Fangzhou Du

southern university of science and technology

H指数:13

被引数:611

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Monolithically integrated InAlN/GaN inverters with thermal stability and high frequency via InAlOxN1-x charge trapping layer

单片集成InAlN/GaN反相器，通过InAlOxN1-x电荷捕获层实现热稳定性和高频性能

Journal of Alloys and Compounds

IF6.3

2026-07-080

PRE

Piezoelectric surface acoustic wave memristor neural network

Science Advances

IF12.5

2026-01-210

OAAI

Low-Resistivity Ohmic Contact on p-GaN/AlGaN/GaN Enabled by Mg-Doped Spin-on-Glass Treatment

通过Mg掺杂旋涂玻璃处理实现的p-GaN/AlGaN/GaN低电阻欧姆接触

IEEE Electron Device Letters

IF4.5

2025-07-010

PRE

2.86-kV vertical Cu2O/Ga2O3 heterojunction diodes with stepped double-layer structure

2.86-kV垂直Cu₂O/Ga₂O₃异质结二极管，具有阶梯双层结构

Journal of Alloys and Compounds

IF6.3

2025-06-280

PRE

Gate Leakage suppression and breakdown improvement of InAlN/GaN MIS-HEMTs with N2O surface treatment

N₂O表面处理对InAlN/GaN MIS-HEMTs的栅极漏电抑制和击穿性能改善

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2025-04-010

PRE

Optimization of CuOx/Ga2O3 Heterojunction Diodes for High-Voltage Power Electronics

用于高压电力电子的CuOx/Ga2O3异质结二极管的优化

NANOMATERIALS

IF4.3

2025-01-080

OAAI

Improved gate leakage current and breakdown voltage of InAlN/GaN MIS-HEMTs by HfAlOx-based charge-trapping layer dielectric and in situ O3 treatment

APPLIED PHYSICS LETTERS

IF3.6

2025-01-060

PRE

A Novel AlGaN/GaN SBD Thermal Sensor With Ultralow Power, Excellent Linearity, and High Sensitivity

一种新型AlGaN/GaN SBD超低功耗、高线性度、高灵敏度热传感器

IEEE SENSORS JOURNAL

IF4.5

2025-01-010

PRE

Suppression of Short-Channel Effects in AlGaN/GaN HEMTs Using SiNx Stress-Engineered Technique

NANOMATERIALS

IF4.3

2024-11-130

OAAI

Charge trapping gate stack enabled non-recessed normally off AlGaN/GaN HEMT with high threshold voltage stability

APPLIED PHYSICS LETTERS

IF3.6

2024-10-020

PRE

High-performance β-Ga2O3 Schottky barrier diodes with Mg current blocking layer using spin-on-glass technique

APPLIED PHYSICS LETTERS

IF3.6

2024-09-231

PRE

Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiNx Stress-Engineering Technique

NANOMATERIALS

IF4.3

2024-09-101

OAAI

Threshold voltage modulation on a CTL-based monolithically integrated E/D-mode GaN inverters platform with improved voltage transfer performance

APPLIED PHYSICS LETTERS

IF3.6

2024-07-171

PRE

Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters

APPLIED PHYSICS LETTERS

IF3.6

2024-06-142

PRE

Improved breakdown performance in recessed-gate normally off GaN MIS-HEMTs by regrown fishbone trench

APPLIED PHYSICS LETTERS

IF3.6

2024-03-262

Lithium Niobate MEMS Antisymmetric Lamb Wave Resonators with Support Structures

MICROMACHINES

IF3

2024-01-271

OAAI

Novel Thin-Layer Fountain Photobioreactors for the High-Density Cultivation of Spirulina sp

ACS SUSTAINABLE CHEMISTRY & ENGINEERING

IF7.3

2023-11-131

PRE

Interface charge engineering on an in situ SiNx/AlGaN/GaN platform for normally off GaN MIS-HEMTs with improved breakdown performance

APPLIED PHYSICS LETTERS

IF3.6

2023-09-068

PRE

Carrier transport mechanism of Mg/Pt/Au Ohmic contact on p-GaN/AlGaN/GaN platform with ultra-low resistivity

APPLIED PHYSICS LETTERS

IF3.6

2023-08-293

PRE

Quasi-normally off AlGaN/GaN high-electron-mobility transistors with p-type CuOx gate synthesized through magnetron reactive sputtering

通过磁控反应溅射合成的具有p型CuOx栅极的准常关AlGaN/GaN高电子迁移率晶体管

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2023-02-012

PRE

Fangzhou Du

个人简介

教育背景

工作经历

荣誉奖项

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