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Oleg Kononchuk

communaute universite grenoble alpes

15H指数
105论文数
640被引数
收录论文 18
发表时间
Relation Between Interface Defects and Bonding Void Sizes界面缺陷与键合空隙尺寸之间的关系
err2026-02-01
err0
PREAI
errRieutord, F.; Radisson, D.; Landru, D.; Kononchuk, O.; Badey, N.; Colonel, L.; Fournel, F.; Larrey, V.
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High temperature evolution of interfacial metal film bonding two 4H-SiC substrates
err2025-02-01
err0
errOAAI
errLe Cunff, Maelle; Rieutord, Francois; Landru, Didier; Kononchuk, Oleg; Cherkashin, Nikolay
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Reconstruction of depth resolved strain tensor in off-axis single crystals: Application to H+ ions implanted LiTaO3
err2021-02-26
err4
errOAAI
errLouiset, Antonin; Schamm-Chardon, Sylvie; Kononchuk, Oleg; Cherkashin, Nikolay
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Fracture Wake Patterns in Brittle Solids
err2021-02-26
err4
PREAI
errLandru, Didier; Massy, Damien; Mohamed, Nadia Ben; Kononchuk, Oleg; Mazen, Frederic; Tardif, Samuel; Rieutord, Francois
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Kinetics and coupled dynamics of dewetting and chemical reaction in Si/SiO2/Si system
err2020-09-02
err2
errOAAI
errLeroy, F.; Landru, D.; Cheynis, F.; Kononchuk, O.; Mueller, P.; Curiotto, S.
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Metallic impurity gettering and secondary defect formation in megaelectron volt self-implanted Czochralski and float-zone silicon
err2019-12-06
err19
errOAAI
errBrown, RA; Kononchuk, O; Bondarenko, I; Romanowski, A; Radzimski, Z; Rozgonyi, GA; Gonzalez, F
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Lateral gettering of Fe on bulk and silicon-on-insulator wafers
err2019-12-06
err5
PREAI
errBeaman, KL; Kononchuk, O; Koveshnikov, S; Osburn, CM; Rozgonyi, GA
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Interface water diffusion in silicon direct bonding
err2016-09-14
err18
PREAI
errTedjini, M.; Fournel, F.; Moriceau, H.; Larrey, V.; Landru, D.; Kononchuk, O.; Tardif, S.; Rieutord, F.
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Edge Water Penetration in Direct Bonding Interface
err2016-08-24
err1
PREAI
errRieutord, F.; Tardif, S.; Landru, D.; Kononchuk, O.; Larrey, V.; Moriceau, H.; Tedjini, M.; Fournel, F.
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Fracture dynamics in implanted silicon
err2015-09-02
err8
PREAI
errMassy, D.; Mazen, F.; Tardif, S.; Penot, J. D.; Ragani, J.; Madeira, F.; Landru, D.; Kononchuk, O.; Rieutord, F.
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Confinement of vacancies during annealing of H implanted GaN sandwiched between two {InGaN/GaN} superlattices
err2012-07-09
err1
errOAAI
errCherkashin, N.; Claverie, A.; Sotta, D.; Bethoux, J. -M.; Capello, L.; Kononchuk, O.
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Evolution of deep-level centers in p-type silicon following ion implantation at 85 K
err1999-03-01
err8
PREAI
errCho, CR; Yarykin, N; Brown, RA; Kononchuk, O; Rozgonyi, GA; Zuhr, RA
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Diffusion of iron in the silicon dioxide layer of silicon-on-insulator structures
err1998-08-31
err39
PREAI
errKononchuk, O; Korablev, KG; Yarykin, N; Rozgonyi, GA
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Gettering of iron in silicon-on-insulator wafers
err1997-08-25
err14
PREAI
errBeaman, KL; Agarwal, A; Kononchuk, O; Koveshnikov, S; Bondarenko, I; Rozgonyi, GA
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Gettering of Fe to below 10(10) cm(-3) in MeV self-implanted Czochralski and float zone silicon
err1996-12-30
err26
PREAI
errKononchuk, O; Brown, RA; Radzimski, Z; Rozgonyi, GA; Gonzalez, F
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