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Eduardo Pérez

leibniz institute for high performance microelectronics

H指数:23

被引数:1,703

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Enabling Quantum-Compatible Nonvolatile Memory: Cryogenic Evaluation of 1T1R HfO2-Based RRAM From 300 to 1.5 K

实现量子兼容非易失性存储器：300 K至1.5 K范围内1T1R HfO2基RRAM的低温评估

Advanced Electronic Materials

IF5.3

2026-08-140

OAAI

Exploring variability and quantization effects in artificial neural networks the MNIST dataset

探索人工神经网络中变异性和量化效应：MNIST数据集

SOLID-STATE ELECTRONICS

IF1.4

2025-12-010

OAAI

ReFFT: An Energy-Efficient RRAM-Based FFT Accelerator

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

IF2.9

2025-10-300

OA

A closed-form model for programming of oxide-based resistive random access memory cells derived from the Stanford model

基于斯坦福模型的氧化物基电阻式随机存取存储器单元编程的封闭式模型

SOLID-STATE ELECTRONICS

IF1.4

2025-09-010

OAAI

End-to-End Design Flow for Resistive Neural Accelerators

电阻神经网络加速器的端到端设计流程

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

IF2.9

2025-08-080

OAAI

A comprehensive statistical study of the post-programming conductance drift in HfO2-based memristive devices

基于HfO2的忆阻器器件中后编程电导漂移的全面统计分析

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2025-05-300

OA

A Compact One-Transistor-Multiple-RRAM Characterization Platform

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS

IF5.2

2025-04-010

PRE

Influence of stop and gate voltage on resistive switching of 1T1R HfO2-based memristors, a modeling and variability analysis

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-11-010

OAAI

Blooming and pruning: learning from mistakes with memristive synapses

SCIENTIFIC REPORTS

IF3.9

2024-04-022

OAAI

Kinetic Monte Carlo simulation analysis of the conductance drift in Multilevel HfO2-based RRAM devices

IF5.1

2024-01-010

OA

TiN/Ti/HfO2/TiN memristive devices for neuromorphic computing: from synaptic plasticity to stochastic resonance

FRONTIERS IN NEUROSCIENCE

IF3.2

2023-09-197

OAAI

An energy-efficient in-memory computing architecture for survival data analysis based on resistive switching memories

FRONTIERS IN NEUROSCIENCE

IF3.2

2022-08-095

OAAI

Memristive-based in-memory computing: from device to large-scale CMOS integration

NEUROMORPHIC COMPUTING AND ENGINEERING

IF6.1

2021-11-184

OA

Neuromorphic on-chip recognition of saliva samples of COPD and healthy controls using memristive devices

SCIENTIFIC REPORTS

IF3.9

2020-11-1210

OAAI

Analogue pattern recognition with stochastic switching binary CMOS-integrated memristive devices

SCIENTIFIC REPORTS

IF3.9

2020-09-0228

OAAI

Multilevel HfO2-based RRAM devices for low-power neuromorphic networks

IF4.5

2019-08-26145

OAAI

Analysis of Parasitic Effects in Filamentary-Switching Memristive Memories Using an Approximated Verilog-A Memristor Model

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS

IF5.2

2019-05-012

PREAI

Operando diagnostic detection of interfacial oxygen breathing' of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy

MATERIALS RESEARCH LETTERS

IF7.9

2019-01-0420

OAAI

Impact of the precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO2 RRAM devices

SCIENTIFIC REPORTS

IF3.9

2018-07-2428

OAAI

Mechanism of the Key Impact of Residual Carbon Content on the Reliability of Integrated Resistive Random Access Memory Arrays

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2017-03-177

OAAI