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E

E. Miranda

universitat autonoma de barcelona

41H指数
397论文数
7.4K被引数
收录论文 58
发表时间
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Modeling and Simulation of Hysteron Dynamics in HfO2-Based Memristive DevicesHfO2基忆阻器中 hysterons 动态的建模与仿真
errIEEE Electron Device Letters
IF4.5
err2026-03-30
err0
errOAAI
errE. Miranda; H. García; G. Vinuesa; J. Suñé; F. Campabadal; M. B. González; H. Castán; S. Dueñas
err分享
err收藏
SPICE-Compatible Compact Modeling of Cuprate-Based Memristors Across a Wide Temperature Range
errAdvanced Electronic Materials
IF5.3
err2026-03-27
err0
errOAAI
errThomas Günkel; Aleix Barrera; Lluís Balcells; Narcís Mestres; Enrique Miranda; Anna Palau; Jordi Suñé
err分享
err收藏
Spectral-Energy Trade-Offs in Memristor Programming Using Generalized Gaussian Voltage Pulses使用广义高斯电压脉冲进行忆阻器编程时的谱能权衡
errIEEE Electron Device Letters
IF4.5
err2026-01-15
err0
errOAAI
errE. Miranda; E. Piros; T. Kim; P. Schreyer; J. Gehrunger; T. Oster; J. Suñé; C. Hochberger; L. Alff
err分享
err收藏
Trap-Controlled Conduction and Metal-Insulator Transition in Superconducting Cuprate Memristors
errACS Applied Electronic Materials
IF4.7
err2026-01-01
err1
errOAAI
errGunkel, Thomas; Miranda, Enrique; Balcells, Lluis; Mestres, Narcis; Palau, Anna; Sune, Jordi
err分享
err收藏
Behavioral SPICE model for memristive crosspoint arrays operating in the nonlinear transport regime用于在非线性传输模式下运行的忆阻器交叉点阵列的行为SPICE模型
errSOLID-STATE ELECTRONICS
IF1.4
err2025-11-01
err0
errOAAI
errPerez, X.; Picos, R.; Sune, J.; Miranda, E.
err分享
err收藏
A quantum resistance memristor for an intrinsically traceable International System of Units standard用于本质可追溯的国际单位制标准的量子电阻忆阻器
errNature Nanotechnology
IF34.9
err2025-10-27
err0
errOAAI
errGianluca Milano; Xin Zheng; Fabio Michieletti; Giuseppe Leonetti; Gabriel Caballero; Ilker Oztoprak; Luca Boarino; Özgür Bozat; Luca Callegaro; Natascia De Leo; Isabel Godinho; Daniel Granados; Itir Koymen; Mariela Menghini; Enrique Miranda; Luís Ribeiro; Carlo Ricciardi; Jordi Suñe; Vitor Cabral; Ilia Valov
err分享
err收藏
Enhanced Linear Conductance Modulation by La-Doping in HfO2-Based Memristors for Neuromorphic Applications通过La掺杂增强HfO2基忆阻器的线性电导调制，用于神经形态应用
errAdvanced Electronic Materials
IF5.3
err2025-10-24
err0
errOAAI
errTaewook Kim; Márton Major; Enrique Miranda; Philipp Schreyer; Yingxin Li; Yu Duan; Alexey Arzumanov; Tobias Vogel; Nico Kaiser; Eszter Piros; Lambert Alff
err分享
err收藏
Reliability Assessment of Optical Physical Unclonable Functions Based on the Spatial Distribution of Catastrophic Failure Sites in MIM Structures
errIEEE ACCESS
IF3.6
err2025-01-01
err0
errOAAI
errPorti, Marc; Solis, Alvaro; Calatayud, Alex; Nafria, Montserrat; Miranda, Enrique
err分享
err收藏
Hardware implementation of memristor-based artificial neural networks基于忆阻器的人工神经网络的硬件实现
errNATURE COMMUNICATIONS
IF15.7
err2024-03-04
err41
errOAAI
errAguirre, Fernando; Sebastian, Abu; Le Gallo, Manuel; Song, Wenhao; Wang, Tong; Yang, J. Joshua; Lu, Wei; Chang, Meng-Fan; Ielmini, Daniele; Yang, Yuchao; Mehonic, Adnan; Kenyon, Anthony; Villena, Marco A.; Roldan, Juan B.; Wu, Yuting; Hsu, Hung-Hsi; Raghavan, Nagarajan; Sune, Jordi; Miranda, Enrique; Eltawil, Ahmed; Setti, Gianluca; Smagulova, Kamilya; Salama, Khaled N.; Krestinskaya, Olga; Yan, Xiaobing; Ang, Kah-Wee; Jain, Samarth; Li, Sifan; Alharbi, Osamah; Pazos, Sebastian; Lanza, Mario
err分享
err收藏
Revealing the quantum nature of the voltage-induced conductance changes in oxygen engineered yttrium oxide-based RRAM devices
errSCIENTIFIC REPORTS
IF3.9
err2024-01-11
err4
errOAAI
errAguirre, F. L.; Piros, E.; Kaiser, N.; Vogel, T.; Petzold, S.; Gehrunger, J.; Hochberger, C.; Oster, T.; Hofmann, K.; Sune, J.; Miranda, E.; Alff, L.
err分享
err收藏
A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2024-01-01
err2
errOAAI
errMaldonado, D.; Vinuesa, G.; Aldana, S.; Aguirre, F. L.; Cantudo, A.; Garcia, H.; Gonzalez, M. B.; Jimenez-Molinos, F.; Campabadal, R.; Miranda, E.; Duenas, S.; Castan, H.; Roldan, J. B.
err分享
err收藏
Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2023-06-12
err7
PREAI
errGarcia, H.; Vinuesa, G.; Garcia-Ochoa, E.; Aguirre, F. L.; Gonzalez, M. B.; Jimenez-Molinos, F.; Campabadal, F.; Roldan, J. B.; Miranda, E.; Duenas, S.; Castan, H.
err分享
err收藏
Variability in Resistive Memories电阻式存储器的可变性
errADVANCED INTELLIGENT SYSTEMS
IF6.1
err2023-03-14
err60
errOAAI
errRoldan, Juan. B.; Miranda, Enrique; Maldonado, David; Mikhaylov, Alexey. N.; Agudov, Nikolay., V; Dubkov, Alexander. A.; Koryazhkina, Maria. N.; Gonzalez, Mireia. B.; Villena, Marco. A.; Poblador, Samuel; Saludes-Tapia, Mercedes; Picos, Rodrigo; Jimenez-Molinos, Francisco; Stavrinides, Stavros. G.; Salvador, Emili; Alonso, Francisco. J.; Campabadal, Francesca; Spagnolo, Bernardo; Lanza, Mario; Chua, Leon. O.
err分享
err收藏
Experimental and Modeling Study of Metal-Insulator Interfaces to Control the Electronic Transport in Single Nanowire Memristive Devices金属-绝缘体界面控制单纳米线忆阻器件中电子输运的实验和建模研究
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2022-11-17
err8
errOAAI
errMilano, Gianluca; Miranda, Enrique; Fretto, Matteo; Valov, Ilia; Ricciardi, Carlo
err分享
err收藏
Fast Fitting of the Dynamic Memdiode Model to the Conduction Characteristics of RRAM Devices Using Convolutional Neural Networks
errMICROMACHINES
IF3
err2022-11-17
err4
errOAAI
errAguirre, Fernando Leonel; Piros, Eszter; Kaiser, Nico; Vogel, Tobias; Petzold, Stephan; Gehrunger, Jonas; Oster, Timo; Hochberger, Christian; Sune, Jordi; Alff, Lambert; Miranda, Enrique
err分享
err收藏
Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications忆阻器件中的量子电导: 基本原理、发展和应用
errADVANCED MATERIALS
IF26.8
err2022-07-01
err52
errOAAI
errMilano, Gianluca; Aono, Masakazu; Boarino, Luca; Celano, Umberto; Hasegawa, Tsuyoshi; Kozicki, Michael; Majumdar, Sayani; Menghini, Mariela; Miranda, Enrique; Ricciardi, Carlo; Tappertzhofen, Stefan; Terabe, Kazuya; Valov, Ilia
err分享
err收藏
Connectome of memristive nanowire networks through graph theory
errNEURAL NETWORKS
IF6.3
err2022-06-01
err28
errOAAI
errMilano, Gianluca; Miranda, Enrique; Ricciardi, Carlo
err分享
err收藏
Nano-Memristors with 4 mV Switching Voltage Based on Surface-Modified Copper Nanoparticles
errADVANCED MATERIALS
IF26.8
err2022-04-11
err14
PREAI
errLiu, Peisong; Hui, Fei; Aguirre, Fernando; Saiz, Fernan; Tian, Lulu; Han, Tingting; Zhang, Zhijun; Miranda, Enrique; Lanza, Mario
err分享
err收藏
SPICE Implementation of the Dynamic Memdiode Model for Bipolar Resistive Switching Devices
errMICROMACHINES
IF3
err2022-02-19
err34
errOAAI
errLeonel Aguirre, Fernando; Sune, Jordi; Miranda, Enrique
err分享
err收藏
Standards for the Characterization of Endurance in Resistive Switching Devices
errACS NANO
IF16
err2021-11-03
err155
errOAAI
errLanza, Mario; Waser, Rainer; Ielmini, Daniele; Yang, J. Joshua; Goux, Ludovic; Sune, Jordi; Kenyon, Anthony Joseph; Mehonic, Adnan; Spiga, Sabina; Rana, Vikas; Wiefels, Stefan; Menzel, Stephan; Valov, Ilia; Villena, Marco A.; Miranda, Enrique; Jing, Xu; Campabadal, Francesca; Gonzalez, Mireia B.; Aguirre, Fernando; Palumbo, Felix; Zhu, Kaichen; Roldan, Juan Bautista; Puglisi, Francesco Maria; Larcher, Luca; Hou, Tuo-Hung; Prodromakis, Themis; Yang, Yuchao; Huang, Peng; Wan, Tianqing; Chai, Yang; Pey, Kin Leong; Raghavan, Nagarajan; Duenas, Salvador; Wang, Tao; Xia, Qiangfei; Pazos, Sebastian
err分享
err收藏

研究方向

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