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H

Hyojun Choi

korea advanced institute of science & technology (kaist)

H指数:3

被引数:31

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Band Engineering of Gate Interlayer for Low-Voltage Operation and Enhanced Reliability in Gate-Injection Type FeFETs

栅注入型FeFETs中栅极层间带工程用于低压操作和可靠性增强

IEEE Electron Device Letters

IF4.5

2026-04-010

PRE

A Novel Ferroelectric NAND Cell Structure Featuring Ultrathin IGZO Charge Trap Layer for Superior Endurance and Retention

新型铁电NAND单元结构，具有超薄IGZO电荷捕获层，以实现卓越的耐久性和保持性

IEEE Transactions on Electron Devices

IF3.2

2026-02-110

PRE

OmEGa(Ω): Ontology-based information extraction framework for constructing task-centric knowledge graph from manufacturing documents with large language model

OmEGa(Ω): 基于本体的信息抽取框架，用于从大型语言模型的制造文档中构建以任务为中心的知识图

ADVANCED ENGINEERING INFORMATICS

IF9.9

2025-03-010

PRE

Investigation on Quality Prediction Algorithm in Ultrasonic Metal Welding for Multilayered Cu for Battery Cells

电池用多层Cu超声波金属焊接质量预测算法研究

IF3.6

2023-01-010

OA