Kangyao Wen

复旦大学

H指数:7

被引数:143

个人简介

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A High Sensitivity and Linearity AlGaN/GaN SBD Thermal Sensor With Partially Recessed AlGaN Barrier Layer Near the Pt Anode

一种高灵敏度与线性度的AlGaN/GaN肖特基势垒二极管热传感器，其AlGaN势垒层在铂阳极附近部分凹陷。

IEEE Sensors Journal

IF4.5

2026-01-120

PRE

A Novel Discrete GaN/AlGaN/GaN-Based Schottky Diode Thermal Sensor With a Sensitivity Up to 13.3 mV/K

IEEE ELECTRON DEVICE LETTERS

IF4.5

2025-11-010

PRE

2.86-kV vertical Cu2O/Ga2O3 heterojunction diodes with stepped double-layer structure

2.86-kV垂直Cu₂O/Ga₂O₃异质结二极管，具有阶梯双层结构

Journal of Alloys and Compounds

IF6.3

2025-06-280

PRE

High-temperature sensing of low-concentration CO2 using La2O3-gated AlGaN/GaN HEMT sensor

SENSORS AND ACTUATORS A-PHYSICAL

IF4.9

2025-04-010

PRE

Gate Leakage suppression and breakdown improvement of InAlN/GaN MIS-HEMTs with N2O surface treatment

N₂O表面处理对InAlN/GaN MIS-HEMTs的栅极漏电抑制和击穿性能改善

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2025-04-010

PRE

Optimization of CuOx/Ga2O3 Heterojunction Diodes for High-Voltage Power Electronics

用于高压电力电子的CuOx/Ga2O3异质结二极管的优化

NANOMATERIALS

IF4.3

2025-01-080

OAAI

Improved gate leakage current and breakdown voltage of InAlN/GaN MIS-HEMTs by HfAlOx-based charge-trapping layer dielectric and in situ O3 treatment

APPLIED PHYSICS LETTERS

IF3.6

2025-01-060

PRE

A Novel AlGaN/GaN SBD Thermal Sensor With Ultralow Power, Excellent Linearity, and High Sensitivity

一种新型AlGaN/GaN SBD超低功耗、高线性度、高灵敏度热传感器

IEEE SENSORS JOURNAL

IF4.5

2025-01-010

PRE

Hydrogen Detection Performance of a Pt-AlGaN/GaN HEMT Sensor at High Temperatures in Air Ambient

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2024-12-231

Suppression of Short-Channel Effects in AlGaN/GaN HEMTs Using SiNx Stress-Engineered Technique

NANOMATERIALS

IF4.3

2024-11-130

OAAI

Charge trapping gate stack enabled non-recessed normally off AlGaN/GaN HEMT with high threshold voltage stability

APPLIED PHYSICS LETTERS

IF3.6

2024-10-020

PRE

High-performance β-Ga2O3 Schottky barrier diodes with Mg current blocking layer using spin-on-glass technique

APPLIED PHYSICS LETTERS

IF3.6

2024-09-231

PRE

Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiNx Stress-Engineering Technique

NANOMATERIALS

IF4.3

2024-09-101

OAAI

Threshold voltage modulation on a CTL-based monolithically integrated E/D-mode GaN inverters platform with improved voltage transfer performance

APPLIED PHYSICS LETTERS

IF3.6

2024-07-171

PRE

Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters

APPLIED PHYSICS LETTERS

IF3.6

2024-06-142

PRE

Improved breakdown performance in recessed-gate normally off GaN MIS-HEMTs by regrown fishbone trench

APPLIED PHYSICS LETTERS

IF3.6

2024-03-262

Interface charge engineering on an in situ SiNx/AlGaN/GaN platform for normally off GaN MIS-HEMTs with improved breakdown performance

APPLIED PHYSICS LETTERS

IF3.6

2023-09-068

PRE

Carrier transport mechanism of Mg/Pt/Au Ohmic contact on p-GaN/AlGaN/GaN platform with ultra-low resistivity

APPLIED PHYSICS LETTERS

IF3.6

2023-08-293

PRE

Current collapse suppression in AlGaN/GaN HEMTs using dual-layer SiNx stressor passivation

APPLIED PHYSICS LETTERS

IF3.6

2023-06-084

PRE

Quasi-normally off AlGaN/GaN high-electron-mobility transistors with p-type CuOx gate synthesized through magnetron reactive sputtering

通过磁控反应溅射合成的具有p型CuOx栅极的准常关AlGaN/GaN高电子迁移率晶体管

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2023-02-012

PRE

Kangyao Wen

个人简介

教育背景

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