Breakthrough in 19 nm half-pitch W damascene interconnects using nanoimprint lithography and atomic-scale processing采用纳米压印光刻和原子级加工实现19 nm半间距W镶嵌互连技术的突破Japanese Journal of Applied PhysicsIF1.82026-04-300PRE
Microwave characterization of tantalum superconducting resonators on silicon substrate with niobium buffer layerAPL MATERIALSIF4.52024-02-295OA
Quantification of Spin Drift in Devices with a Heavily Doped Si ChannelPHYSICAL REVIEW APPLIEDIF4.42019-04-0812PREAI
Study of tunneling transport in Si-based tunnel field-effect transistors with ON current enhancement utilizing isoelectronic trapAPPLIED PHYSICS LETTERSIF3.62015-02-2353PREAI
Suppression of threshold voltage variability of double-gate fin field-effect transistors using amorphous metal gate with uniform work functionAPPLIED PHYSICS LETTERSIF3.62013-04-2415PREAI
Metal carbide-induced negative flatband voltage shift in TaCx and HfCx/HfO2 gate stacksAPPLIED SURFACE SCIENCEIF6.92008-07-010PREAI
Systematic investigation on anomalous positive Vfb shift in Al-incorporated high-k gate stacksAPPLIED PHYSICS LETTERSIF3.62008-04-216PREAI
Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k/SiO2 interfaceAPPLIED PHYSICS LETTERSIF3.62008-04-01153PREAI
Effect of the interfacial SiO2 layer thickness on the dominant carrier type in leakage currents through HfAlOx/SiO2 gate dielectric filmsAPPLIED PHYSICS LETTERSIF3.62004-12-207PREAI
Unified analytic model of direct and Fowler-Nordheim tunnel currents through ultrathin gate oxidesAPPLIED PHYSICS LETTERSIF3.62000-11-2731PREAI
Ultrathin gate dielectrics for silicon nanodevicesSUPERLATTICES AND MICROSTRUCTURESIF3.32000-05-015PREAI
个人简介
教育背景
工作经历
荣誉奖项
未登录.png){kind=icon}
未登录个人简介教育背景工作经历荣誉奖项
研究方向