Harm C. M. Knoops - Publications, H-index & Citations

Harm C. M. Knoops

Eindhoven University of Technology

37H指数

116论文数

4.0K被引数

收录论文 48

发表时间

Atomic Layer Etching of Nickel Using N2/H2 Plasma Exposure and Hexafluoroacetylacetone 采用N2/H2等离子体暴露和六氟乙酰丙酮的镍原子层刻蚀

ACS Applied Electronic Materials

IF4.7

2026-04-24

PREAI

Ali Mohamed Ali; Guillaume Krieger; Jean-Philippe Soulié; Harm C. M. Knoops; Wilhelmus M. M. Kessels; Stefan De Gendt; Souvik Kundu; Jean-François de Marneffe

Plasma-enhanced atomic layer deposition of Al2O3 on graphene via an in situ-deposited interlayer 通过原位沉积中间层在石墨烯上等离子体增强原子层沉积Al₂O₃

Materials Science in Semiconductor Processing

IF4.6

2025-07-10

OAAI

Sarah Riazimehr; Ardeshir Esteki; Martin Otto; Michael Powell; Gordon Rinke; Bianca Robertz; Zhenxing Wang; Max C. Lemme; Katie Hore; Harm Knoops

Superconducting NbxTi1-xN prepared at high deposition rates with plasma-enhanced atomic layer deposition and substrate biasing 通过等离子体增强原子层沉积和基板偏压制备的高沉积速率超导NbₓTi₁₋ₓN

AVS QUANTUM SCIENCE

IF3

2025-04-01

OAAI

Peeters, Silke A.; Nelissen, Lisa E. W. H. M.; Besprozvannyy, Dmytro; Choudhary, Nidhi; Lennon, Ciaran T.; Verheijen, Marcel A.; Powell, Michael; Bailey, Louise; Hadfield, Robert H.; Kessels, W. M. M. (Erwin); Knoops, Harm C. M.

Investigation of the atomic layer etching mechanism for Al2O3 using hexafluoroacetylacetone and H2 plasma

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2025-01-01

OAAI

Chittock, Nicholas J.; Maas, Joost F. W.; Tezsevin, Ilker; Merkx, Marc J. M.; Knoops, Harm C. M.; Kessels, Wilhelmus M. M. (Erwin); Mackus, Adriaan J. M.

Ultrathin superconducting TaCxN1-x films prepared by plasma-enhanced atomic layer deposition with ion-energy control 通过离子能量控制的等离子体增强原子层沉积制备的超薄超导TaCxN1-x薄膜

APPLIED PHYSICS LETTERS

IF3.6

2023-09-26

OAAI

Peeters, Silke A.; Lennon, Ciaran T.; Merkx, Marc J. M.; Hadfield, Robert H.; Kessels, W. M. M. (Erwin); Verheijen, Marcel A.; Knoops, Harm C. M.

Foundations of atomic-level plasma processing in nanoelectronics 纳米电子学原子级等离子体处理的基础

PLASMA SOURCES SCIENCE & TECHNOLOGY

IF3.3

2022-10-25

OAAI

Arts, Karsten; Hamaguchi, Satoshi; Ito, Tomoko; Karahashi, Kazuhiro; Knoops, Harm C. M.; Mackus, Adriaan J. M.; Kessels, Wilhelmus M. M. (Erwin)

Surface zeta potential and diamond growth on gallium oxide single crystal

CARBON

IF11.6

2021-08-01

OAAI

Mandal, Soumen; Arts, Karsten; Knoops, Harm C. M.; Cuenca, Jerome A.; Klemencic, Georgina M.; Williams, Oliver A.

Plasma-Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer 使用单层hBN作为界面层在石墨烯上等离子体增强原子层沉积Al2O3

ADVANCED MATERIALS TECHNOLOGIES

IF6.2

2021-07-26

OAAI

Canto, Barbara; Otto, Martin; Powell, Michael J.; Babenko, Vitaliy; O'Mahony, Aileen; Knoops, Harm C. M.; Sundaram, Ravi S.; Hofmann, Stephan; Lemme, Max C.; Neumaier, Daniel

Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2

CHEMISTRY OF MATERIALS

IF7

2021-04-29

OAAI

Arts, Karsten; Thepass, Harvey; Verheijen, Marcel A.; Puurunen, Riikka L.; Kessels, Wilhelmus M. M.; Knoops, Harm C. M.

Oxygen Recombination Probability Data for Plasma-Assisted Atomic Layer Deposition of SiO2 and TiO2

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2021-04-08

OAAI

Arts, Karsten; Deijkers, Sanne; Puurunen, Riikka L.; Kessels, Wilhelmus M. M.; Knoops, Harm C. M.

Reaction Mechanisms during Atomic Layer Deposition of AlF3 Using Al(CH3)3 and SF6 Plasma

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2021-02-10

OAAI

Vos, Martijn F. J.; Knoops, Harm C. M.; Kessels, Wilhelmus M. M.; Mackus, Adriaan J. M.

Atomic insights into the oxygen incorporation in atomic layer deposited conductive nitrides and its mitigation by energetic ions

NANOSCALE

IF5.1

2021-01-01

OAAI

Karwal, Saurabh; Karasulu, Bora; Knoops, Harm C. M.; Vandalon, Vincent; Kessels, Wilhelmus M. M.; Creatore, Mariadriana

Isotropic plasma atomic layer etching of Al2O3 using a fluorine containing plasma and Al(CH3)3

APPLIED PHYSICS LETTERS

IF3.6

2020-10-20

OAAI

Chittock, Nicholas J.; Vos, Martijn F. J.; Faraz, Tahsin; Kessels, Wilhelmus M. M. (Erwin); Knoops, Harm C. M.; Mackus, Adriaan J. M.

Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2: Impact on the growth per cycle and wet etch rate

APPLIED PHYSICS LETTERS

IF3.6

2020-07-22

OAAI

Arts, K.; Deijkers, J. H.; Faraz, T.; Puurunen, R. L.; Kessels, W. M. M. (Erwin); Knoops, H. C. M.

Atomic layer deposition of cobalt phosphate from cobaltocene, trimethylphosphate, and O2 plasma

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

IF2.1

2020-02-19

OAAI

Di Palma, Valerio; Knoops, Harm C. M.; Kessels, Wilhelmus M. M. (Erwin); Creatore, Mariadriana

Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3 and HfO2 (vol 123, pg 27030, 2019)

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2019-12-19

OAAI

Arts, Karsten; Utriainen, Mikko; Puurunen, Riikka L.; Kessels, Wilhelmus M. M.; Knoops, Harm C. M.

Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2 在SiO2，TiO2，Al2O3和HfO2的等离子体辅助原子层沉积过程中，薄膜的保形性和O原子的提取重组概率

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2019-10-16

OAAI

Arts, Karsten; Utriainen, Mikko; Puurunen, Riikka L.; Kessels, Wilhelmus M. M.; Knoops, Harm C. M.

Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties

PLASMA SOURCES SCIENCE & TECHNOLOGY

IF3.3

2019-02-28

OAAI

Faraz, Tahsin; Arts, Karsten; Karwal, Saurabh; Knoops, Harm C. M.; Kessels, Wilhelmus M. M.

Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies 在平面和3D衬底形貌上进行等离子体增强原子层沉积期间，通过衬底偏置调整氧化物和氮化物的材料特性

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2018-03-19

OAAI

Faraz, Tahsin; Knoops, Harm C. M.; Verheijen, Marcel A.; van Helvoirt, Cristian A. A.; Karwal, Saurabh; Sharma, Akhil; Beladiya, Vivek; Szeghalmi, Adriana; Hausmann, Dennis M.; Henri, Jon; Creatore, Mariadriana; Kessels, Wilhelmus M. M.

Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology

NANOSCALE

IF5.1

2018-01-01

107

OAAI

Sharma, Akhil; Verheijen, Marcel A.; Wu, Longfei; Karwal, Saurabh; Vandalon, Vincent; Knoops, Harm C. M.; Sundaram, Ravi S.; Hofmann, Jan P.; Kessels, W. M. M. (Erwin); Bol, Ageeth A.

研究方向