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J

J. D. Blevins

United States Department of Defense

14H指数
24论文数
1.1K被引数
收录论文 5
发表时间
Structural stability of β-Ga2O3 under ion irradiation
err2022-10-26
err14
errOAAI
errPetkov, Alexander; Cherns, David; Chen, Wei-Ying; Liu, Junliang; Blevins, John; Gambin, Vincent; Li, Meimei; Liu, Dong; Kuball, Martin
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β-Gallium oxide power electronicsΒ-氧化镓电力电子
err2022-02-07
err322
errOAAI
errGreen, Andrew J.; Speck, James; Xing, Grace; Moens, Peter; Allerstam, Fredrik; Gumaelius, Krister; Neyer, Thomas; Arias-Purdue, Andrea; Mehrotra, Vivek; Kuramata, Akito; Sasaki, Kohei; Watanabe, Shinya; Koshi, Kimiyoshi; Blevins, John; Bierwagen, Oliver; Krishnamoorthy, Sriram; Leedy, Kevin; Arehart, Aaron R.; Neal, Adam T.; Mou, Shin; Ringel, Steven A.; Kumar, Avinash; Sharma, Ankit; Ghosh, Krishnendu; Singisetti, Uttam; Li, Wenshen; Chabak, Kelson; Liddy, Kyle; Islam, Ahmad; Rajan, Siddharth; Graham, Samuel; Choi, Sukwon; Cheng, Zhe; Higashiwaki, Masataka
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Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges
err2013-11-04
err23
PREAI
errKillat, N.; Montes Bajo, M.; Paskova, T.; Evans, K. R.; Leach, J.; Li, X.; Ozgur, U.; Morkoc, H.; Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D.; Kuball, M.
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Simulation based considerations in placement of capacitors near a dynamic voltage restorer
err2008-10-01
err1
PREAI
errSuryanarayanan, S.; Heydt, G. T.; Ayyanar, R.; Blevins, J. D.; Anderson, S. W.
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The design of power acceptability curves
err2002-07-01
err43
PREAI
errKyei, J; Ayyanar, R; Heydt, G; Thallam, R; Blevins, J
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