G. Molas - Publications, H-index & Citations

G. Molas

aix-marseille universite

31H指数

248论文数

3.2K被引数

收录论文 17

发表时间

Experimental Demonstration of Non-Stateful In-Memory Logic With 1T1R OxRAM Valence Change Mechanism Memristors

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS

IF4.9

2024-01-01

OAAI

Padberg, Henriette; Regev, Amir; Piccolboni, Giuseppe; Bricalli, Alessandro; Molas, Gabriel; Nodin, Jean Francois; Kvatinsky, Shahar

The gap between academia and industry in resistive switching research 电阻开关研究的学术界与工业界的差距

NATURE ELECTRONICS

IF40.9

2023-04-24

PREAI

Lanza, Mario; Molas, Gabriel; Naveh, Ishai

A self-adaptive hardware with resistive switching synapses for experience-based neurocomputing

NATURE COMMUNICATIONS

IF15.7

2023-03-21

OAAI

Bianchi, S.; Munoz-Martin, I.; Covi, E.; Bricalli, A.; Piccolboni, G.; Regev, A.; Molas, G.; Nodin, J. F.; Andrieu, F.; Ielmini, D.

Fully Binarized, Parallel, RRAM-Based Computing Primitive for In-Memory Similarity Search

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS

IF4.9

2023-01-01

OAAI

Kingra, Sandeep Kaur; Parmar, Vivek; Verma, Deepak; Bricalli, Alessandro; Piccolboni, Giuseppe; Molas, Gabriel; Regev, Amir; Suri, Manan

A high throughput generative vector autoregression model for stochastic synapses

FRONTIERS IN NEUROSCIENCE

IF3.2

2022-08-18

OAAI

Hennen, Tyler; Elias, Alexander; Nodin, Jean-Francois; Molas, Gabriel; Waser, Rainer; Wouters, Dirk J. J.; Bedau, Daniel

Dual-configuration in-memory computing bitcells using SiOx RRAM for binary neural networks

APPLIED PHYSICS LETTERS

IF3.6

2022-01-18

PREAI

Kingra, Sandeep Kaur; Parmar, Vivek; Negi, Shubham; Bricalli, Alessandro; Piccolboni, Giuseppe; Regev, Amir; Nodin, Jean-Francois; Molas, Gabriel; Suri, Manan

In Memory Energy Application for Resistive Random Access Memory

ADVANCED ELECTRONIC MATERIALS

IF5.3

2021-08-19

OAAI

Trotti, Paola; Oukassi, Sami; Molas, Gabriel; Bernard, Mathieu; Aussenac, Francois; Pillonnet, Gael

Write Termination Circuits for RRAM: A Holistic Approach From Technology to Application Considerations

IEEE ACCESS

IF3.6

2020-01-01

OAAI

Levisse, Alexandre; Bocquet, Marc; Rios, Marco; Alayan, Mouhamad; Moreau, Mathieu; Nowak, Etienne; Molas, Gabriel; Vianello, Elisa; Atienza, David; Portal, Jean-Michel

Switching Event Detection and Self-Termination Programming Circuit for Energy Efficient ReRAM Memory Arrays

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS

IF4.9

2019-05-01

OAAI

Alayan, M.; Muhr, E.; Levisse, A.; Bocquet, M.; Moreau, M.; Nowak, E.; Molas, G.; Vianello, E.; Portal, J. M.

Memory and Energy Storage Dual Operation in Chalcogenide-Based CBRAM

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY

IF2.4

2017-07-01

PREAI

Lee, Daeseok; Oukassi, Sami; Molas, Gabriel; Carabasse, Catherine; Salot, Raphael; Perniola, Luca

Grain boundary composition and conduction in HfO2: An ab initio study

APPLIED PHYSICS LETTERS

IF3.6

2013-05-24

PREAI

Xue, K. -H.; Blaise, P.; Fonseca, L. R. C.; Molas, G.; Vianello, E.; Traore, B.; De Salvo, B.; Ghibaudo, G.; Nishi, Y.

Passivated TiN nanocrystals/SiN trapping layer for enhanced erasing in nonvolatile memory

APPLIED PHYSICS LETTERS

IF3.6

2010-10-11

PREAI

Gay, G.; Belhachemi, D.; Colonna, J. P.; Minoret, S.; Brianceau, P.; Lafond, D.; Baron, T.; Molas, G.; Jalaguier, E.; Beaurain, A.; Pelissier, B.; Vidal, V.; De Salvo, B.

High density platinum nanocrystals for non-volatile memory applications

APPLIED PHYSICS LETTERS

IF3.6

2008-02-19

PREAI

Dufourcq, J.; Bodnar, S.; Gay, G.; Lafond, D.; Mur, P.; Molas, G.; Nieto, J. P.; Vandroux, L.; Jodin, L.; Gustavo, F.; Baron, Th.

Capacitance enhancement in Coulomb blockade tunnel barriers

PHYSICAL REVIEW B

IF3.7

2007-06-01

PREAI

Hofheinz, M.; Jehl, X.; Sanquer, M.; Molas, G.; Vinet, M.; Deleonibus, S.