Yong Chan Jung

University of Texas Dallas

H指数:15

被引数:869

个人简介

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Experimental Demonstration of Capacitive in-Memory Computing Using Ferroelectric HZO Memcapacitors

使用铁电HZO memcapacitor进行电容式内存计算的实验演示

ADVANCED ELECTRONIC MATERIALS

IF5.3

2025-11-010

OAAI

Effect of La and Si additives in Zr-doped HfO2 capacitors for pseudo-linear high-κ dielectric applications

La和Si添加剂在掺Zr的HfO2电容器中用于伪线性高 κ 介电应用的影响

Nano Convergence

IF11

2025-03-060

OAAI

Thermal budget study to simultaneously achieve low-temperature (<400 °C) process and high endurance of ferroelectric Hf0.5Zr0.5O2 thin films

APPLIED PHYSICS LETTERS

IF3.6

2025-03-010

PRE

Toward Low-Thermal-Budget Hafnia-Based Ferroelectrics via Atomic Layer Deposition

通过原子层沉积实现低热预算的基于Hafnia的铁电体

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2023-09-0710

Robust low-temperature (350?) ferroelectric Hf0.5Zr0.5O2 fabricated using anhydrous H2O2 as the ALD oxidant

APPLIED PHYSICS LETTERS

IF3.6

2022-11-289

Relaxation Induced by Imprint Phenomena in Low-Temperature (400 °C) Processed Hf0.5Zr0.5O2-Based Metal-Ferroelectric-Metal Capacitors

在低温 (400 °C) 处理的基于Hf0.5Zr0.5O2的金属-铁电-金属电容器中，由压印现象引起的弛豫

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2022-02-148

PRE

Low-thermal-budget (300 °C) ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors realized using high-pressure annealing

APPLIED PHYSICS LETTERS

IF3.6

2021-12-1328

PRE

Microstructures of HfOx Films Prepared via Atomic Layer Deposition Using La(NO3)3•6H2O Oxidants

使用La(NO3)3 • 6H2O氧化剂通过原子层沉积制备的HfOx薄膜的微观结构

MATERIALS

IF3.2

2021-12-066

OAAI

Extremely Low Leakage Threshold Switch with Enhanced Characteristics via Ag Doping on Polycrystalline ZnO Fabricated by Facile Electrochemical Deposition for an X-Point Selector

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2021-04-059

PREAI

Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis

使用同步加速器x射线分析HfxZr1-xO2薄膜的铁电性和铁电正交相之间的相关性

APL MATERIALS

IF4.5

2021-03-2613

OAAI

Ferroelectric polarization retention with scaling of Hf0.5Zr0.5O2 on silicon

APPLIED PHYSICS LETTERS

IF3.6

2021-03-1023

OAAI

Improvement in ferroelectricity and breakdown voltage of over 20-nm-thick HfxZr1-xO2/ZrO2 bilayer by atomic layer deposition

APPLIED PHYSICS LETTERS

IF3.6

2020-12-0926

PREAI

Development of a multi-functional acrylic urethane coating with high hardness and low surface energy

PROGRESS IN ORGANIC COATINGS

IF7.3

2020-10-0110

PREAI

Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

以肼为氮源低温热原子层沉积氮化铝

MATERIALS

IF3.2

2020-07-3117

OAAI

A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2Thin Films

MATERIALS

IF3.2

2020-07-0235

OAAI

High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2020-01-017

PREAI

Synthesis of Ag-ZnO core-shell nanoparticles with enhanced photocatalytic activity through atomic layer deposition

MATERIALS & DESIGN

IF7.9

2019-09-0153

OAAI

Crystallized ZnO films by inserting the inert metal on ITO and their improved on/off current performance

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2019-07-012

PREAI

Effects of hydrogen annealing temperature on the resistive switching characteristics of HfOx thin films

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2018-12-0112

PREAI

Enhanced uniformity in electrical and optical properties of ITO thin films using a wide thermal annealing system

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2018-06-0131

PREAI

Yong Chan Jung

个人简介

教育背景

工作经历

荣誉奖项

研究方向