Attilio Belmonte - Publications, H-index & Citations

Attilio Belmonte

IMEC

27H指数

140论文数

3.0K被引数

收录论文 19

发表时间

Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative V_T Shift Revealed via DC and 1/f Noise Measurements IGZO TFTs在pBTI诱导负V_T漂移后通过DC和1/f噪声测量揭示的带尾态展宽

IEEE Electron Device Letters

IF4.5

2026-03-19

PREAI

R. Asanovski; P. Rinaudo; A. Chasin; Y. Zhao; H. F. W. Dekkers; M. J. van Setten; D. Matsubayashi; N. Rassoul; A. Belmonte; G. S. Kar; B. Kaczer; J. Franco

Identification and quantification of ferroelectric phases in HfZrOx thin films using the precession electron diffraction technique 利用摆动电子衍射技术对HfZrOx薄膜中的铁电相进行识别和定量分析

Applied Surface Science

IF6.9

2026-02-09

PREAI

Pradyumna Kumar Parida; Olivier Richard; Dae Seon Kwon; Gourab De; Mihaela Ioana Popovici; Paola Favia; Attilio Belmonte; Eva Grieten

Improved Ferroelectric Properties of Hafnium Zirconium Oxide Solid Solution and Nanolaminate via Functional Capping Layer Engineering for Low-Power Memory Applications

ACS Applied Energy Materials

IF5.5

2026-01-22

PREAI

Hyun-Cheol Kim; Mihaela Ioana Popovici; Gourab De; Dae Seon Kwon; Gwon Kim; Hendrik F. W. Dekkers; Laura Nyns; Attilio Belmonte; Annelies Delabie; Jan Van Houdt

Seed layer effect on the phase evolution of the La-doped hafnium zirconium oxide with back-end-of-line compatibility 种子层效应对与后端工艺兼容的La掺杂铪锆氧化物相演变的影响

Applied Surface Science

IF6.9

2025-10-01

PREAI

Dae Seon Kwon; Jasper Bizindavyi; Pradyumna Kumar Parida; Gourab De; Hyun-Cheol Kim; Olivier Richard; Paola Favia; Attilio Belmonte; Annelies Delabie; Laura Nyns; Gouri Sankar Kar; Jan Van Houdt; Mihaela Ioana Popovici

Pathways for Retention Boost in Atomic Layer Etched IGZO-Based Capacitorless DRAM 原子层刻蚀IGZO基无电容DRAM的保持力提升路径

IEEE Electron Device Letters

IF4.5

2025-07-01

PREAI

K. Izukashi; D. Matsubayashi; A. Belmonte; S. Kundu; Y. Wan; F. G. Redondo; H. Oh; A. Sharma; S. Subhechha; H. Puliyalil; A. Chasin; H. Dekkers; A. Pavel; N. Rassoul; G. S. Kar

In-Poor IGZO: Superior Resilience to Hydrogen in Forming Gas Anneal and PBTI In-Poor IGZO: 在形成气体退火和PBTI中对氢的卓越抗性

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2025-04-28

PREAI

Kruv, A; van Setten, MJ; Chasin, A; Matsubayashi, D; Dekkers, HFW; Pavel, A; Wan, YQ; Trivedi, K; Rassoul, N; Li, J; Jiang, YC; Subhechha, S; Pourtois, G; Belmonte, A; Kar, GS

Improvement of the Ferroelectric Response of La-Doped Hafnium Zirconium Oxide Employing Tungsten Oxide Interfacial Layer with Back-End-of-Line Compatibility

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2024-07-26

PREAI

Kwon, Dae Seon; Bizindavyi, Jasper; De, Gourab; Belmonte, Attilio; Delabie, Annelies; Nyns, Laura; Kar, Gouri Sankar; Van Houdt, Jan; Popovici, Mihaela Ioana

Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression

SCIENTIFIC REPORTS

IF3.9

2022-11-12

OAAI

Kim, Donguk; Kim, Je-Hyuk; Choi, Woo Sik; Yang, Tae Jun; Jang, Jun Tae; Belmonte, Attilio; Rassoul, Nouredine; Subhechha, Subhali; Delhougne, Romain; Kar, Gouri Sankar; Lee, Wonsok; Cho, Min Hee; Ha, Daewon; Kim, Dae Hwan

Deposition, Characterization, and Performance of Spinel InGaZnO4

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2022-02-23

PREAI

Dekkers, Hendrik F. W.; van Setten, Michiel J.; Belmonte, Attilio; Chasin, Adrian, V; Subhechha, Subhali; Rassoul, Nouredine; Glushkova, Anastasia, V; Delhougne, Romain; Kar, Gouri Sankar

Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories

MICROMACHINES

IF3

2021-09-08

OAAI

Ramesh, Sivaramakrishnan; Ajaykumar, Arjun; Ragnarsson, Lars-Ake; Breuil, Laurent; El Hajjam, Gabriel Khalil; Kaczer, Ben; Belmonte, Attilio; Nyns, Laura; Soulie, Jean-Philippe; van den Bosch, Geert; Rosmeulen, Maarten

Impact of La-OH bonds on the retention of Co/LaSiO CBRAM

APPLIED PHYSICS LETTERS

IF3.6

2020-10-12

OAAI

Radhakrishnan, J.; Belmonte, A.; Nyns, L.; Devulder, W.; Vereecke, G.; Donadio, G. L.; Kumbhare, P.; Delhougne, R.; Houssa, M.; Kar, G. S.; Goux, L.

Key material parameters driving CBRAM device performances

FARADAY DISCUSSIONS

IF3.1

2019-01-01

OAAI

Goux, Ludovic; Radhakrishnan, Janaki; Belmonte, Attilio; Witters, Thomas; Devulder, Wouter; Redolfi, Augusto; Kundu, Shreya; Houssa, Michel; Kar, Gouri Sankar

Voltage-controlled reverse filament growth boosts resistive switching memory 电压控制的反向灯丝生长提高了电阻开关存储器

NANO RESEARCH

IF9

2018-02-02

PREAI

Belmonte, Attilio; Celano, Umberto; Chen, Zhe; Radhaskrishnan, Janaki; Redolfi, Augusto; Clima, Sergiu; Richard, Olivier; Bender, Hugo; Kar, Gouri Sankar; Vandervorst, Wilfried; Goux, Ludovic

Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories

NANOSCALE

IF5.1

2016-01-01

PREAI

Celano, U.; Giammaria, G.; Goux, L.; Belmonte, A.; Jurczak, M.; Vandervorst, W.

Origin of the current discretization in deep reset states of an Al2O3/Cu-based conductive-bridging memory, and impact on state level and variability

APPLIED PHYSICS LETTERS

IF3.6

2014-06-13

OAAI

Belmonte, A.; Degraeve, R.; Fantini, A.; Kim, W.; Houssa, M.; Jurczak, M.; Goux, L.

Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices 纳米尺度电阻式存储器件中导电细丝的三维观察

NANO LETTERS

IF9.1

2014-04-10

303

PREAI

Celano, Umberto; Goux, Ludovic; Belmonte, Attilio; Opsomer, Karl; Franquet, Alexis; Schulze, Andreas; Detavernier, Christophe; Richard, Olivier; Bender, Hugo; Jurczak, Malgorzata; Vandervorst, Wilfried

Influence of Carbon Alloying on the Thermal Stability and Resistive Switching Behavior of Copper-Telluride Based CBRAM Cells

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2013-07-17

OAAI

Devulder, Wouter; Opsomer, Karl; Seidel, Felix; Belmonte, Attilio; Muller, Robert; De Schutter, Bob; Bender, Hugo; Vandervorst, Wilfried; Van Elshocht, Sven; Jurczak, Malgorzata; Goux, Ludovic; Detavernier, Christophe

Switching mechanism and reverse engineering of low-power Cu-based resistive switching devices

NANOSCALE

IF5.1

2013-01-01

PREAI

Celano, Umberto; Goux, Ludovic; Opsomer, Karl; Belmonte, Attilio; Iapichino, Martina; Detavernier, Christophe; Jurczak, Malgorzata; Vandervorst, Wilfried

Impact of bottom electrode and SrxTiyOz film formation on physical and electrical properties of metal-insulator-metal capacitors

APPLIED PHYSICS LETTERS

IF3.6

2011-05-02

PREAI

Pawlak, M. A.; Kaczer, B.; Kim, M. -S.; Popovici, M.; Swerts, J.; Wang, W. -C.; Opsomer, K.; Favia, P.; Tomida, K.; Belmonte, A.; Govoreanu, B.; Vrancken, C.; Demeurisse, C.; Bender, H.; Afanas'ev, V. V.; Debusschere, I.; Altimime, L.; Kittl, J. A.

研究方向