Not logged inContinuous-Wave Operation of InP Laser With Etched Facet Mirrors for Photonic Integrated Circuits
Xing, Zheng; Sun, Tianyu; Liu, Juncheng; Liu, Haipeng; Guo, Yujun; Zhou, Anwei; Qin, Bisheng; Ma, Chao; Huang, Zhuoer; Zeng, Zhongming; Zhang, Baoshun .png)
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SaveShare Save Share Save P-Type Electrical Activation in GaN by Mg Ion Implantation for PN JunctionsWang, Zheming; Wu, Zengyuan; Li, Fangzhi; Tang, Xi; Yin, Yulian; Zhang, Li; Zhang, Xuan; Yu, Guohao; Zeng, Zhongming; Zhang, Chunyu; Liu, Jianping; Cai, Yong; Zhang, Baoshun Share Save Share Save GaN high electron mobility transistors with a breakdown voltage over 2500 V achieved by low temperature MBE growth, subdivision of channel, and single field plate structureYang, Zhichao; Liao, Eason; Ding, Daniel; Zhuang, Jungang; Dong, Hao; Yang, Han; Zhu, Lei; Zhang, Bingliang; Yu, Guohao; Zeng, Zhongming; Zhang, Baoshun Share Save Share Save Share Save Share Save Share Save Suppression of Screw Dislocation-Induced Hillocks in MOCVD-Grown α-Ga2O3 on m-Plane Sapphire by Introducing a High-Temperature BufferLi, Zhucheng; Zhang, Xiaodong; Zhang, Li; Chen, Tiwei; Guo, Gaofu; Zhao, Dengrui; Hu, Yu; Zou, Zhili; Zhang, Huanyu; Xu, Kun; Yang, Feng; Yu, Guangyuan; Mu, Wenxiang; Zeng, Zhongming; Zhang, Baoshun Share Save Improved threshold voltage stability for GaN p-channel field effect transistors by hydrogen plasma treatmentYue, Huixin; Yu, Guohao; Guo, Bohan; Li, Yu; Li, Ang; Lu, Shaoqian; Zhou, Jiaan; Xing, Runxian; Yang, An; Hao, Chunfeng; Jiang, Jinxia; Zhang, Yuxiang; Cai, Yong; Zeng, Zhongming; Zhang, Baoshun Share Save A Broadband Multi-Channel Metasurface for Decoupling of Phase and PolarizationChen, Chen; Li, Chang; Lv, Baiying; Huang, Jie; Zhang, Baoshun; Zeng, Zhongming; Wang, Lei; Lin, Jie; Wang, Yiqun; Jin, Peng Share Save Share Save High quality of N-polar GaN film fabricated by layer transfer technology using high selective material removal rate of CMPYu, Zicheng; Zhang, Li; Yu, Guohao; Deng, Xuguang; Jiang, Chunyu; Tang, Wenxin; Yin, Haotian; Liu, Weining; Chen, Zhang; Zhang, Baoshun Share Save Share Save Dual Current and Voltage Sensitivity Temperature Sensor Based on Lateral p-GaN/AlGaN/GaN Hybrid Anode DiodeWei, Xing; Zhang, Xiaodong; Zhou, Xin; Ma, Yongjian; Tang, Wenbo; Chen, Tiwei; Liu, Weining; Tang, Wenxin; Yu, Guohao; Fan, Yaming; Fu, Kai; Cai, Yong; Zhang, Baoshun Share Save Share Save Share Save Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistorsXu, Ning; Hao, Ronghui; Chen, Fu; Zhang, Xiaodong; Zhang, Hui; Zhang, Peipei; Ding, Xiaoyu; Song, Liang; Yu, Guohao; Cheng, Kai; Cai, Yong; Zhang, Baoshun Share Save 
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