRE

High-quality multilayer graphene on insulators via metal catalyst alloying in layer exchange with Bayesian optimization

通过金属催化剂合金化在层交换中采用贝叶斯优化的绝缘体上高质量多层石墨烯

IF2.6

2025-01-010

PRE

Semantic segmentation in crystal growth process using fake micrograph machine learning

SCIENTIFIC REPORTS

IF3.9

2024-08-210

OAAI

Grain-Boundary-Aligned Ge Thin Films Formed by Au-Induced Lateral Crystallization with a Multilayer Structure

CRYSTAL GROWTH & DESIGN

IF3.4

2024-05-020

PRE

Strain-dependent grain boundary properties of n-type germanium layers

SCIENTIFIC REPORTS

IF3.9

2024-04-031

OAAI

Bayesian optimization-driven enhancement of the thermoelectric properties of polycrystalline III-V semiconductor thin films

NPG ASIA MATERIALS

IF8.3

2024-03-291

OA

High thermoelectric performance in polycrystalline Yb3Ge5 thin films

IF4.5

2024-02-203

OA

Thermoelectric properties of low-temperature-grown polycrystalline InAs1-xSbx films

APPLIED PHYSICS LETTERS

IF3.6

2024-01-032

PRE

Metal-induced lateral crystallization of germanium thin films

MATERIALS & DESIGN

IF7.9

2023-08-018

OAAI

High-electron mobility P-doped polycrystalline GeSn layers formed on insulators at low temperatures

APPLIED PHYSICS LETTERS

IF3.6

2023-05-157

PRE

Interfacial Nucleation Control in Amorphous GeSn Thin Films Using Bilayer Structure

CRYSTAL GROWTH & DESIGN

IF3.4

2023-04-242

PRE

n-Type Polycrystalline Germanium Layers Formed by Impurity- Doped Solid-Phase Growth

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2023-01-039

OA

High Thermoelectric Performance in Polycrystalline GeSiSn Ternary Alloy Thin Films

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2022-11-309

PRE

Thickness Dependency of Battery Anode Properties in Multilayer Graphene

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2022-11-162

PRE

Acceptor defects in polycrystalline Ge layers evaluated using linear regression analysis

SCIENTIFIC REPORTS

IF3.9

2022-09-029

OAAI

Three-Dimensionally Orientation-Controlled Ge Rods on an Insulator Formed by Low-Temperature Ni-Induced Lateral Crystallization

CRYSTAL GROWTH & DESIGN

IF3.4

2022-01-184

PRE

Record-High Hole Mobility Germanium on Flexible Plastic with Controlled Interfacial Reaction

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2021-12-2130

PRE