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N
Narendar Vadthiya
National Institute of Technology Warangal
22
H指数
78
论文数
1.3K
被引数
0
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26
发表时间
发表时间
IF
被引数
Compositional tuning of metastable ferroelectric phases and Landau-reconstructed negative-capacitance energy landscapes in combinatorial Hf1-xZrxO2 thin films
组合Hf1-xZrxO2薄膜中准稳态铁电相的组分调控与朗道重构负电容能量景观
Scientific Reports
IF
3.9
2026-08-07
0
OA
AI
T. Bhavani; Radha Bayya; Astita Dubey; Shuvam Pawar; Narender Malishetty; Narendar Vadthiya; Dhiren K. Pradhan; T. Venkatappa Rao; Ashok Kumar; Atul Thakre; Hitesh Borkar
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Zr4+-Tailored TiO2 Memristors With Highly Linear Synaptic Plasticity for Neuromorphic Learning and Low-Power Memory Technologies
锆离子调控的二氧化钛忆阻器,具有高度线性的突触可塑性,用于神经形态学习和低功耗存储技术
Advanced Materials Technologies
IF
6.2
2026-08-03
0
PRE
AI
Vaishali Chandmare; Kusum Kumari; R. J. Choudhary; Vinay Palaparthy; Narendar Vadthiya; Hitesh Borkar
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Defect-Controlled Ti-Doped Perovskite Memristors for High Accuracy Neuromorphic Computing
缺陷调控的Ti掺杂钙钛矿忆阻器用于高精度神经形态计算
Advanced Materials Technologies
IF
6.2
2026-08-02
0
PRE
AI
Narender Malishetty; Vaishali Chandmare; Narendar Vadthiya; Hitesh Borkar
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Towards the next era of CMOS scaling: A comprehensive review on the emerging landscape of complementary FET technology
迈向CMOS缩放的新时代:互补场效应晶体管技术新兴格局的全面综述
Materials Science in Semiconductor Processing
IF
4.6
2026-05-25
0
PRE
AI
Sresta Valasa; Venkata Ramakrishna Kotha; Narendar Vadthiya
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Engineering the Spacer for Junctionless Comb-shaped Nanosheet FETs at Sub-5 nm Node: Device to Circuit Realization
在sub-5 nm节点下工程化结less梳状纳米片FET的间隔层:从器件到电路的实现
Micro and Nanostructures
IF
3
2026-05-09
0
PRE
AI
Thomas Daniel; Shiny Angel; Sresta Valasa; Venkata Ramakrishna Kotha; Sunitha Bhukya; Narender Malishetty; Narendar Vadthiya
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Interfacial ion dynamics and synaptic behavior in Ag/MoS2/TiO2 heterostructure memristor for neuromorphic applications
异质结构忆阻器中Ag/MoS2/TiO2界面的离子动力学及突触行为,用于神经形态应用
Materials Science in Semiconductor Processing
IF
4.6
2026-05-05
0
PRE
AI
Narender Malishetty; Vaishali Chandmare; Narendar Vadthiya; Hitesh Borkar
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Thermal-aware performance analysis of a junctionless T-shaped nanosheet FET: a comprehensive study on digital; analog; RF; and circuit applications
无结t形纳米片FET的热感知性能分析: 数字、模拟、射频和电路应用的综合研究
Physica Scripta
IF
2.6
2026-01-15
0
PRE
AI
Naresh Bopparathi; Narendar Vadthiya
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Reliability Analysis of Strain Gauge-Based Pressure Sensors Integrated in Stored Weapon Systems
集成在存储武器系统中的基于应变片的压力传感器的可靠性分析
IEEE Transactions on Reliability
IF
5.7
2025-12-30
0
PRE
AI
Praveen Tandon; Narendar Vadthiya
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Benchmarking of junctionless nanosheet FET and T-shaped nanosheet FETs for sub-5 nm scalable CMOS: digital, analog/RF, and circuit-level insights
用于亚5 nm可扩展CMOS的无结纳米片FET和t形纳米片FET的基准测试: 数字,模拟/RF和电路级见解
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
IF
2.1
2025-11-30
1
PRE
AI
Bopparathi, Naresh; Vadthiya, Narendar
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Comprehensive analysis of tree-shaped nanosheet FETs in junctionless; accumulation; and inversion structures at sub-5 nm node for next-generation digital; analog/RF and circuit applications
次5纳米节点下树状纳米片FET在结自由、积累和反转型结构中的综合分析,面向下一代数字、模拟/RF及电路应用
Physica Scripta
IF
2.6
2025-10-24
0
PRE
AI
Jeshanth Madda; Sresta Valasa; Venkata Ramakrishna Kotha; Sunitha Bhukya; Narender Malishetty; Narendar Vadthiya
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Design of energy-efficient LIF neuron using CMOS compatible gate-all-around floating nanosheet FET for bio-inspired spiking neural networks
基于CMOS兼容的全环绕浮动纳米片FET的高能效LIF神经元设计用于生物启发脉冲神经网络
Neurocomputing
IF
6.5
2025-10-16
0
PRE
AI
Yashodhan Bhatawdekar; Syed Mohammad Riyaz; Lakshmi Amrutha Yechuri; Sresta Valasa; Venkata Ramakrishna Kotha; Sunitha Bhukya; Shubham Tayal; Narendar Vadthiya
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Design Insights of Multilayer MoS2 Fin-Shaped FETs for Digital and Analog/RF Applications
多晶硅MoS2鳍形场效应晶体管在数字及模拟/射频应用中的设计见解
ACS Applied Electronic Materials
IF
4.7
2025-07-26
0
PRE
AI
Venkata Ramakrishna Kotha; Sresta Valasa; Narendar Vadthiya
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Insights Into Substrate Dielectric Engineering of Monolayer MoS₂ FET: Digital/Analog/RF Perspective to Circuit Implementation
单层MoS₂ FET的衬底介电工程研究:从数字/模拟/射频视角到电路实现
IEEE Transactions on Dielectrics and Electrical Insulation
IF
3.1
2025-06-01
0
PRE
AI
Venkata Ramakrishna Kotha; Sresta Valasa; Narendar Vadthiya
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First demonstration of leaky-integrate and fire neuron based GAA nanosheet FET with ultra-low energy consumption down to 0.8fJ/spike for spiking neural network applications
首次基于GAA纳米片FET的漏电积分放电神经元在脉冲神经网络应用中的超低能耗演示,能耗低至0.8fJ/脉冲。
PHYSICA SCRIPTA
IF
2.6
2025-05-20
0
PRE
AI
Kanche, Madhu; Adwaith, Dannayak Venkata Sai; Sai, V. Pavan; Kotha, Venkata Ramakrishna; Valasa, Sresta; Bhukya, Sunitha; Tayal, Shubham; Malishetty, Narender; Vadthiya, Narendar
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Interface trap dynamics and thermal effects in novel junctionless dual gate inverted-U-shaped FinFETs for sub-5 nm node: device to circuit level implementation
用于亚5 nm节点的新型无结双栅极倒U形finfet中的界面陷阱动力学和热效应: 器件到电路级实现
JOURNAL OF PHYSICS D-APPLIED PHYSICS
IF
3.2
2025-02-10
0
PRE
AI
Bandi, Bhanu Prakash; Sornapudi, Uday Sankar Srinivas; Valasa, Sresta; Kotha, Venkata Ramakrishna; Bhukya, Sunitha; Mudidhe, Praveen Kumar; Tayal, Shubham; Vadthiya, Narendar
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Interface traps in the sub-3 nm technology node: A comprehensive analysis and benchmarking of negative capacitance FinFET and nanosheet FETs - A reliability perspective from device to circuit level
MICROELECTRONICS RELIABILITY
IF
1.9
2024-09-01
0
PRE
AI
Valasa, Sresta; Kotha, Venkata Ramakrishna; Vadthiya, Narendar
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Pushing the Boundaries: Design and Simulation Approach of Negative Capacitance Nanosheet FETs with Ferroelectric and Dielectric Spacers at the Sub-3 nm Technology Node for Analog/RF/Mixed Signal Applications
ACS APPLIED ELECTRONIC MATERIALS
IF
4.7
2024-05-09
6
PRE
AI
Valasa, Sresta; Kotha, Venkata Ramakrishna; Vadthiya, Narendar
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Beyond Moore's law - A critical review of advancements in negative capacitance field effect transistors: A revolution in next-generation electronics
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF
4.6
2024-04-01
11
PRE
AI
Valasa, Sresta; Kotha, Venkata Ramakrishna; Vadthiya, Narendar
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Junctionless SOI FinFET with advanced spacer techniques for sub-3 nm technology nodes
采用先进隔离技术的无结SOI FinFET,用于亚3 nm技术节点
AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS
IF
3.2
2022-02-01
26
PRE
AI
Sreenivasulu, V. Bharath; Narendar, Vadthiya
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Performance improvement of spacer engineered n-type SOI FinFET at 3-nm gate length
AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS
IF
3.2
2021-07-01
29
PRE
AI
Sreenivasulu, V. Bharath; Narendar, Vadthiya
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V
V. Bharath Sreenivasulu
H 指数: 24 · 论文数: 58
S
Shubham Tayal
H 指数: 21 · 论文数: 103
H
Hitesh Borkar
H 指数: 19 · 论文数: 95
S
Shweta Tripathi
H 指数: 19 · 论文数: 158
A
Atul Thakre
H 指数: 17 · 论文数: 37
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