未登录

M

Maria Eloisa Castagna

st micro electronics

H指数:13

被引数:645

个人简介

暂无内容

教育背景

暂无内容

工作经历

暂无内容

荣誉奖项

暂无内容

Study of Gate Leakage Current and Failure Mechanism for Schottky-Type p-GaN Gate of GaN HEMTs

GaN HEMTs器件中肖特基型p-GaN栅的栅漏电流与失效机理研究

IF2.6

2026-04-170

OA

Experimental Evidence of Sustainable Avalanche Operation in E-Mode GaN HEMTs

E-模式GaN HEMTs中可持续雪崩运行模式的实验证据

IEEE Electron Device Letters

IF4.5

2025-11-130

OAAI

Two-dimensional electron gas isolation mechanism in Al0.2Ga0.8N/GaN heterostructure by low-energy Ar, C, Fe ion implantation

APPLIED SURFACE SCIENCE

IF6.9

2024-11-010

OAAI

Isolation of bidimensional electron gas in AlGaN/GaN heterojunction using Ar ion implantation

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2023-12-013

PRE

Reference Temperature Sensor for TMOS-Based Thermal Detectors

IF3.6

2023-01-010

OA

High Responsivity Thermopile Sensors Featuring a Mosaic Structure

IF3

2022-06-111

OAAI

A MEMS-CMOS Microsystem for Contact-Less Temperature Measurements

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS

IF5.2

2022-01-017

PRE

Non-Imaging Digital CMOS-SOI-MEMS Uncooled Passive Infra-Red Sensing Systems

IEEE SENSORS JOURNAL

IF4.5

2021-02-0116

PREAI

An Integrated Thermopile-Based Sensor with a Chopper-Stabilized Interface Circuit for Presence Detection

具有斩波稳定接口电路的基于热电堆的集成传感器，用于存在检测

IF3.5

2019-09-168

OAAI

An Integrated Micromachined Thermopile Sensor With a Chopper Interface Circuit for Contact-Less Temperature Measurements

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS

IF5.2

2019-09-0119

PREAI

A high stability and uniformity W micro hot plate

SENSORS AND ACTUATORS A-PHYSICAL

IF4.9

2018-08-0111

PREAI

Inductive Integrated Biosensor With Extended Operative Range for Detection of Magnetic Beads for Magnetic Immunoassay

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT

IF5.9

2017-02-0112

PREAI

Design and electro-optical characterization of Si-based resonant cavity light emitting devices at 850nm

JOURNAL OF LUMINESCENCE

IF3.6

2006-12-0110

PREAI

Si-based erbium-doped light-emitting devices

JOURNAL OF LUMINESCENCE

IF3.6

2006-12-0111

PREAI

Enhanced Gate Reliability of p-GaN/AlGaN/GaN HEMTs Due to Gate Hole Injection and Recombination

由于栅极空穴注入与复合导致的p-GaN/AlGaN/GaN HEMT栅极可靠性增强

IEEE Electron Device Letters

IF4.5

0

PRE