Kemeng Yang

nanjing university of posts and telecommunications

H指数:13

被引数:543

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Comprehensive Investigation on Degradation of SiC SBD-Embedded MOSFET Under Repetitive UIS Stress

SiC SBD嵌入式MOSFET在重复UIS应力下的退化综合研究

IEEE Transactions on Electron Devices

IF3.2

2026-07-310

PRE

Low-power lead-free Cs3Bi2I9 perovskite memristors for neuromorphic visual recognition and associative learning

低功耗无铅Cs3Bi2I9钙钛矿忆阻器用于神经形态视觉识别和联想学习

Journal of Energy Chemistry

IF14.9

2026-06-220

PRE

Output and transfer characteristics prediction of GaN HEMT via neural-network-based compact model parameters extraction☆

基于神经网络提取紧凑模型参数的GaN HEMT输出和转移特性预测☆

Microelectronics Journal

IF2.3

2025-12-010

PRE

4H-SiC superjunction MOSFET with integrated high-K gate dielectric and split gate

4H-SiC超结MOSFET，集成了高K栅介质和分裂栅极

Journal of Semiconductors

IF5.3

2025-08-010

PRE

A 4H-SiC TMOS with triple trenches and high-K dielectric

一种具有三重沟槽和高K介电层的4H-SiC TMOS

MICRO AND NANOSTRUCTURES

IF3

2025-05-010

PRE

Revealing two-dimensional electric field crowding effect in breakdown performance of DPPT-TT polymer-based OFETs

APPLIED PHYSICS LETTERS

IF3.6

2024-09-180

PRE

A normally off high-voltage InGaZnO transistor with drain offset region modulated by an InZnO layer

APPLIED PHYSICS LETTERS

IF3.6

2024-08-050

PRE

Thermal-induced bandgap broadening phenomenon in copolymer organic semiconductors

APPLIED PHYSICS LETTERS

IF3.6

2024-06-171

PRE

Thickness dependence of superconductivity in layered GeP5

RARE METALS

IF11

2023-12-141

PRE

A two-dimensional Te/ReS2 van der Waals heterostructure photodetector with high photoresponsivity and fast photoresponse

NANOSCALE

IF5.1

2023-01-019

PRE

Vertical GaN Power MOSFET with Integrated Fin-Shaped Diode for Reverse Conduction

NANOSCALE RESEARCH LETTERS

IF4.1

2022-08-240

OAAI

High Performance Flip-Structure Enhancement-Mode HEMT with Face-to-Face Double Gates

具有面对面双栅极的高性能倒装结构增强模式HEMT

NANOSCALE RESEARCH LETTERS

IF4.1

2022-08-112

OAAI

Snapback-Free Reverse-Conducting SOI LIGBT with an Integrated Self-Biased MOSFET

NANOSCALE RESEARCH LETTERS

IF4.1

2022-04-181

OAAI

Design of few-layered 1T-MoS2 by supramolecular-assisted assembly with N-doped carbon quantum dots for supercapacitor

超分子辅助组装N掺杂碳量子点的多层1T-MoS2超级电容器设计

JOURNAL OF ELECTROANALYTICAL CHEMISTRY

IF4.1

2022-03-0125

PRE

A tellurium short-wave infrared photodetector with fast response and high specific detectivity

NANOSCALE

IF5.1

2022-01-0115

PRE

Supramolecular-induced confining methylene blue in three-dimensional reduced graphene oxide for high-performance supercapacitors

JOURNAL OF POWER SOURCES

IF7.9

2020-11-0136

PREAI

Layered molybdenum disulfide coated carbon hollow spheres synthesized through supramolecular self-assembly applied to supercapacitors

INTERNATIONAL JOURNAL OF ENERGY RESEARCH

IF4.2

2020-04-2122

OAAI

Holey graphene/MnO2 nanosheets with open ion channels for high-performance solid-state asymmetric supercapacitors

INTERNATIONAL JOURNAL OF ENERGY RESEARCH

IF4.2

2020-04-0113

OAAI

Analytical model for the potential and electric field distributions of AlGaN/GaN HEMTs with gate-connected FP based on Equivalent Potential Method

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2020-02-019

PREAI

A new physical insight of RESURF effects based on gradual charge appointment concept for bulk silicon lateral power devices

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2016-04-016

PREAI

Kemeng Yang

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