Han Yang - Publications, H-index & Citations

Han Yang

Peking University

7H指数

29论文数

147被引数

收录论文 11

发表时间

GaN-on-Si JBS Diode Using Drive-In Diffusion to Shield p-GaN Regrowth Interface and Achieving a Breakdown Voltage Beyond 1 kV 采用驱动扩散屏蔽p-GaN再生长界面并实现超过1 kV击穿电压的Si上GaN JBS二极管

IEEE Electron Device Letters

IF4.5

2026-09-01

PREAI

Liu, Sihang; Fu, Xingyu; Yang, Junjie; Cui, Jiawei; Chen, Zhenghao; Yang, Han; Li, Teng; Huang, Yuqi; Wang, Maojun; Shen, Bo; Yang, Xuelin; Wei, Jin

Monolithically integrating polarization-doped InGaN p-FET and GaN n-FET for complementary logic circuitry 将极化掺杂InGaN p-FET与GaN n-FET单片集成用于互补逻辑电路

Science Advances

IF12.5

2026-08-07

OAAI

Jingjing Yu; Teng Li; Yunhong Lao; Junjie Yang; Jiawei Cui; Sihang Liu; Han Yang; Youyi Yin; Maojun Wang; Xuelin Yang; Kevin J. Chen; Bo Shen; Jin Wei

A Semi-Floating Gate GaN Memory Cell 半浮栅GaN存储单元

IEEE Electron Device Letters

IF4.5

2026-04-28

PREAI

Youyi Yin; Teng Li; Yunhong Lao; Junjie Yang; Hao Chang; Han Yang; Xuelin Yang; Maojun Wang; Yimao Cai; Bo Shen; Jin Wei

Anomalous carbon lattice sites around threading screw dislocations in semi-insulating GaN 半绝缘GaN中沿穿透螺位错周围的异常碳晶格位点

AIP Advances

IF1.4

2026-01-01

OAAI

Shen, Zhaohua; Yang, Xuelin; Chen, Zhenghao; Yang, Han; Song, Yingming; Liu, Xuan; Yang, Zhijian; Tang, Ning; Xu, Fujun; Wang, Xinqiang; Shen, Bo

Layer Dependence and Point Defect for Sub-5 nm 2D Hydrogenated GaN Transistors 层依赖性与点缺陷对亚5纳米二维氢化GaN晶体管的影响

ACS Applied Electronic Materials

IF4.7

2025-11-10

PREAI

Tao Zheng; Shibo Fang; Jin Wang; Zongmeng Yang; Xingyue Yang; Shuang Zhao; Gehui Zhang; Fengping Luo; Han Yang; Yee Sin Ang; Jing Lu; Xuelin Yang; Yugang Wang; Chenxu Wang

Thermal transport in heavy-ion irradiated GaN: The effect of static and dynamic annealing 重离子辐照GaN中的热输运：静态和动态退火效应

JOURNAL OF APPLIED PHYSICS

IF2.5

2025-10-14

OAAI

Yan, Wujuan; Xue, Yuanyuan; Zhou, Wenjiang; Yang, Han; Guo, Haichang; Wang, Yuxi; Zhang, Kexin; Ding, Lili; Chen, Zhizhong; Yang, Xuelin; Shen, Bo; Chen, Wei; Song, Bai

Suppressed Thermal Conductivity in van der Waals Semiconductor SnS2 by Stacking Engineering 通过堆叠工程抑制范德华半导体SnS2的热导率

ADVANCED ENERGY AND SUSTAINABILITY RESEARCH

IF5.7

2025-04-21

OAAI

Yang, H; Min, CS; Li, C; Yu, Y; Ge, BZ; Zhou, CJ

High mobility p-channel GaN heterostructures grown by MOCVD through impurity engineering

APPLIED PHYSICS LETTERS

IF3.6

2024-12-16

PREAI

Wu, Junkang; Yang, Xuelin; Song, Yingming; Yang, Han; Chen, Zhenghao; Fu, Xingyu; Yang, Zhijian; Zhang, Shixiong; Shen, Bo

GaN-on-sapphire JTE-anode lateral field-effect rectifier for improved breakdown voltage (>2.5 kV) and dynamic RON 蓝宝石上GaN JTE阳极横向场效应整流器，可提高击穿电压 (>2.5 kV) 和动态RON

APPLIED PHYSICS LETTERS

IF3.6

2024-10-22

PREAI

Cui, Jiawei; Yang, Junjie; Yu, Jingjing; Li, Teng; Yang, Han; Liu, Xiaosen; Wang, Jinyan; Wang, Maojun; Shen, Bo; Wei, Jin

Au ion irradiation induces ultralow thermal conductivity in GaN

APPLIED PHYSICS LETTERS

IF3.6

2024-07-17

PREAI

Yan, Wujuan; Xue, Yuanyuan; Zhou, Wenjiang; Wang, Yuxi; Guo, Haichang; Yang, Han; Yang, Hongcai; Jiang, Zhiyao; Ding, Lili; Chen, Wei; Shen, Bo; Yang, Xuelin; Song, Bai

Thermally stable radiative recombination centers within trench structures of red multi-quantum wells 红色多量子阱沟槽结构内的热稳定辐射复合中心

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2024-03-22

PREAI

Pan, Zuojian; Yang, Han; Chen, Zhizhong; Zhang, Haodong; Deng, Chuhan; Wang, Zeren; Chen, Weihua; Kang, Xiangning; Jia, Chuanyu; Liang, Zhiwen; Wang, Qi; Zhang, Guoyi; Shen, Bo

研究方向