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L

Lutz Kirste

Fraunhofer Institute for Applied Solid State Physics

36H指数
288论文数
4.6K被引数
收录论文 66
发表时间
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Boron Incorporation Efficiency in Diamond: Influence of Gas Composition, Crystal Orientation, and Substrate Temperature金刚石中硼的掺杂效率：气体组成、晶体取向和衬底温度的影响
errC-Journal of Carbon Research
IF2.9
err2026-09-01
err0
errOAAI
errVincent Mortet; Mahebub Alam; Patrik Straňák; Kildong Sung; Yan Busby; Lutz Kirste; Wolfgang Klesse
err分享
err收藏
Strain-driven amorphization in Al1-xYxN thin films and lattice-engineering stabilization illustrated by In1-xYxN应变驱动的Al₁₋ₓYₓN薄膜中的非晶化及由In₁₋ₓYₓN例证的晶格工程稳定化
errJournal of Applied Physics
IF2.5
err2026-05-14
err0
PREAI
errAfshar, N.; Wolff, N.; Horich, F.; Stranak, P.; Kirste, L.; Kienle, L.; Dadgar, A.; Ambacher, O.
err分享
err收藏
Aluminum gallium nitride grown by halide vapor phase epitaxy: growth on misoriented gallium nitride substrates卤化物气相外延生长的铝镓氮化物：在偏离取向的氮化镓衬底上的生长
errApplied Surface Science
IF6.9
err2026-03-31
err0
PREAI
errArianna Jaroszynska; Petro Sadovy; Lutz Kirste; Karol Pozyczka; Robert Kucharski; Michal Bockowski; Tomasz Sochacki
err分享
err收藏
GaSb-based 2062 nm single-frequency VECSEL with 3.2 W output powerGaSb基2062 nm单频VECSEL，输出功率3.2 W
errjournal of physics: photonics
IF0
err2026-03-23
err0
errOAAI
errSteffen Adler; Peter Holl; Elke Diwo-Emmer; Lutz Kirste; Marcel Rattunde
err分享
err收藏
Diffusion of oxygen in aluminum nitride氮化铝中的氧扩散
errJournal of Applied Physics
IF2.5
err2026-03-14
err0
PREAI
errTroger-Neuhaus, Jan; Schulz, Tobias; Hartmann, Carsten; Remmele, Thilo; Hagedorn, Sylvia; Kirste, Lutz; Hagenhoff, Birgit; Bracht, Hartmut
err分享
err收藏
Investigation of Ti/Al/Ni/Au ohmic contacts for AlScN/GaN HEMTs研究Ti/Al/Ni/Au欧姆接触在AlScN/GaN HEMTs中的应用
errJournal of Applied Physics
IF2.5
err2026-03-07
err0
PREAI
errStreicher, Isabel; Milazzo, Simone; Stranak, Patrik; Kirste, Lutz; Duarte, Teresa; Di Franco, Salvatore; Votadoro, Valerio; Leone, Stefano; Greco, Giuseppe; Roccaforte, Fabrizio
err分享
err收藏
Chemical Vapor Deposition of Nitrides by Carbon-Free Brominated Precursors碳自由溴化前驱体制备氮化物的化学气相沉积
errPhysica Status Solidi A-Applications and Materials Science
IF1.9
err2026-02-24
err0
errOAAI
errLeone, Stefano; Duarte, Teresa; Menner, Hanspeter; Richter, Jannik; Kirste, Lutz; Maegdefessel, Sven; Hoffmann, Felix; So, Byeongchan; Quay, Ruediger
err分享
err收藏
On germanium doping of gallium nitride: Ion implantation vs in-situ doping during growth关于氮化镓中锗掺杂：生长过程中的离子注入与原位掺杂
errMaterials Science in Semiconductor Processing
IF4.6
err2026-02-19
err0
PREAI
errKacper Sierakowski; Leszek Konczewicz; Lutz Kirste; Karol Kawka; Pawel Kempisty; Krzysztof Gołyga; Auditee Majumder Momo; Robert Czernecki; Patrik Straňák; Marcin Turek; Tomasz Sochacki; Ramón Collazo; Zlatko Sitar; Michał Boćkowski
err分享
err收藏
Performance enhancement of AlGaN/GaN-based high electron mobility transistors with sputtered AlScN gate dielectric采用溅射AlScN栅介质的AlGaN/GaN基高电子迁移率晶体管的性能提升
errJournal of Applied Physics
IF2.5
err2026-02-14
err1
errOAAI
errYassine, A.; Driad, R.; Nair, A.; Ott, P.; Kirste, L.; Stranak, P.; Czap, H.; Mikulla, M.; Yassine, M.; Ambacher, O.
err分享
err收藏
Stress management of large size (001) and (111) diamond wafers for quantum-optical applications
errJournal of Physics D: Applied Physics
IF3.2
err2026-01-23
err0
errOAAI
errJan Engels; Jürgen Weippert; Jan Kustermann; Sven Mägdefessel; Niklas Mathes; Jan Jeske; Lutz Kirste; Peter Knittel; Patricia Klar; Tobias Fehrenbach; Christoph Wild; Vadim Lebedev
err分享
err收藏
Enhancing NV concentration in delta-doped diamond via low-pressure high-temperature annealing
errDiamond and Related Materials
IF5.1
err2026-01-16
err0
errOAAI
errPhilip Schätzle; Sven Mägdefessel; Leon Büttner; Patrik Straňák; Aurelién Commans; Lutz Kirste; Rebekka Eberle; Volker Cimalla; Peter Knittel
err分享
err收藏
AlScN/GaN Multichannel Heterostructures Grown by Metal–Organic Chemical Vapor DepositionAlScN/GaN多通道异质结构，通过金属有机化学气相沉积生长
errAdvanced Materials Interfaces
IF4.4
err2025-10-20
err0
errOAAI
errTeresa Duarte; Isabel Streicher; Patrik Straňák; Lutz Kirste; Mario Prescher; Niklas Wolff; Susanne Beuer; Lorenz Kienle; Rüdiger Quay; Stefano Leone
err分享
err收藏
Wafer Scale N-Doped Diamond (111) with Mainly Nitrogen Spin Bath Limited Nitrogen Vacancy Coherence Times from Heteroepitexial Growth晶圆级N掺杂金刚石(111)（通过异质外延生长获得），其氮空位相干时间主要由氮自旋浴限制。
errPHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
IF2
err2025-10-01
err0
errOAAI
errWeippert, Jurgen; Engels, Jan; Kustermann, Jan; Fehrenbach, Tobias; Wild, Christoph; Klar, Patricia; Stranak, Patrik; Prescher, Mario; Kirste, Lutz; Magdefessel, Sven; Knittel, Peter; Lebedev, Vadim
err分享
err收藏
Thermal annealing effects on the electrical and structural properties of Mo Schottky contacts to n-type 4H-SiC热退火效应对n型4H-SiC上Mo肖特基接触的电学和结构性质的影响
errMaterials Science in Semiconductor Processing
IF4.6
err2025-06-19
err0
errOAAI
errM. Vivona; I. Streicher; L. Kirste; A.M. Mio; G. Nicotra; P. Fiorenza; F. Giannazzo; F. Roccaforte
err分享
err收藏
Development of Semi-Insulating gallium nitride layers on native substrates by magnesium ion implantation and Ultra-High-Pressure annealing通过镁离子注入和超高压退火在原生衬底上制备半绝缘氮化镓层
errAPPLIED SURFACE SCIENCE
IF6.9
err2025-06-04
err0
PREAI
errSochacki, Tomasz; Kirste, Lutz; Sierakowski, Kacper; Jaroszynska, Arianna; Jakiela, Rafal; Fijalkowski, Michal; Zajzc, Marcin; Koziorowska, Julita Smalc; Lachowski, Artur; Turek, Marcin; Stranak, Patrik; Sumida, Kensuke; Bockowski, Michal
err分享
err收藏
Electrical properties of SiN y /Al1-x Sc x N/GaN-based metal-insulator-semiconductor structuresSiNy/Al1-xScxN/GaN基金属-绝缘体-半导体结构的电学特性
errJOURNAL OF APPLIED PHYSICS
IF2.5
err2025-05-15
err0
errOAAI
errYassine, A.; Yassine, M.; Streicher, I.; Driad, R.; Kirste, L.; Stranak, P.; Doering, P.; Leone, S.; Ambacher, O.
err分享
err收藏
Bragg diffraction imaging characterization of crystal defects in GaN (0001) substrates: Comparison of the growth method and the seed approachGaN (0001) 衬底中晶体缺陷的Bragg衍射成像表征：生长方法和籽晶方法的比较
errProgress in Crystal Growth and Characterization of Materials
IF1.9
err2025-05-08
err0
PREAI
errLutz Kirste; Thu Nhi Tran-Caliste; Tomasz Sochacki; Jan L. Weyher; Patrik Straňák; Robert Kucharski; Karolina Grabianska; José Baruchel; Michal Bockowski
err分享
err收藏
Oxygen Doping in Ferroelectric Wurtzite-type Al0.73Sc0.27N: Improved Leakage and Polarity Control铁电六方纤锌矿结构Al0.73Sc0.27N中的氧掺杂：泄漏特性和极性控制的改善
errADVANCED ELECTRONIC MATERIALS
IF5.3
err2025-03-18
err0
errOAAI
errIslam, MR; Wolff, N; Schönweger, G; Kreutzer, TN; Brown, M; Gremmel, M; Ollanescu-Orendi, ES; Stranák, P; Kirste, L; Brennecka, GL; Fichtner, S; Kienle, L
err分享
err收藏
Structural and electrical properties of fiber textured and epitaxial molybdenum thin films prepared by magnetron sputter epitaxy磁控溅射外延制备的纤维织构和外延钼薄膜的结构和电学性能
errAPPLIED PHYSICS LETTERS
IF3.6
err2025-01-02
err0
errOAAI
errSundarapandian, Balasubramanian; Raghuwanshi, Mohit; Stranak, Patrik; Yu, Yuan; Lyu, Haiyan; Prescher, Mario; Kirste, Lutz; Ambacher, Oliver
err分享
err收藏
Sputtered aluminum nitride waveguides for the telecommunication spectrum with less than 0.16 dB/cm propagation loss
errOPTICS EXPRESS
IF3.3
err2024-12-09
err0
errOAAI
errSingh, Radhakant; Raghuwanshi, Mohit; Sundarapandian, Balasubramanian; Thomas, Rijil; Kirste, Lutz; Suckow, Stephan; Lemme, Max c.
err分享
err收藏

研究方向

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