Jie Wei - Publications, H-index & Citations

Jie Wei

university of electronic science & technology of china

21H指数

124论文数

1.2K被引数

收录论文 26

发表时间

An RC-Biased ESD Protection Clamp for GaN HEMT RC偏置的GaN HEMT ESD保护钳位电路

IEEE Transactions on Electron Devices

IF3.2

2025-12-01

PREAI

Zhang, Pengfei; Bi, Xihao; Deng, Gaoqiang; Yang, Cheng; Wei, Yuxi; Zhao, Zhijia; Wei, Jie; Luo, Xiaorong

Influence of Interfacial Stress on the Structural Characteristics and Hydrogen Sensing Performance of WO3 Films 界面应力对WO3薄膜结构特性及氢气传感性能的影响

Nanomaterials 2025, Vol. 15, Page 1785

IF4.3

2025-11-27

OAAI

Zhihong Qiao; Jianmin Ye; Wen Ye; Jie Wei; Ying Li; Zhe Lv; Meng Zhao

Analytical models of 3D electric field and specific ON-resistance for a novel split-gate trench VDMOS

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

IF2.1

2025-10-31

PREAI

Deng, Gaoqiang; Li, Jianghuan; Liu, Renkuan; Dong, Zhuoling; Yang, Tao; Ye, Song; Ye, Jun; Ma, Wenying; Wei, Jie; Zhang, Bo; Luo, Xiaorong

Variable Fluoride Ion Implantation Compound Termination in β-Ga₂O₃ Schottky Barrier Diode With Stress Test 变剂量氟离子注入复合终止在β-Ga₂O₃肖特基势垒二极管中的应力测试

IEEE Transactions on Electron Devices

IF3.2

2025-10-06

PREAI

Yuxi Wei; Yuxin Wu; Linyao Hao; Kai Zhao; Chaoyu Gong; Gaoqiang Deng; Kaiwei Dai; Jie Wei; Xiaorong Zhang; Xiaorong Luo

An integrated GaN PNP Bipolar Junction Transistor for ESD applications 一种用于ESD应用的集成GaN PNP双极结型晶体管

MICROELECTRONICS JOURNAL

IF2.3

2025-10-01

PREAI

Zhang, Pengfei; Zhao, Zhijia; Deng, Gaoqiang; Luo, Xiaorong; Sun, Shuxiang; Wei, Yuxi; Wei, Jie

Novel Bidirectional ESD Circuit for GaN HEMT

MICROMACHINES

IF3

2025-01-23

OAAI

Zhang, Pengfei; Yang, Cheng; Shen, Jingyu; Luo, Xiaorong; Deng, Gaoqiang; Sun, Shuxiang; Wei, Yuxi; Wei, Jie

A scientometric study on research characteristics and trends of amyloidosis involving the oral cavity

JOURNAL OF DENTAL SCIENCES

IF3.1

2024-12-01

OAAI

Liu, Wei; Jiang, Cheng; Shen, Xuemin; Wu, Yunteng; Wei, Jie

Improving Short-Circuit Withstand Capability by Targeted Optimization Package for Press-Pack IGBT Module

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2024-10-01

PREAI

Liu, Renkuan; Li, Hui; Luo, Xiaorong; Yao, Ran; Lai, Wei; Wei, Jie; Wang, Xiao; Li, Zhaoji; Zhang, Bo; Chen, Xianping

Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer 具有p-gan掩埋层和局部掺杂势垒层的新型AlGaN/GaN高电子迁移率晶体管的单事件瞬态效应的改善

MICROMACHINES

IF3

2024-09-16

OAAI

Xiong, Juan; Xie, Xintong; Wei, Jie; Sun, Shuxiang; Luo, Xiaorong

Improvement of single event transients effect for a novel AlGaN/GaN HEMT with enhanced breakdown voltage 提高击穿电压的新型AlGaN/GaN HEMT单事件瞬态效应的改善

JOURNAL OF SCIENCE-ADVANCED MATERIALS AND DEVICES

IF6.8

2024-06-01

OAAI

Sun, Shuxiang; Xie, Xintong; Zhang, Pengfei; Zhao, Zhijia; Wei, Jie; Luo, Xiaorong

Low turn-on voltage and 2.3 kV β-Ga2O3 heterojunction barrier Schottky diodes with Mo anode 具有Mo阳极的低导通电压和2.3 kV β-Ga2O3异质结势垒肖特基二极管

APPLIED PHYSICS LETTERS

IF3.6

2024-04-24

PREAI

Su, Chunxu; Zhou, Hong; Zhang, Kun; Wang, Chenlu; Sun, Sihan; Gong, Hehe; Ye, Jiandong; Liu, Zhihong; Dang, Kui; Hu, Zheyuan; Zhang, Xiaodong; Wei, Jie; Luo, Xiaorong; Zhang, Jincheng; Zhang, Rong; Hao, Yue

Vertical GaN Power MOSFET with Integrated Fin-Shaped Diode for Reverse Conduction

NANOSCALE RESEARCH LETTERS

IF4.1

2022-08-24

OAAI

Sun, Tao; Luo, Xiaorong; Wei, Jie; Yang, Kemeng; Deng, Siyu; Zhao, Zhijia; Jia, Yanjiang; Zhang, Bo

High Performance Flip-Structure Enhancement-Mode HEMT with Face-to-Face Double Gates 具有面对面双栅极的高性能倒装结构增强模式HEMT

NANOSCALE RESEARCH LETTERS

IF4.1

2022-08-11

OAAI

Deng, Siyu; Wei, Jie; Zhang, Cheng; Liao, Dezun; Sun, Tao; Yang, Kemeng; Xi, Lufan; Zhang, Bo; Luo, Xiaorong

Snapback-Free Reverse-Conducting SOI LIGBT with an Integrated Self-Biased MOSFET

NANOSCALE RESEARCH LETTERS

IF4.1

2022-04-18

OAAI

Yang, Kemeng; Wei, Jie; Dai, Kaiwei; Ma, Zhen; Li, Congcong; Luo, Xiaorong

Hysteresis-free and μs-switching of D/E-modes Ga2O3 hetero-junction FETs with the BV2/Ron,sp of 0.74/0.28 GW/cm2

APPLIED PHYSICS LETTERS

IF3.6

2022-03-14

PREAI

Wang, Chenlu; Zhou, Hong; Zhang, Jincheng; Mu, Wenxiang; Wei, Jie; Jia, Zhitai; Zheng, Xuefeng; Luo, Xiaorong; Tao, Xutang; Hao, Yue

Experimental Study on Static and Dynamic Characteristics of Ga2O3 Schottky Barrier Diodes With Compound Termination

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2021-10-01

PREAI

Wei, Yuxi; Luo, Xiaorong; Wang, Yuangang; Lu, Juan; Jiang, Zhuolin; Wei, Jie; Lv, Yuanjie; Feng, Zhihong

Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction

NANOSCALE RESEARCH LETTERS

IF4.1

2020-07-16

OAAI

Sun, Tao; Luo, Xiaorong; Wei, Jie; Yang, Chao; Zhang, Bo

High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer SiNx钝化层氟离子注入高击穿电压低动态导通电阻AlGaN/GaN HEMT

NANOSCALE RESEARCH LETTERS

IF4.1

2019-06-04

OAAI

Yang, Chao; Luo, Xiaorong; Sun, Tao; Zhang, Anbang; Ouyang, Dongfa; Deng, Siyu; Wei, Jie; Zhang, Bo

High performance enhancement-mode HEMT with 3DEG to conduct current and 3DHG as back barrier

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2019-06-01

PREAI

Deng, Siyu; Wei, Jie; Ouyang, Dongfa; Zhang, Bo; Yang, Chao; Luo, Xiaorong

Simulation of a high-performance enhancement-mode HFET with back-to-back graded AlGaN layers

SCIENCE CHINA-INFORMATION SCIENCES

IF7.6

2019-01-16

PREAI

Peng, Fu; Yang, Chao; Deng, Siyu; Ouyang, Dongya; Zhang, Bo; Wei, Jie; Luo, Xiaorong

研究方向