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收藏A Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance p-GaN Gate HEMTs Fabrication一种用于高性能p-gan栅极hemt制造的新型原子级蚀刻后表面增强工艺
Wang, Luyu; Zhang, Penghao; Zhu, Kaiyue; Wang, Qiang; Pan, Maolin; Sun, Xin; Huang, Ziqiang; Chen, Kun; Yang, Yannan; Xie, Xinling; Huang, Hai; Hu, Xin; Xu, Saisheng; Wu, Chunlei; Wang, Chen; Xu, Min; Zhang, David Wei
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收藏Impact of Stress and Dimension on Nanosheet Deformation during Channel Release of Gate-All-Around Device全环栅器件沟道释放过程中应力及尺寸对纳米片变形的影响
Yang, Jingwen; Chen, Kun; Wang, Dawei; Liu, Tao; Sun, Xin; Wang, Qiang; Huang, Ziqiang; Pan, Zhecheng; Xu, Saisheng; Wang, Chen; Wu, Chunlei; Xu, Min; Zhang, David Wei
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收藏Source/Drain Trimming Process to Improve Gate-All-Around Nanosheet Transistors Switching Performance and Enable More Stacks of Nanosheets源极/漏极修整工艺,可提高栅极全环纳米片晶体管的开关性能,并实现更多纳米片堆叠
Chen, Kun; Yang, Jingwen; Liu, Tao; Wang, Dawei; Xu, Min; Wu, Chunlei; Wang, Chen; Xu, Saisheng; Zhang, David Wei; Liu, Wenchao
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