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Weifeng Sun

Southeast University

29H-index
559Paper Count
4.3KCitation Count
Published Papers 96
Publication Date
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Analysis on the Effect of Single Event in Terminal Region of Split-Gate-Trench nMOS
errIEEE Transactions on Electron Devices
IF3.2
err2026-10-08
err0
PREAI
errGuiqiang Zheng; Jiawei Dou; Yong Gu; Nannan Cheng; Yawen Xu; Yuncong Li; Jin Zhu; Jiyan Xu; Quan Yang; Jie Ma; Long Zhang; Siyang Liu; Weifeng Sun
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Experiments of a Novel Junction Field-Effect Transistor With Dual-Controlled 3-D Gates
errIEEE Transactions on Electron Devices
IF3.2
err2026-07-08
err0
PREAI
errNailong He; Teng Liu; Yuxiao Kun; Jiawei Wang; Xiaofeng Lai; Hao Wang; Ting Wang; Ziao Zhang; Liang Song; Sen Zhang; Jie Ma; Long Zhang; Shiyang Liu; Weifeng Sun
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Compact DC Modeling of SOI LDMOS Over a Wide Back-Gate Bias Range
errIEEE Transactions on Electron Devices
IF3.2
err2026-06-01
err0
PREAI
errJie Ma; Shuqiang Chen; Yong Gu; Zheng Zhang; Xinxin Liu; Dejin Wang; Siyang Liu; Long Zhang; Weifeng Sun
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Fractional-Turn Transformer With Flux Autobalancing Winding for High Power Density Primary Side Regulation Flyback Converters
errIEEE Transactions on Power Electronics
IF6.5
err2026-05-07
err0
PREAI
errSong Ding; Lei Li; Qi Liu; Qinsong Qian; Weifeng Sun
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A 26-42-GHz Broadband 2.8-dB NF LNA With Multidiode Thermo-Adaptive Biasing for SATCOM Applications
errIEEE Microwave and Wireless Technology Letters
IF3.4
err2026-05-01
err0
PREAI
errLi, Zhongliang; Wang, Qiangji; Wang, Yan; Jin, Guixiang; Wang, Wenbin; Liang, Jiangyuan; Wang, Wensong; Xu, Jiawei; Wang, Jiawen; Yan, Na; Huang, Hao; Sun, Weifeng; Fang, Zhongyuan
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A novel trench SiC MOSFET with an integrated double-JFET enabling enhanced reverse conduction path
errMicroelectronics Journal
IF2.3
err2026-05-01
err0
PREAI
errYu, Yiren; Miao, Ziyan; Shen, Jiayi; Fan, Xiangrui; Tian, Yu; Li, Sheng; Ye, Ran; Zhang, Long; Wei, Jiaxing; Liu, Siyang; Hu, Shengdong; Sun, Weifeng
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A Watt-Level 5.5-GHz GaAs HBT Power Amplifier With Optimized Linearity and Efficiency for UAV and IoT Networks
errIEEE Microwave and Wireless Technology Letters
IF3.4
err2026-05-01
err0
PREAI
errFang, Zhongyuan; Li, Zhongliang; Shan, Wenjing; Jin, Guixiang; Luo, Yi; Huang, Hao; Wang, Wenbin; Wang, Jiawen; Li, Yongjia; Wang, Qiangji; Sun, Weifeng
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A 15-MHz, 2.7-mm2 Notch-Free Hybrid Magnetic Current Sensor With Feedforward Ripple Cancellation and 0.8% Local Gain Non-Uniformity
errIEEE Journal of Solid-State Circuits
IF5.6
err2026-05-01
err0
PREAI
errCheng, Feng; Xia, Jianlin; Zhu, Encheng; Zhang, Long; Fang, Zhongyuan; Sun, Xiaofeng; Wang, Dejin; Li, Shaoping; Zhu, Jing; Li, Yongjia; Sun, Weifeng
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A 65-nm 3T2R ReRAM Computing-in-Memory Macro Using a 4-bit 1-GS/s Two-Stage Pipelined 2-bit Output Comparator With a Successive Approximation-Like Architecture
errIEEE Transactions on Very Large Scale Integration (VLSI) Systems
IF3.1
err2026-04-01
err0
PREAI
errXueyong Zhang; Jie Zhang; Yihang Chen; Weifeng Sun; Tony Tae-Hyoung Kim
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Flexible active-matrix micro-LED display with 1T-1FeMFET architecture featuring scaling-limit-free design
errNature Communications
IF15.7
err2026-03-31
err0
errOAAI
errTingrui Huang; Guangan Yang; Yimeng Sang; Fulin Zhuo; Mingming Liu; Gengyu Li; Heng Cheng; Zuoxu Yu; Zhiyuan Fu; Siyang Liu; Haoliang Shen; Zhihao Yu; Bin Liu; Xinran Wang; Wangran Wu; Runxiao Shi; Zhe Zhuang; Weifeng Sun
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Understanding Forward and Reverse Overcurrent-Induced Electrical Parameter Degradations of Cascode GaN HEMTs
errIEEE Journal of Emerging and Selected Topics in Power Electronics
IF4.9
err2026-02-03
err0
PREAI
errWeihao Lu; Sheng Li; Yanfeng Ma; Mingfei Li; Jie Ma; Ran Ye; Jiaxing Wei; Long Zhang; Leke Wu; Yiheng Li; Tinggang Zhu; Siyang Liu; Weifeng Sun
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errSave
A Bootstrap Diode Fabricated by a New 1200-V Silicon-on-Insulator Bipolar-CMOS-DMOS Process for High Voltage Integrated Circuits
errIEEE Electron Device Letters
IF4.5
err2026-01-12
err0
PREAI
errChengwu Pan; Mingxin Sun; Nailong He; Jiayu Li; Mengyan Wu; Dejin Wang; Sen Zhang; Yunwu Zhang; Jie Ma; Siyang Liu; Long Zhang; Weifeng Sun
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1100-V, 600-A/cm2 4H-SiC Lateral IGBT on N-Sub/N-Epi Stack With P-Top Protected Lightly Doped Drift Region
errIEEE Electron Device Letters
IF4.5
err2025-12-26
err0
PREAI
errJie Ma; Mengyao Zhao; Tianchun Nie; Yong Gu; Zhenya Wang; Runhua Huang; Song Bai; Jiaxing Wei; Sheng Li; Siyang Liu; Long Zhang; Weifeng Sun
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Mobility-Boosting Technique With Floating N-Islands for 4H-SiC LDMOS
errIEEE Electron Device Letters
IF4.5
err2025-12-26
err0
PREAI
errYong Gu; Tianchun Nie; Shuqiang Chen; Yawen Xu; Haining Shi; Runhua Huang; Song Bai; Jie Ma; Sheng Li; Jiaxing Wei; Long Zhang; Siyang Liu; Weifeng Sun
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A 12-bit 200 MS/s Current-Steering DAC Featuring PRDEM and 'Always-On' Current Sources for Low-Voltage Operation
errElectronics Letters
IF0.8
err2025-12-17
err0
errOAAI
errYuan, Jiayi; Zhang, Jiaming; Fan, Wangchen; Luo, Yi; Liu, Jiahao; Jin, Guixiang; Sun, Weifeng; Fang, Zhongyuan
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Investigation on the Isolation Approaches for High-Voltage GaN-on-Sapphire Monolithic Power Integrated Circuits
errMicromachines 2025, Vol. 16, Page 1336
IF3
err2025-11-27
err0
errOAAI
errSheng Li; Haiwei Zhang; Yanfeng Ma; Qinhan Wang; Ke Wang; Yuanyang Xia; Leke Wu; Yiheng Li; Tinggang Zhu; Ran Ye; Jiaxing Wei; Long Zhang; Siyang Liu; Weifeng Sun
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Exploring Short-Circuit Failure Mechanism of Cascode GaN HEMT
errIEEE Transactions on Power Electronics
IF6.5
err2025-09-18
err0
PREAI
errSheng Li; Qinhan Wang; Weihao Lu; Leke Wu; Yiheng Li; Tinggang Zhu; Ran Ye; Jie Ma; Jiaxing Wei; Long Zhang; Siyang Liu; Weifeng Sun
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A Monolithic GaN Power IC With Enhanced dVSW/dt Noise Immunity, Negative VSW Tolerance and Turn-On dVSW/dt Control
errIEEE Journal of Emerging and Selected Topics in Power Electronics
IF4.9
err2025-09-08
err0
PREAI
errYifei Zheng; Haoran Wang; Boyu Li; Weimin Yuan; Qianheng Dong; Jing Zhu; Weifeng Sun; Long Zhang; Siyuan Yu; Denggui Wang; Jianjun Zhou
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Effects of Passivation Layers on the Characteristics and Stability of Indium–Gallium–Zinc Oxide Thin-Film Transistors
errIEEE Transactions on Electron Devices
IF3.2
err2025-08-01
err0
PREAI
errYuzhen Zhang; Qiuxiao Feng; Wangran Wu; Runxiao Shi; Weifeng Sun; Man Wong
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errSave
Self-Enhanced Unclamped-Inductive-Switching Robustness of High-Voltage p-GaN Gate HEMT on Sapphire Substrate
errIEEE Transactions on Electron Devices
IF3.2
err2025-08-01
err0
PREAI
errSheng Li; Yanfeng Ma; Hao Yan; Mingfei Li; Weihao Lu; Ran Ye; Jiaxing Wei; Long Zhang; Tinggang Zhu; Yiheng Li; Siyang Liu; Weifeng Sun
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Co-authors
Cooperation Journals
张晓兵 cover
张晓兵 (Xiaobing Zhang)
H-index: 107 · Papers: 935
王剑 cover
王剑 (Jian Wang)
H-index: 106 · Papers: 2.1K
王
王欣然 (Xinran Wang)
H-index: 88 · Papers: 614
刘
刘琦 (Qi Liu)
H-index: 82 · Papers: 702
C
Chi Zhang
H-index: 81 · Papers: 637
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