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G

Giuk Kim

korea advanced institute of science & technology (kaist)

H指数:12

被引数:404

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Soft detrap scheme for suppressing read-after-write-delay in 3D ferroelectric NAND arrays

用于抑制3D铁电NAND阵列中写后读延迟的软陷阱方案

Microelectronic Engineering

IF3.1

2026-05-230

PRE

Band Engineering of Gate Interlayer for Low-Voltage Operation and Enhanced Reliability in Gate-Injection Type FeFETs

栅注入型FeFETs中栅极层间带工程用于低压操作和可靠性增强

IEEE Electron Device Letters

IF4.5

2026-04-010

PRE

A Novel Ferroelectric NAND Cell Structure Featuring Ultrathin IGZO Charge Trap Layer for Superior Endurance and Retention

新型铁电NAND单元结构，具有超薄IGZO电荷捕获层，以实现卓越的耐久性和保持性

IEEE Transactions on Electron Devices

IF3.2

2026-02-110

PRE

Stabilized Negative Capacitance for Near-Theoretical Efficiency and High Reliability in Charge Trap Flash Memory

稳定化负电容效应用于实现近理论效率和高可靠性在电荷俘获闪存中

Materials Today Physics

IF9.7

2025-09-190

PRE

Middle Interlayer Engineered Ferroelectric NAND Flash Overcoming Reliability and Stability Bottlenecks for Next-Generation High-Density Storage Systems

中间层工程化铁电NAND闪存：克服下一代高密度存储系统中的可靠性与稳定性瓶颈

Advanced Science

IF14.1

2025-08-230

OAAI

Enhancing Program Speed and Diminishing Read After Write Delay by Metal Work Function Engineering

通过金属功函数工程提升程序速度并减小写后读延迟

IEEE Electron Device Letters

IF4.5

2025-08-010

PRE

High Pressure Microwave Annealing Effect on Electrical Properties of Hf x Zr1-x O Films near Morphotropic Phase Boundary

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2023-08-286

PRE

A method of controlling the imprint effect in hafnia ferroelectric device

APPLIED PHYSICS LETTERS

IF3.6

2023-01-0912

PRE

Power-Delay Area-Efficient Processing-In-Memory Based on Nanocrystalline Hafnia Ferroelectric Field-Effect Transistors

基于纳米晶Hafnia铁电场效应晶体管的功率延迟面积高效的内存处理

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2022-12-2813

PRE

The Opportunity of Negative Capacitance Behavior in Flash Memory for High-Density and Energy-Efficient In-Memory Computing Applications

ADVANCED FUNCTIONAL MATERIALS

IF19

2022-12-077

PRE

Steep-Slope Transistor with an Imprinted Antiferroelectric Film

带有压印反铁电薄膜的陡坡晶体管

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2022-11-174

PRE

Novel Approach to High κ (∼59) and Low EOT (∼3.8 Å) near the Morphotrophic Phase Boundary with AFE/FE (ZrO2/HZO) Bilayer Heterostructures and High-Pressure Annealing

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2022-09-1524

PRE

High performance ferroelectric field-effect transistors for large memory-window, high-reliability, high-speed 3D vertical NAND flash memory

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2022-01-0123

PRE

Experimental Analysis and Mathematical Modeling of Program Efficiency in Gate-Side Injection Type FeFETs Depending on the Gate Interlayer

基于栅极侧注入型FeFETs中栅极中间层依赖的程序效率的实验分析与数学建模

IEEE Transactions on Electron Devices

IF3.2

0

PRE

Low-Temperature (450 ^∘C) Crystallization of Al:HfO₂ Ferroelectric Thin Films Enabled by Microwave Annealing Process

低温度(450 ^∘C)下通过微波退火工艺实现的Al:HfO<sub>2</sub>铁电薄膜结晶

IEEE Transactions on Electron Devices

IF3.2

0

PRE