arrow
返回
H

H.Y. Yu

Zhejiang Chinese Medical University

52H指数
387论文数
9.1K被引数
收录论文 76
发表时间
Piezoelectric surface acoustic wave memristor neural network
err2026-01-21
err0
errOAAI
errYi Zhang; Yi Deng; Dingchen Wang; Zilong Xiong; Yang Jiang; Chenkai Deng; Chuying Tang; Shaocong Wang; Mujun Li; Xiaohui Wang; Fangzhou Du; Qiaoyu Hu; Xiaojuan Qi; Han Wang; Qing Wang; Hongyu Yu; Zhongrui Wang
err分享
err收藏
A Novel Discrete GaN/AlGaN/GaN-Based Schottky Diode Thermal Sensor With a Sensitivity Up to 13.3 mV/K
err2025-11-01
err0
PREAI
errSun, Yuhan; Wen, Kangyao; Li, Wenmao; Deng, Chenkai; Cui, Yifan; Xu, Shoucheng; Sokolovskij, Robert; Jiang, Yu-Long; Yu, Hong-Yu
err分享
err收藏
2.86-kV vertical Cu2O/Ga2O3 heterojunction diodes with stepped double-layer structure2.86-kV垂直Cu₂O/Ga₂O₃异质结二极管,具有阶梯双层结构
err2025-06-28
err0
PREAI
errXiaoHui Wang; MuJun Li; Yang Jiang; KangYao Wen; ChuYing Tang; FangZhou Du; Chun-Zhang Chen; ChenKai Deng; Yi Zhang; HongHao Lu; YiFan Cui; Qing Wang; HongYu Yu
err分享
err收藏
Spatiotemporal changes of cultivated land utilization in black soil region, China based on geo-information Tupu
err2025-03-25
err0
errOAAI
errLi, Dan; Chen, Guizhen; Xi, Zhilong; He, Pengkai; Xin, Xiuwen; Chen, Jiayuan; Yu, Hongyu; Kang, Guangqing
err分享
err收藏
Improved gate leakage current and breakdown voltage of InAlN/GaN MIS-HEMTs by HfAlOx-based charge-trapping layer dielectric and in situ O3 treatment
err2025-01-06
err0
PREAI
errDu, Fangzhou; Jiang, Yang; Wang, Peiran; Wen, Kangyao; Tang, Chuying; He, Jiaqi; Deng, Chenkai; Zhang, Yi; Li, Mujun; Wang, Xiaohui; Hu, Qiaoyu; Yu, Wenyue; Wang, Qing; Yu, Hongyu
err分享
err收藏
Flexible transparent layered metal oxides for organic devices柔性透明层状金属氧化物用于有机器件
err2025-01-01
err0
errOAAI
errZhang, Tao; Li, Peicheng; Chen, Nan; Su, Jiale; Yang, Zhenxin; Wang, Dengke; Jiang, Nan; Shi, Changsheng; Zhu, Qiang; Yu, Hongyu; Lu, Zheng-Hong
err分享
err收藏
Hydrogen Detection Performance of a Pt-AlGaN/GaN HEMT Sensor at High Temperatures in Air Ambient
err2024-12-23
err1
errOAAI
errLi, Wenmao; Sokolovskij, Robert; Jiang, Yang; Wen, Kangyao; Hu, Qiaoyu; Deng, Chenkai; Wang, Qing; Yu, Hongyu
err分享
err收藏
Charge trapping gate stack enabled non-recessed normally off AlGaN/GaN HEMT with high threshold voltage stability
err2024-10-02
err0
PREAI
errWen, Kangyao; He, Jiaqi; Jiang, Yang; Du, Fangzhou; Deng, Chenkai; Wang, Peiran; Tang, Chuying; Li, Wenmao; Hu, Qiaoyu; Sun, Yuhan; Wang, Qing; Jiang, Yulong; Yu, Hongyu
err分享
err收藏
High-performance β-Ga2O3 Schottky barrier diodes with Mg current blocking layer using spin-on-glass technique
err2024-09-23
err1
PREAI
errLi, MuJun; He, MingHao; Wang, XiaoHui; Jiang, Yang; Wen, KangYao; Du, FangZhou; Deng, ChenKai; He, JiaQi; Zhang, Yi; Yu, WenYue; Wang, Qing; Yu, HongYu
err分享
err收藏
Threshold voltage modulation on a CTL-based monolithically integrated E/D-mode GaN inverters platform with improved voltage transfer performance
err2024-07-17
err1
PREAI
errJiang, Yang; Du, FangZhou; Wen, KangYao; Zhang, Yi; Li, MuJun; Tang, ChuYing; Deng, ChenKai; Yu, WenYue; Wang, ZhongRui; Wang, Qing; Yu, HongYu
err分享
err收藏
Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters
err2024-06-14
err2
PREAI
errJiang, Yang; Du, FangZhou; Wen, KangYao; He, JiaQi; Wang, PeiRan; Li, MuJun; Tang, ChuYing; Zhang, Yi; Wang, ZhongRui; Wang, Qing; Yu, HongYu
err分享
err收藏
Improved breakdown performance in recessed-gate normally off GaN MIS-HEMTs by regrown fishbone trench
err2024-03-26
err2
errOAAI
errHe, JiaQi; Wang, PeiRan; Du, FangZhou; Wen, KangYao; Jiang, Yang; Tang, ChuYing; Deng, ChenKai; Li, MuJun; Hu, QiaoYu; Tao, Nick; Xiang, Peng; Cheng, Kai; Wang, Qing; Li, Gang; Yu, HongYu
err分享
err收藏
Interface charge engineering on an in situ SiNx/AlGaN/GaN platform for normally off GaN MIS-HEMTs with improved breakdown performance
err2023-09-06
err8
PREAI
errHe, Jiaqi; Wen, Kangyao; Wang, Peiran; He, Minghao; Du, Fangzhou; Jiang, Yang; Tang, Chuying; Tao, Nick; Wang, Qing; Li, Gang; Yu, Hongyu
err分享
err收藏