Jiafei Yao

Nanjing University of Posts and Telecommunications

H指数:14

被引数:759

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Comprehensive Investigation on Degradation of SiC SBD-Embedded MOSFET Under Repetitive UIS Stress

SiC SBD嵌入式MOSFET在重复UIS应力下的退化综合研究

IEEE Transactions on Electron Devices

IF3.2

2026-07-310

PRE

A Generalized Design Methodology for Multi-Input Collaborative-Flip Synchronized Switch Harvesting on Capacitors: From Theory to Optimization Strategy

多输入协同-翻转同步开关电容器能量采集的广义设计方法论：从理论到优化策略

IEEE Transactions on Very Large Scale Integration (VLSI) Systems

IF3.1

2026-04-160

PRE

A 24-MHz Crystal Oscillator With 6.9-μs Startup Time and 2% Injection-ΔF Tolerance Using Phase-Interpolator-Assisted Synchronized Injection

一种具有6.9-μs启动时间和2%注入-ΔF容差的相位插值器辅助同步注入型24-MHz晶体振荡器

IEEE Transactions on Circuits and Systems I-Regular Papers

IF5.2

2026-01-010

PRE

Output and transfer characteristics prediction of GaN HEMT via neural-network-based compact model parameters extraction☆

基于神经网络提取紧凑模型参数的GaN HEMT输出和转移特性预测☆

Microelectronics Journal

IF2.3

2025-12-010

PRE

4H-SiC superjunction MOSFET with integrated high-K gate dielectric and split gate

4H-SiC超结MOSFET，集成了高K栅介质和分裂栅极

Journal of Semiconductors

IF5.3

2025-08-010

PRE

A 4H-SiC TMOS with triple trenches and high-K dielectric

一种具有三重沟槽和高K介电层的4H-SiC TMOS

MICRO AND NANOSTRUCTURES

IF3

2025-05-010

PRE

A Cross-Scale Electrothermal Co-Simulation Approach for Power MOSFETs at Device-Package-Heatsink-Board Levels

器件封装散热板级功率mosfet的跨尺度电热协同仿真方法

MICROMACHINES

IF3

2024-10-311

OAAI

Revealing two-dimensional electric field crowding effect in breakdown performance of DPPT-TT polymer-based OFETs

APPLIED PHYSICS LETTERS

IF3.6

2024-09-180

PRE

A normally off high-voltage InGaZnO transistor with drain offset region modulated by an InZnO layer

APPLIED PHYSICS LETTERS

IF3.6

2024-08-050

PRE

Thermal-induced bandgap broadening phenomenon in copolymer organic semiconductors

APPLIED PHYSICS LETTERS

IF3.6

2024-06-171

PRE

Avalanche-like breakdown behavior of copolymer organic semiconductor-based Schottky junction structure

APPLIED PHYSICS LETTERS

IF3.6

2022-09-195

PRE

High-temperature reliability of all-oxide self-powered deep UV photodetector based on ε-Ga2O3/ZnO heterojunction

基于 ε-Ga2O3/ZnO异质结的全氧化物自供电深紫外光电探测器的高温可靠性

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2022-07-0725

PRE

Off-State Performance Characterization of an AlGaN/GaN Device via Artificial Neural Networks

基于人工神经网络的AlGaN/GaN器件关态性能表征

MICROMACHINES

IF3

2022-05-050

OAAI

Extraction of Interface-Trap Densities of the Stacked Bonding Structure in 3D Integration Using High-Frequency Capacitance-Voltage Technique

MICROMACHINES

IF3

2022-02-060

OAAI

Prediction of Static Characteristic Parameters of an Insulated Gate Bipolar Transistor Using Artificial Neural Network

用人工神经网络预测绝缘栅双极型晶体管的静态特性参数

MICROMACHINES

IF3

2021-12-214

OAAI

3-D analytical model of the high-voltage interconnection effect for SOI LDMOS

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2021-12-010

PRE

A Novel Step-Doped Channel AlGaN/GaN HEMTs with Improved Breakdown Performance

具有改进击穿性能的新型阶梯掺杂AlGaN/GaN hemt

MICROMACHINES

IF3

2021-10-144

OAAI

Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness

阶梯沟道厚度双栅隧道场效应晶体管的仿真研究

NANOSCALE RESEARCH LETTERS

IF4.1

2020-06-1515

OAAI

Analytical model for the potential and electric field distributions of AlGaN/GaN HEMTs with gate-connected FP based on Equivalent Potential Method

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2020-02-019

PREAI

3D analytical model for the SOI LDMOS with alternating silicon and high-k dielectric pillars

具有交替硅和高k介质柱的SOI LDMOS的3D分析模型

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2016-08-019

PREAI

Jiafei Yao

个人简介

教育背景

工作经历

荣誉奖项

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