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SaveA novel trench SiC MOSFET with an integrated double-JFET enabling enhanced reverse conduction path
Yu, Yiren; Miao, Ziyan; Shen, Jiayi; Fan, Xiangrui; Tian, Yu; Li, Sheng; Ye, Ran; Zhang, Long; Wei, Jiaxing; Liu, Siyang; Hu, Shengdong; Sun, Weifeng
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SaveA 15-MHz, 2.7-mm2 Notch-Free Hybrid Magnetic Current Sensor With Feedforward Ripple Cancellation and 0.8% Local Gain Non-Uniformity
Cheng, Feng; Xia, Jianlin; Zhu, Encheng; Zhang, Long; Fang, Zhongyuan; Sun, Xiaofeng; Wang, Dejin; Li, Shaoping; Zhu, Jing; Li, Yongjia; Sun, Weifeng
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SaveRotating multi-channel high-sensitivity integrating sphere gas sensing based on NDIR
Zhang, Songsong; Wu, Haitao; Liu, Shuning; Zhang, Long; Xu, Xiangbao; Luo, Huiming; Chen, Jiachang; Li, Jialin; He, Ting; Zhong, Fang; Li, Qing; Hu, Weida
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SaveMonolithically Integrated Bidirectional Gate ESD Protection Scheme of p-GaN Power HEMT by Dual-Gate Device Technology
Ma, Yanfeng; Li, Sheng; Li, Mingfei; Lu, Weihao; Wang, Lixi; Ma, Jie; Ye, Ran; Wei, Jiaxing; Zhang, Long; Zhang, Chi; Liu, Siyang; Sun, Weifeng
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SaveDemonstration of Integrated Quasi-Vertical DMOS Compatible with the Bipolar-CMOS-DMOS Process Achieving Ultralow RON,sp
Lin, Feng; Wu, Tuanzhuang; Wang, Weidong; Wang, Zhengxuan; Zhang, Yi; Li, Sheng; Ye, Ran; Zhang, Long; Wei, Jiaxing; Liu, Siyang; Sun, Weifeng
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SaveAn Economical Three-Dimension (3-D) Hall Device on 0.15-μm Bipolar-CMOS-DMOS (BCD) Platform
Zhang, Long; Zheng, Guiqiang; Li, Yichen; Li, Xueqi; Sun, Xiaofeng; Ma, Jie; Zou, Min; Wang, Dejin; Zhang, Sen; Li, Yongjia; Liu, Siyang; Sun, Weifeng
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