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Epitaxial registry and crystallinity of MoS2 via molecular beam and metalorganic vapor phase van der Waals epitaxyAPPLIED PHYSICS LETTERSIF3.62020-07-2015PREAI
Material-Selective Doping of 2D TMDC through AlxOy EncapsulationACS APPLIED MATERIALS & INTERFACESIF8.22019-10-1849PREAI
Systematic study of interfacial reactions induced by metal electrodes in high-k/InGaAs gate stacksAPPLIED PHYSICS LETTERSIF3.62016-10-2410PREAI
Comprehensive study of Cp2Mg p-type doping of InP with MOVPE growth techniqueMOVPE生长技术对InP的Cp2Mg p型掺杂的综合研究JOURNAL OF ALLOYS AND COMPOUNDSIF6.32015-12-015PREAI
Extracting the effective bandgap of heterojunctions using Esaki diode I-V measurementsAPPLIED PHYSICS LETTERSIF3.62015-08-176OAAI
Impact of field-induced quantum confinement on the onset of tunneling field-effect transistors: Experimental verificationAPPLIED PHYSICS LETTERSIF3.62014-11-1810PREAI
Antimony-Mediated Control of Misfit Dislocations and Strain at the Highly Lattice Mismatched GaSb/GaAs InterfaceACS APPLIED MATERIALS & INTERFACESIF8.22013-09-2513PREAI
The source of the threading dislocation in GaSb/GaAs hetero-structures and their propagation mechanismAPPLIED PHYSICS LETTERSIF3.62013-02-0425OA
Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) Silicon using a GaSb/GaP accommodation layerAPPLIED PHYSICS LETTERSIF3.62012-10-0132OAAI
Mechanism of formation of the misfit dislocations at the cubic materials interfacesAPPLIED PHYSICS LETTERSIF3.62012-06-2925OA
AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAsAPPLIED PHYSICS LETTERSIF3.62012-06-2514OAAI
GaSb/GaP compliant interface for high electron mobility AlSb/InAs heterostructures on (001) GaPAPPLIED PHYSICS LETTERSIF3.62010-11-1212OAAI