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收藏900-V active-passivation p-GaN gate HEMT with suppressed floating Si substrate induced back-gating effect
Chang, Hao; Yang, Junjie; Yu, Jingjing; Cui, Jiawei; Yin, Youyi; Yang, Xuelin; Liu, Xiaosen; Wang, Maojun; Shen, Bo; Wei, Jin
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