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O
Oleg Kononchuk
communaute universite grenoble alpes
15
H指数
105
论文数
640
被引数
0
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18
发表时间
发表时间
IF
被引数
Relation Between Interface Defects and Bonding Void Sizes
界面缺陷与键合空隙尺寸之间的关系
ECS Journal of Solid State Science and Technology
IF
2.2
2026-02-01
0
PRE
AI
Rieutord, F.; Radisson, D.; Landru, D.; Kononchuk, O.; Badey, N.; Colonel, L.; Fournel, F.; Larrey, V.
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High temperature evolution of interfacial metal film bonding two 4H-SiC substrates
APPLIED SURFACE SCIENCE
IF
6.9
2025-02-01
0
OA
AI
Le Cunff, Maelle; Rieutord, Francois; Landru, Didier; Kononchuk, Oleg; Cherkashin, Nikolay
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Three-dimensional X-FEM modeling of crack coalescence phenomena in the Smart Cut™ technology
FINITE ELEMENTS IN ANALYSIS AND DESIGN
IF
3.5
2023-01-01
1
OA
AI
Pali, E.; Gravouil, A.; Tanguy, A.; Landru, D.; Kononchuk, O.
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Reconstruction of depth resolved strain tensor in off-axis single crystals: Application to H+ ions implanted LiTaO3
APPLIED PHYSICS LETTERS
IF
3.6
2021-02-26
4
OA
AI
Louiset, Antonin; Schamm-Chardon, Sylvie; Kononchuk, Oleg; Cherkashin, Nikolay
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Fracture Wake Patterns in Brittle Solids
PHYSICAL REVIEW APPLIED
IF
4.4
2021-02-26
4
PRE
AI
Landru, Didier; Massy, Damien; Mohamed, Nadia Ben; Kononchuk, Oleg; Mazen, Frederic; Tardif, Samuel; Rieutord, Francois
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Kinetics and coupled dynamics of dewetting and chemical reaction in Si/SiO2/Si system
JOURNAL OF MATERIALS SCIENCE
IF
3.9
2020-09-02
2
OA
AI
Leroy, F.; Landru, D.; Cheynis, F.; Kononchuk, O.; Mueller, P.; Curiotto, S.
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Metallic impurity gettering and secondary defect formation in megaelectron volt self-implanted Czochralski and float-zone silicon
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF
3.3
2019-12-06
19
OA
AI
Brown, RA; Kononchuk, O; Bondarenko, I; Romanowski, A; Radzimski, Z; Rozgonyi, GA; Gonzalez, F
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Lateral gettering of Fe on bulk and silicon-on-insulator wafers
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
IF
3.3
2019-12-06
5
PRE
AI
Beaman, KL; Kononchuk, O; Koveshnikov, S; Osburn, CM; Rozgonyi, GA
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Interface water diffusion in silicon direct bonding
APPLIED PHYSICS LETTERS
IF
3.6
2016-09-14
18
PRE
AI
Tedjini, M.; Fournel, F.; Moriceau, H.; Larrey, V.; Landru, D.; Kononchuk, O.; Tardif, S.; Rieutord, F.
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Edge Water Penetration in Direct Bonding Interface
SEMICONDUCTOR WAFER BONDING: SCIENCE, TECHNOLOGY AND APPLICATIONS 14
IF
0
2016-08-24
1
PRE
AI
Rieutord, F.; Tardif, S.; Landru, D.; Kononchuk, O.; Larrey, V.; Moriceau, H.; Tedjini, M.; Fournel, F.
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Fracture dynamics in implanted silicon
APPLIED PHYSICS LETTERS
IF
3.6
2015-09-02
8
PRE
AI
Massy, D.; Mazen, F.; Tardif, S.; Penot, J. D.; Ragani, J.; Madeira, F.; Landru, D.; Kononchuk, O.; Rieutord, F.
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Confinement of vacancies during annealing of H implanted GaN sandwiched between two {InGaN/GaN} superlattices
APPLIED PHYSICS LETTERS
IF
3.6
2012-07-09
1
OA
AI
Cherkashin, N.; Claverie, A.; Sotta, D.; Bethoux, J. -M.; Capello, L.; Kononchuk, O.
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Application of the O-lattice theory for the reconstruction of the high-angle near 90° tilt Si(110)/(001) boundary created by wafer bonding
ACTA MATERIALIA
IF
9.3
2012-02-01
7
PRE
AI
Cherkashin, N.; Kononchuk, O.; Reboh, S.; Hytch, M.
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Evolution of deep-level centers in p-type silicon following ion implantation at 85 K
APPLIED PHYSICS LETTERS
IF
3.6
1999-03-01
8
PRE
AI
Cho, CR; Yarykin, N; Brown, RA; Kononchuk, O; Rozgonyi, GA; Zuhr, RA
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Gettering of Cu and Ni in mega-electron-volt ion-implanted epitaxial silicon
APPLIED PHYSICS LETTERS
IF
3.6
1998-10-19
31
PRE
AI
Koveshnikov, S; Kononchuk, O
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Diffusion of iron in the silicon dioxide layer of silicon-on-insulator structures
APPLIED PHYSICS LETTERS
IF
3.6
1998-08-31
39
PRE
AI
Kononchuk, O; Korablev, KG; Yarykin, N; Rozgonyi, GA
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Gettering of iron in silicon-on-insulator wafers
APPLIED PHYSICS LETTERS
IF
3.6
1997-08-25
14
PRE
AI
Beaman, KL; Agarwal, A; Kononchuk, O; Koveshnikov, S; Bondarenko, I; Rozgonyi, GA
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Gettering of Fe to below 10(10) cm(-3) in MeV self-implanted Czochralski and float zone silicon
APPLIED PHYSICS LETTERS
IF
3.6
1996-12-30
26
PRE
AI
Kononchuk, O; Brown, RA; Radzimski, Z; Rozgonyi, GA; Gonzalez, F
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R
Richard A. Brown
H 指数: 75 · 论文数: 448
A
A. Claverie
H 指数: 48 · 论文数: 479
M
Martin Hÿtch
H 指数: 38 · 论文数: 254
A
Anthony Gravouil
H 指数: 38 · 论文数: 316
G
G. A. Rozgonyi
H 指数: 36 · 论文数: 333
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