Jiaqi He

southern university of science and technology

H指数:13

被引数:1,279

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A High Sensitivity and Linearity AlGaN/GaN SBD Thermal Sensor With Partially Recessed AlGaN Barrier Layer Near the Pt Anode

一种高灵敏度与线性度的AlGaN/GaN肖特基势垒二极管热传感器，其AlGaN势垒层在铂阳极附近部分凹陷。

IEEE Sensors Journal

IF4.5

2026-01-120

PRE

SARS-CoV-2 spike protein induces depressive-like behaviors by disrupting astrocytic Cx43-mediated gap junction intercellular communication

SARS-CoV-2刺突蛋白通过破坏星形胶质细胞Cx43介导的缝隙连接细胞间通讯诱导抑郁样行为

Brain, Behavior, and Immunity

IF0

2025-11-120

PRE

Topological Luttinger-semimetal CoAs3 dye-sensitized photocatalyst for efficient solar hydrogen evolution

拓扑Luttinger半金属CoAs3染料敏化光催化剂用于高效太阳能氢气生成

Nature Communications

IF15.7

2025-10-010

OAAI

Study on the mechanical performance and micro-mechanisms of dry-pressed pure high-calcium fly ash cementitious materials

干压纯高钙粉煤灰胶凝材料的力学性能与微观机理研究

colloids and surfaces a physicochemical and engineering aspects

IF0

2025-09-090

PRE

Symmetry-Breaking Directed Assembly in Achiral Point Groups for Circularly Polarized Room-Temperature Phosphorescence

手性破缺定向组装在非手性点群中实现圆偏振室温磷光

Advanced Materials

IF26.8

2025-08-110

PRE

Gate Leakage suppression and breakdown improvement of InAlN/GaN MIS-HEMTs with N2O surface treatment

N₂O表面处理对InAlN/GaN MIS-HEMTs的栅极漏电抑制和击穿性能改善

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2025-04-010

PRE

Incidence angle-dependent aerodynamic loss characteristics of rearward full-obstruction turbine outlet guide vanes

后置全阻塞涡轮出口导叶的攻角依赖性气动损失特性

PHYSICS OF FLUIDS

IF4.3

2025-04-010

PRE

Improved gate leakage current and breakdown voltage of InAlN/GaN MIS-HEMTs by HfAlOx-based charge-trapping layer dielectric and in situ O3 treatment

APPLIED PHYSICS LETTERS

IF3.6

2025-01-060

PRE

A Novel AlGaN/GaN SBD Thermal Sensor With Ultralow Power, Excellent Linearity, and High Sensitivity

一种新型AlGaN/GaN SBD超低功耗、高线性度、高灵敏度热传感器

IEEE SENSORS JOURNAL

IF4.5

2025-01-010

PRE

Integrative Targeted Metabolomics and Transcriptomics Reveal the Mechanism of Leaf Coloration in Impatiens hawkeri 'Sakimp005'

整合靶向代谢组学和转录组学揭示了Impatiens hawkeri 'Sakimp005'叶片着色机制

INTERNATIONAL JOURNAL OF MOLECULAR SCIENCES

IF4.9

2024-12-280

Porous Carbon Fabricated by Microbial Pretreatment of Brewer's Grain for the Improvement of Toluene Adsorption Performance

微生物预处理啤酒糟制备多孔炭对甲苯吸附性能的改善

MOLECULES

IF4.6

2024-12-160

OAAI

Charge trapping gate stack enabled non-recessed normally off AlGaN/GaN HEMT with high threshold voltage stability

APPLIED PHYSICS LETTERS

IF3.6

2024-10-020

PRE

High-performance β-Ga2O3 Schottky barrier diodes with Mg current blocking layer using spin-on-glass technique

APPLIED PHYSICS LETTERS

IF3.6

2024-09-231

PRE

Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters

APPLIED PHYSICS LETTERS

IF3.6

2024-06-142

PRE

New perspective on sustained antidepressant effect: focus on neurexins regulating synaptic plasticity

CELL DEATH DISCOVERY

IF7

2024-05-012

OAAI

In Situ Hydrogen Bonding-Mediated Self-Synthesis of Graphene-Coated SnO2 as Anode Materials for Lithium-Ion Batteries

原位氢键介导的石墨烯包覆SnO2自合成锂离子电池负极材料

ENERGY TECHNOLOGY

IF3.6

2024-04-180

PRE

Improved breakdown performance in recessed-gate normally off GaN MIS-HEMTs by regrown fishbone trench

APPLIED PHYSICS LETTERS

IF3.6

2024-03-262

Lithium Niobate MEMS Antisymmetric Lamb Wave Resonators with Support Structures

MICROMACHINES

IF3

2024-01-271

OAAI

Low concentration hydrogen detection properties of metal-insulator-semiconductor AlGaN/GaN HEMT sensor

金属-绝缘体-半导体AlGaN/GaN HEMT传感器低浓度氢检测特性

SENSORS AND ACTUATORS B-CHEMICAL

IF7.7

2023-10-014

PRE

Interface charge engineering on an in situ SiNx/AlGaN/GaN platform for normally off GaN MIS-HEMTs with improved breakdown performance

APPLIED PHYSICS LETTERS

IF3.6

2023-09-068

PRE

Jiaqi He

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