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J

Jin Wei

Peking University

40H指数
249论文数
5.5K被引数
收录论文 38
发表时间
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Corni Fructus polysaccharide alleviates chronic unpredictable mild stress-induced depressive-like behaviors associated with modulating gut microbiota, neuroinflammation and oxidative stressCorni Fructus多糖通过调节肠道菌群、神经炎症和氧化应激，缓解慢性不可预测性轻度应激诱导的抑郁样行为
errInternational Journal of Biological Macromolecules
IF8.5
err2026-09-02
err0
PREAI
errHeping Hui; Yajing Li; Lin Chen; Jin Wei; Tong Zhao; Yalong Feng; Xiaodong Li; Yilin Zhang; Xuhua Liang
err分享
err收藏
GaN-on-Si JBS Diode Using Drive-In Diffusion to Shield p-GaN Regrowth Interface and Achieving a Breakdown Voltage Beyond 1 kV采用驱动扩散屏蔽p-GaN再生长界面并实现超过1 kV击穿电压的Si上GaN JBS二极管
errIEEE Electron Device Letters
IF4.5
err2026-09-01
err0
PREAI
errLiu, Sihang; Fu, Xingyu; Yang, Junjie; Cui, Jiawei; Chen, Zhenghao; Yang, Han; Li, Teng; Huang, Yuqi; Wang, Maojun; Shen, Bo; Yang, Xuelin; Wei, Jin
err分享
err收藏
Revisiting the 1-D Theoretical Limit of Wide Bandgap Semiconductor Power Devices via Variational Calculus通过变分法重新审视宽禁带半导体功率器件的一维理论极限
errIEEE Electron Device Letters
IF4.5
err2026-08-27
err0
PREAI
errBo Li; Maojun Wang; Jin Wei; Bo Shen
err分享
err收藏
Monolithically integrating polarization-doped InGaN p-FET and GaN n-FET for complementary logic circuitry将极化掺杂InGaN p-FET与GaN n-FET单片集成用于互补逻辑电路
errScience Advances
IF12.5
err2026-08-07
err0
errOAAI
errJingjing Yu; Teng Li; Yunhong Lao; Junjie Yang; Jiawei Cui; Sihang Liu; Han Yang; Youyi Yin; Maojun Wang; Xuelin Yang; Kevin J. Chen; Bo Shen; Jin Wei
err分享
err收藏
Semiconducting p-GaN gate HEMT with avalanche-like non-destructive breakdown capability半导体p-GaN栅极HEMT，具有类雪崩非破坏性击穿能力
errJournal of Applied Physics
IF2.5
err2026-05-28
err1
PREAI
errYu, Jingjing; Yang, Junjie; Zheng, Qian; Liu, Sihang; Wang, Maojun; Yang, Xuelin; Shen, Bo; Wei, Jin
err分享
err收藏
A Semi-Floating Gate GaN Memory Cell半浮栅GaN存储单元
errIEEE Electron Device Letters
IF4.5
err2026-04-28
err0
PREAI
errYouyi Yin; Teng Li; Yunhong Lao; Junjie Yang; Hao Chang; Han Yang; Xuelin Yang; Maojun Wang; Yimao Cai; Bo Shen; Jin Wei
err分享
err收藏
10000-Cycle/10-μs Short Circuit Operation in 650-V E-Mode p-GaN Gate HEMT With Schottky Source Extension10000-周期/10-μs短路操作在650-V E-Mode p-GaN栅高电子迁移率晶体管（HEMT）中的应用，该晶体管带有肖特基源扩展。
errIEEE Transactions on Electron Devices
IF3.2
err2026-02-03
err0
PREAI
errYunhong Lao; Jingjing Yu; Qian Zheng; Junjie Yang; Youyi Yin; Teng Li; Qimeng Jiang; Gaofei Tang; Maojun Wang; Jin Wei
err分享
err收藏
Dynamic instabilities in GaN power devices: mechanisms, challenges and advancementsGaN功率器件中的动态不稳定性：机理、挑战与进展
errJapanese Journal of Applied Physics
IF1.8
err2026-01-30
err0
PREAI
errYang, Junjie; Cui, Jiawei; Wu, Yanlin; Yu, Jingjing; Li, Teng; Nuo, Muqin; Wei, Jin
err分享
err收藏
Body Diode Induced Negative-Bias Vth Instability of Synchronous SiC MOSFET in Bridge-Leg Circuit体二极管引起的同步SiC MOSFET在桥臂电路中的负偏置Vth不稳定性
errIEEE Transactions on Power Electronics
IF6.5
err2026-01-19
err0
PREAI
errPeixuan Wang; Yunhong Lao; Youyi Yin; Meng Zhang; Michael Lee; Jack Chen; Tony Chau; Jin Wei
err分享
err收藏
Miller-Current Suppressing Technology for False Turn-On Protection of Commercial p-GaN HEMTs商业p-GaN HEMTs假开启保护的Miller电流抑制技术
errIEEE Journal of the Electron Devices Society
IF2.4
err2026-01-01
err0
PREAI
errLiu, Ziheng; He, Jiayin; Peng, Hongjie; Gao, Ju; Xia, Wenbo; Ao, Chengkang; Wang, Jinyan; Wang, Maojun; Wei, Jin; Xie, Yong
err分享
err收藏
7 kV/16.5 mΩcm2 E-mode active-passivation p-GaN gate HEMT exceeding SiC unipolar limit7 kV/16.5 mΩcm² E-mode活性-钝化p-GaN栅极HEMT超越SiC单极性极限
errSEMICONDUCTOR SCIENCE AND TECHNOLOGY
IF2.1
err2025-11-30
err0
PREAI
errLiu, Sihang; Cui, Jiawei; Yang, Junjie; Liu, Hongru; Li, Teng; Yu, Jingjing; Lao, Yunhong; Qi, Hengyuan; Duan, Jialin; Wang, Maojun; Liu, Xiaosen; Wei, Jin
err分享
err收藏
Impact of Extrinsic Resistance on Current Density of E-Mode GaN p-FETs: TCAD Study and Experimental Validation外因电阻对E-模式GaN p-FETs电流密度的影响：TCAD研究与实验验证
errIEEE Transactions on Electron Devices
IF3.2
err2025-10-06
err0
PREAI
errJialin Duan; Teng Li; Jingjing Yu; Hengyuan Qi; Yingming Song; Yunhong Lao; Junjie Yang; Youyi Yin; Xuelin Yang; Maojun Wang; Bo Shen; Jinyan Wang; Jin Wei
err分享
err收藏
Demonstration of One Transistor-One Diode (1T1D) p-GaN/AlGaN/GaN Memory Cell单晶体管-单二极管(1T1D) p-GaN/AlGaN/GaN存储单元的演示
errIEEE Electron Device Letters
IF4.5
err2025-08-01
err0
PREAI
errYouyi Yin; Teng Li; Junjie Yang; Jingjing Yu; Yunhong Lao; Hao Chang; Jialin Duan; Xiaosen Liu; Maojun Wang; Kechao Tang; Yimao Cai; Bo Shen; Jin Wei
err分享
err收藏
900-V active-passivation p-GaN gate HEMT with suppressed floating Si substrate induced back-gating effect
errAPPLIED PHYSICS LETTERS
IF3.6
err2025-04-21
err0
PREAI
errChang, Hao; Yang, Junjie; Yu, Jingjing; Cui, Jiawei; Yin, Youyi; Yang, Xuelin; Liu, Xiaosen; Wang, Maojun; Shen, Bo; Wei, Jin
err分享
err收藏
Detection of tetracycline by molecularly imprinted electrochemical sensor based on the modification of poly(3,4-propylene dioxythiophene)/ chitosan/au基于聚 (3，4-丙烯二氧噻吩)/壳聚糖/金修饰的分子印迹电化学传感器检测四环素
errINTERNATIONAL JOURNAL OF BIOLOGICAL MACROMOLECULES
IF8.5
err2024-11-01
err0
PREAI
errCheng, Qian; Abdiryim, Tursun; Jamal, Ruxangul; Liu, Xiong; Liu, Fangfei; Xue, Cong; Tang, Xinsheng; Chen, Jiaying; Wei, Jin
err分享
err收藏
GaN-on-sapphire JTE-anode lateral field-effect rectifier for improved breakdown voltage (>2.5 kV) and dynamic RON蓝宝石上GaN JTE阳极横向场效应整流器，可提高击穿电压 (>2.5 kV) 和动态RON
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-10-22
err0
PREAI
errCui, Jiawei; Yang, Junjie; Yu, Jingjing; Li, Teng; Yang, Han; Liu, Xiaosen; Wang, Jinyan; Wang, Maojun; Shen, Bo; Wei, Jin
err分享
err收藏
A novel molecularly imprinted electrochemical sensor from poly (3, 4-ethylenedioxythiophene)/chitosan for selective and sensitive detection of levofloxacin聚 (3，4-乙撑二氧噻吩)/壳聚糖分子印迹电化学传感器用于左氧氟沙星的选择性和灵敏检测
errINTERNATIONAL JOURNAL OF BIOLOGICAL MACROMOLECULES
IF8.5
err2024-05-01
err3
PREAI
errCheng, Qian; Abdiryim, Tursun; Jamal, Ruxangul; Liu, Xiong; Xue, Cong; Xie, Shuyue; Tang, Xinsheng; Wei, Jin
err分享
err收藏
Enhanced robustness against hot-electron-induced degradation in active-passivation p-GaN gate HEMT
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-03-04
err7
PREAI
errYang, Junjie; Wei, Jin; Wu, Yanlin; Yu, Jingjing; Cui, Jiawei; Yang, Xuelin; Liu, Xiaosen; Wang, Jinyan; Hao, Yilong; Wang, Maojun; Shen, Bo
err分享
err收藏
Analysis of Drain-Dependent Threshold Voltage and False Turn-On of Schottky-Type p-GaN Gate HEMT in Bridge-Leg Circuit桥臂电路中肖特基型p-gan栅HEMT漏极相关阈值电压和误导通分析
errIEEE TRANSACTIONS ON POWER ELECTRONICS
IF6.5
err2024-02-01
err12
PREAI
errFan, Zetao; Wang, Maojun; Wei, Jin; Nuo, Muqin; Zhou, Jin; Zhang, Jiaxin; Hao, Yilong; Shen, Bo
err分享
err收藏
Static and Dynamic Characteristics of a 1200-V22-m Normally-Off SiCGaN Cascode Device Built With Parallel-Connected SiC JFETs Controlled by a Single GaN HEMT
errIEEE TRANSACTIONS ON POWER ELECTRONICS
IF6.5
err2023-10-01
err2
PREAI
errLyu, Gang; Sun, Jiahui; Wei, Jin; Chen, Kevin J.
err分享
err收藏

研究方向

暂时未获取到该数据
合作学者
合作期刊
李
李腾 (Teng Li)
H 指数: 80 · 论文数: 500
K
Kevin J. Chen
H 指数: 70 · 论文数: 673
J
Jincheng Zhang
H 指数: 69 · 论文数: 1.4K
彭祥 封面图
彭祥 (Xiang Peng)
H 指数: 63 · 论文数: 401
B
Baoling Huang
H 指数: 59 · 论文数: 295
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