Zhangang Zhang

China Electronic Product Reliability and Environmental Testing Research Institute

H指数:15

被引数:718

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Experiment and simulation of soft error characteristics in 14 nm FinFET and 28 nm SRAMs at 2400m deep underground

14 nm FinFET和28 nm SRAM在2400m深地下软错误特性的实验与仿真研究

Nuclear Engineering and Technology

IF2.6

2026-06-120

OAAI

Characteristics and mechanisms of single event upset induced by atmospheric neutrons in charge trap 3D NAND flash memory

大气中子引起的电荷捕获3D NAND闪存中单粒子翻转的特征与机制

Acta Physica Sinica

IF0.8

2026-02-050

PRE

Hydrogen Treatment-Induced Interface State Optimization in Ni/Au (001) β-Ga₂O₃ Schottky Barrier Diode

氢处理诱导的界面态优化在Ni/Au (001) <italic>β</italic>-Ga<sub>2</sub>O<sub>3</sub>肖特基势垒二极管中

IEEE Transactions on Electron Devices

IF3.2

2025-10-060

PRE

Comparison of SEB cross-sections between spallation neutron and mono-energetic proton for SiC MOSFETs

SiC MOSFETs中碎裂中子与单能质子作用下SEB横截面的比较

MICROELECTRONICS RELIABILITY

IF1.9

2025-10-010

PRE

Study of Displacement Damage in β-Ga₂O₃ Schottky Barrier Diodes Induced by 14-MeV Neutron Irradiation

14-MeV中子辐照诱导的β-Ga₂O₃肖特基势垒二极管位移损伤研究

IEEE Transactions on Electron Devices

IF3.2

2025-09-260

PRE

Investigation on Gate-Oxide Damage of SiC Power MOSFETs Induced by Heavy Ion

重离子诱导SiC功率MOSFET栅氧化物损伤的研究

IEEE Transactions on Electron Devices

IF3.2

2025-08-010

PRE

Single-event burnout in β-Ga2O3 Schottky barrier diode induced by high-energy proton

APPLIED PHYSICS LETTERS

IF3.6

2024-08-281

PRE

Investigation of proton irradiation induced EC-0.9 eV traps in AlGaN/GaN high electron mobility transistors

APPLIED PHYSICS LETTERS

IF3.6

2022-08-305

PRE

Mechanism of reverse gate leakage current reduction in AlGaN/GaN high-electron-mobility-transistor after 3-MeV proton irradiation

APPLIED PHYSICS LETTERS

IF3.6

2022-08-186

PRE

Research on Negative Bias Temperature Instability Effects Under the Coupling of Total Ionizing Dose Irradiation for PDSOI MOSFETs

总电离剂量耦合下PDSOI mosfet负偏压温度不稳定性效应研究

IEEE ACCESS

IF3.6

2021-01-013

OAAI

Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design

SCIENCE CHINA-INFORMATION SCIENCES

IF7.6

2020-11-194

PREAI

Investigation of Negative Bias Temperature Instability Effect in Partially Depleted SOI pMOSFET

IEEE ACCESS

IF3.6

2020-01-0112

OAAI

Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs

NUCLEAR SCIENCE AND TECHNIQUES

IF3.8

2019-04-1310

PREAI

Investigation of maximum proton energy for qualified ground-based evaluation of single-event effects in SRAM devices

NUCLEAR SCIENCE AND TECHNIQUES

IF3.8

2019-02-149

PREAI

Monte Carlo predictions of proton SEE cross-sections from heavy ion test data

CHINESE PHYSICS C

IF3.1

2016-06-099

OAAI

Modeling the applicability of linear energy transfer on single event upset occurrence

CHINESE PHYSICS C

IF3.1

2013-06-212

PREAI

Monte Carlo simulation based on Geant4 of single event upset induced by heavy ions

SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY

IF7.5

2013-05-079

PREAI

Impact failure prediction of Mode III crack in orthotropic functionally graded strip

THEORETICAL AND APPLIED FRACTURE MECHANICS

IF5.6

2003-07-0115

PREAI

Mechanism of Heavy Ion-Induced Leakage Current Increase in Normally-OFF p-GaN Gate HEMTs

常关型p-GaN栅HEMT中重离子诱导漏电流增加的机理

IEEE Transactions on Electron Devices

IF3.2

PRE

Zhangang Zhang

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