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Xiaolei Wang

chinese academy of sciences

23H指数
237论文数
2.2K被引数
收录论文 60
发表时间
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A 950 °C-Thermal-Budget-Compatible Al2O3-Embedded Hf0.5Zr0.5O2 Poly-Si Channel- Last FeFET for 3-D NAND Applications950 °C-热预算兼容的Al2O3-嵌入Hf0.5Zr0.5O2多晶硅通道-后FeFET用于3-D NAND应用
errIEEE Transactions on Electron Devices
IF3.2
err2026-09-07
err0
PREAI
errWenbo Fan; Xiaoyu Ke; Yajing Ding; Xianzhou Shao; Saifei Dai; Tao Hu; Runhao Han; Min Liao; Xinpei Jia; Fengbin Tian; Tingting Li; Bo Tang; Junshuai Chai; Hao Xu; Qing Luo; Xiaolei Wang; Wenwu Wang; Tianchun Ye
err分享
err收藏
High-Performance P-Channel FDSOI MOSFETs via Modified Silicide-as-Diffusion-Source-Induced Dopant Segregation (M-SADS)通过改进的硅化物-扩散源诱导掺杂剂分凝（M-SADS）实现高性能P沟道FDSOI MOSFETs
errIEEE Electron Device Letters
IF4.5
err2026-09-02
err0
PREAI
errBinbin Xu; Jing Xu; Keyou Tong; Wenjun Zhang; Jianfeng Gao; Xiaolei Wang; Tianchun Ye; Jun Luo
err分享
err收藏
Role of Interlayer and Interfacial Traps in Endurance Degradation of FeFETs层间和界面陷阱在FeFETs耐久性退化中的作用
errIEEE Electron Device Letters
IF4.5
err2026-06-22
err0
PREAI
errZuowei Zhang; Yuanquan Huang; Junshuai Chai; Xiaolei Wang; Zhicheng Wu; Tiancheng Gong; Qing Luo
err分享
err收藏
Experiment Demonstration of Hybrid-Orientation Sequential CFET Boosting Hole Mobility混合取向顺序CFET提升空穴迁移率的实验演示
errIEEE Electron Device Letters
IF4.5
err2026-06-12
err0
PREAI
errKun Yang; Zhongrui Wang; Zhongshan Xie; Hang Zhang; Mingzhu Yan; Junjie Li; Yanyi Pan; Yingze Ren; Yupeng Lu; Jinbiao Liu; Meihe Zhang; Yadong Zhang; Lei Cao; Qingzhu Zhang; Junfeng Li; Huaxiang Yin; Xiaolei Wang; Jun Luo
err分享
err收藏
Enhancing HfO2-Based Si Channel FeFET Retention by Tunneling Barrier Engineering: Inserting Al2O3 Layers to Increase Tunneling Barrier通过隧穿势垒工程增强HfO2基Si沟道FeFET的存储保持性：插入Al2O3层以提高隧穿势垒
errIEEE Transactions on Electron Devices
IF3.2
err2026-06-05
err0
PREAI
errZeqi Chen; Tao Hu; Xinpei Jia; Ruoyao Ji; Runhao Han; Mingkai Bai; Yuejia Zhou; Runteng Zhu; Xiaoqing Sun; Xiaoyu Ke; Junshuai Chai; Hao Xu; Kai Han; Kechao Tang; Xiaolei Wang; Wenwu Wang; Tianchun Ye
err分享
err收藏
Demonstration of EOT Scaling in Si NSFETs Using Dead-Layer-Suppressed HfZrO2/ZrO2 Stacks Near Morphotropic Phase Boundary使用近形变相边界抑制死层的HfZrO2/ZrO2堆叠在Si NSFETs中实现EOT缩放
errIEEE Electron Device Letters
IF4.5
err2026-06-01
err0
PREAI
errKeyou Tong; Jing Xu; Wenjun Zhang; Xinyue Zhang; Shuai Yang; Binbin Xu; Xiaoxue Ji; Jianhong Liu; Jiahan Yu; Wenjuan Xiong; Xuanyi Li; Jianfeng Gao; Xiaolei Wang; Jun Luo
err分享
err收藏
Linear and Precise VFB Modulation via LaFMD-Induced Dipoles in TiN/HfO2/SiO2 Gate Stacks Without EOT and Dielectric Thickness Penalty通过LaFMD诱导偶极子实现TiN/HfO2/SiO2栅堆叠中线性且精确的VFB调制，且无EOT和介质厚度惩罚
errIEEE Electron Device Letters
IF4.5
err2026-05-15
err0
PREAI
errWenjun Zhang; Jing Xu; Sirong Liu; Keyou Tong; Xinyue Zhang; Wenjuan Xiong; Shuai Yang; Binbin Xu; Xuanyi Li; Jianfeng Gao; Xiaolei Wang; Jun Luo
err分享
err收藏
Unveiling Retention Loss Mechanism in FeFETs With Gate-Side Interlayer by Decoupling Trapped Charges and Ferroelectric Polarization通过解耦捕获电荷和铁电极化揭示具有栅侧中间层的FeFETs中的保持损失机制
errIEEE Transactions on Electron Devices
IF3.2
err2026-05-12
err0
PREAI
errRunhao Han; Tao Hu; Jia Yang; Saifei Dai; Yajing Ding; Mingkai Bai; Xianzhou Shao; Junshuai Chai; Hao Xu; Qing Luo; Wenwu Wang; Tianchun Ye; Xiaolei Wang
err分享
err收藏
Linear VFB Tuning and Interface Improvement via TMA/Ultrathin HfO2 Dual-Buffer in La2O3 Dipole-First Gate Stacks通过TMA/超薄HfO2双缓冲层对La2O3偶极层优先栅极堆叠中的线性VFB调谐和界面改善
errIEEE Transactions on Electron Devices
IF3.2
err2026-05-04
err0
PREAI
errWenjun Zhang; Jing Xu; Keyou Tong; Sirong Liu; Shuai Yang; Wenjuan Xiong; Binbin Xu; Yong Du; Xiaoxue Ji; Jianhong Liu; Jianfeng Gao; Xiaolei Wang; Jun Luo
err分享
err收藏
LaOx Atomic Flip Dipole Technique With Single Dipole Shifter in CMOS GAA NSFETsLaOx原子翻转偶极技术在CMOS GAA NSFETs中的单偶极移位器
errIEEE Transactions on Electron Devices
IF3.2
err2026-04-06
err0
PREAI
errYu Wang; Jiaxin Yao; Yanzhao Wei; Qingzhu Zhang; Feixiong Wang; Shuang Liu; Lei Cao; Yuzhe Yu; Wenjuan Xiong; Shuai Yang; Junfeng Li; Huaxiang Yin; Xiaolei Wang; Jun Luo
err分享
err收藏
Fabricated Parasitic-Interbridge-Free TreeFETs for CMOS Low-Power Applications制备无寄生-互桥接树形场效应晶体管用于CMOS低功耗应用
errIEEE Electron Device Letters
IF4.5
err2026-03-13
err0
PREAI
errYuzhe Yu; Jiaxin Yao; Lei Cao; Yu Wang; Yanzhao Wei; Jie Xu; Zhongrui Wang; Hang Zhang; Yangyang Hu; Qingzhu Zhang; Xiaolei Wang; Jun Luo; Huaxiang Yin
err分享
err收藏
Interlayer Co-Design Enabling a Large Memory Window and Robust Reliability in Ferroelectric Vertical Gate-All-Around FETs层间协同设计实现铁电垂直环绕栅FinFET的大内存窗口和可靠鲁棒性
errIEEE Electron Device Letters
IF4.5
err2026-03-04
err0
PREAI
errRunhao Han; Junshuai Chai; Tao Hu; Jia Yang; Tairan Luo; Xianzhou Shao; Min Liao; Xiaoqing Sun; Yong Du; Wenliang Liu; Kai Han; Hao Xu; Qing Luo; Xiaolei Wang; Wenwu Wang; Tianchun Ye
err分享
err收藏
Novel Double-Side Cross-Coupled Interconnect of Complementary FET 6T-SRAM for Continuous Area Scaling and Performance Optimization新型双面交叉耦合互补FET 6T-SRAM互连结构，用于持续面积缩放和性能优化
errIEEE Transactions on Electron Devices
IF3.2
err2026-03-04
err0
PREAI
errJie Xu; Lei Cao; Yuzhe Yu; Qingkun Li; Hang Zhang; Xin Wang; Jiaxin Yao; Qingzhu Zhang; Kun Luo; Yongliang Li; Xiaolei Wang; Huaxiang Yin
err分享
err收藏
Asymmetrical Source/Drain Induced Localized Hot-Carrier Degradation and Parasitic PBTI in n-Type Vertical Nanosheet FET非对称源/漏诱导的局部热点载流子退化及寄生PBTI在n型垂直纳米片FET中
errIEEE Transactions on Electron Devices
IF3.2
err2026-03-03
err0
PREAI
errJiao Chen; Zhicheng Wang; Hong Yang; Yunfei Shi; Yongkui Zhang; Bocheng Yang; Qianqian Liu; Huaxiang Yin; Huilong Zhu; Xiaolei Wang; Jun Luo
err分享
err收藏
Dynamic Evolution of Hydrogen in IGZO Transistors for PBTI Improvement by Low-Temperature Atmosphere Annealing通过低温气氛退火改善PBTI的IGZO晶体管中氢的动态演化
errIEEE Journal of the Electron Devices Society
IF2.4
err2026-01-01
err0
PREAI
errXiang, Liang; Yan, Gangping; Yang, Hong; Yang, Shangbo; Xu, Gaobo; Sun, Mingyang; Wang, Guilei; Yin, Huaxiang; Wang, Xiaolei; Luo, Jun; Wang, Wenwu
err分享
err收藏
Record-High Critical Current Density in Infiltration-Processed MgB2 Bulk通过渗透工艺制备的MgB2块材实现了创纪录的高临界电流密度。
errMaterials Today Physics
IF9.7
err2025-11-25
err0
PREAI
errJing-Han Gao; Xiaolei Wang; Chen Guo; Daxing Huang; Hao Yu; Yan Zhang; Hongwei Gu; Fazhu Ding; Zizhao Gan
err分享
err收藏
Role of Electron–Hole Recombination on Endurance Degradation in Si Channel FeFET With TiN/Hf0.5Zr0.5O2/SiOx/Si (MFIS) Gate Structure电子-空穴复合在Si沟道FeFET（TiN/Hf0.5Zr0.5O2/SiOx/Si，MFIS）栅极结构中耐久性退化中的作用
errIEEE Transactions on Electron Devices
IF3.2
err2025-11-03
err0
PREAI
errXinpei Jia; Tao Hu; Mingkai Bai; Xiaoyu Ke; Xiaoqing Sun; Junshuai Chai; Kai Han; Yanrong Wang; Hao Xu; Xiaolei Wang; Jing Zhang; Wenwu Wang
err分享
err收藏
Linear VFB Modulation and Interface Improvement in La2O3 Dipole-First Gate Stack via TMA Pre-Treatment Without EOT Deterioration线性VFB调制及通过TMA预处理在La2O3偶极子优先栅堆栈中的界面改善，且不恶化等效氧化物厚度
errIEEE Electron Device Letters
IF4.5
err2025-10-09
err0
PREAI
errWenjun Zhang; Jing Xu; Keyou Tong; Shuai Yang; Binbin Xu; Xiaoxue Ji; Jianhong Liu; Zeyu Fan; Jianfeng Gao; Xiaolei Wang; Jun Luo
err分享
err收藏
Investigation on the dipole distribution at ferroelectric/dielectric interface铁电/介质界面偶极子分布的研究
errPhysica Scripta
IF2.6
err2025-09-11
err0
PREAI
errManru Gong; Lixing Zhou; Xiaolei Wang; Saifei Dai; Xianzhou Shao; Yuxia Feng; Jialu Cui; Cong Dai; Shiwei Feng; Yamin Zhang
err分享
err收藏
Investigating the Charge Trapping Behavior and Enhancing the Memory Window of Silicon Channel Hf0.5Zr0.5O2 FeFET With SiO2/HfO2/SiO2 Gate Side Interlayer研究硅通道Hf0.5Zr0.5O2 FeFET中电荷捕获行为并增强其记忆窗口，通过SiO2/HfO2/SiO2栅侧中间层。
errIEEE Transactions on Electron Devices
IF3.2
err2025-08-01
err0
PREAI
errRunhao Han; Jia Yang; Tao Hu; Mingkai Bai; Yajing Ding; Xianzhou Shao; Xinpei Jia; Saifei Dai; Xiaoqing Sun; Junshuai Chai; Hao Xu; Kai Han; Xiaolei Wang; Wenwu Wang; Tianchun Ye
err分享
err收藏

研究方向

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Philippe Ciais
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唐波 封面图
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张
张军 (Jun Zhang)
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