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stmicroelectronics, 95121 catania, italy

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被引数:2,790

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Impact of OFF-State Stress on Dynamic RON of On-Wafer 100 V p-GaN HEMTs, Studied by Emulating Monolithically Integrated Half-Bridge Operation

OFF态应力对晶圆上100 V p-GaN HEMT动态导通电阻的影响研究：通过模拟单片集成半桥运行方式进行分析

Electronics 2025, Vol. 14, Page 4756

IF2.6

2025-12-030

OAAI

On-Wafer Gate Screening Test for Improved Pre-Reliability in p-GaN HEMTs

基片上栅极筛选测试以提高p-GaN HEMTs的预可靠性

IF0

2025-08-080

OA

Tunneling and thermionic emission as charge transport mechanisms in W-based Schottky contacts on AlGaN/GaN heterostructures

APPLIED SURFACE SCIENCE

IF6.9

2025-01-011

OAAI

Two-dimensional electron gas isolation mechanism in Al0.2Ga0.8N/GaN heterostructure by low-energy Ar, C, Fe ion implantation

APPLIED SURFACE SCIENCE

IF6.9

2024-11-010

OAAI

Isolation of bidimensional electron gas in AlGaN/GaN heterojunction using Ar ion implantation

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2023-12-013

PRE

Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs

APPLIED PHYSICS LETTERS

IF3.6

2022-12-0720

OA

High-Performance Graphene/AlGaN/GaN Schottky Junctions for Hot Electron Transistors

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2019-10-1038

OAAI

Experimental and numerical analysis of VTH and RON drifts in E-mode GaN HEMTs during switch-mode operation

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2019-08-012

PREAI

Study of oxide trapping in SiC MOSFETs by means of TCAD simulations

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2019-07-019

PREAI

An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

IF3.2

2019-05-15211

OAAI

Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors

SiO2/4H-SiC MOS电容器中温度相关的fowler-nordheim电子势垒高度

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2018-05-0129

OAAI

Modification of the sheet resistance under Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructures

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2018-05-0113

PREAI

Review of technology for normally-off HEMTs with p-GaN gate

P-gan栅常断型hemt技术综述

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2018-05-01208

PREAI

Evolution of on-resistance (RON) and threshold voltage (VTH) in GaN HEMTs during switch-mode operation

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2018-05-0115

PREAI

Conduction Mechanisms at Interface of AIN/SiN Dielectric Stacks with AIGaN/GaN Heterostructures for Normally-off High Electron Mobility Transistors: Correlating Device Behavior with Nanoscale Interfaces Properties

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2017-09-2627

PREAI

Ohmic contacts to Gallium Nitride materials

APPLIED SURFACE SCIENCE

IF6.9

2016-10-01257

PREAI

Slow and fast traps in metal-oxide-semiconductor capacitors fabricated on recessed AlGaN/GaN heterostructures

APPLIED PHYSICS LETTERS

IF3.6

2015-04-0631

PREAI

Ti/Al ohmic contacts on AlGaN/GaN heterostructures with different defect density

APPLIED SURFACE SCIENCE

IF6.9

2014-09-0121

PREAI

Correlation between microstructure and temperature dependent electrical behavior of annealed Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures

APPLIED PHYSICS LETTERS

IF3.6

2013-11-1359

PREAI

Two-dimensional electron gas insulation by local surface thin thermal oxidation in AlGaN/GaN heterostructures

APPLIED PHYSICS LETTERS

IF3.6

2008-06-2412

PREAI