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Evidence of contact-induced variability in industrially-fabricated highly-scaled MoS2 FETs Panarella, Luca; Kaczer, Ben; Smets, Quentin; Tyaginov, Stanislav; Canflanca, Pablo Saraza; Vici, Andrea; Verreck, Devin; Schram, Tom; Lin, Dennis; Knobloch, Theresia; Grasser, Tibor; de la Rosa, Cesar Lockhart; Kar, Gouri S.; Afanas'ev, Valeri 分享 收藏
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Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors Illarionov, Yu. Yu.; Karl, A.; Smets, Q.; Kaczer, B.; Knobloch, T.; Panarella, L.; Schram, T.; Brems, S.; Cott, D.; Asselberghs, I.; Grasser, T. 分享 收藏
Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range Tyaginov, Stanislav; Bury, Erik; Grill, Alexander; Yu, Zhuoqing; Makarov, Alexander; De Keersgieter, An; Vexler, Mikhail; Vandemaele, Michiel; Wang, Runsheng; Spessot, Alessio; Chasin, Adrian; Ben Kaczer 分享 收藏
Impact of Nitridation on Bias Temperature Instability and Hard Breakdown Characteristics of SiON MOSFETs Tyaginov, Stanislav; O'Sullivan, Barry; Chasin, Adrian; Rawal, Yaksh; Chiarella, Thomas; Cavalcante, Camila Toledo de Carvalho; Kimura, Yosuke; Vandemaele, Michiel; Ritzenthaler, Romain; Mitard, Jerome; Palayam, Senthil Vadakupudhu; Reifsnider, Jason; Kaczer, Ben 分享 收藏
A Pragmatic Model to Predict Future Device Aging Brown, James; Tok, Kean Hong; Gao, Rui; Ji, Zhigang; Zhang, Weidong; Marsland, John S.; Chiarella, Thomas; Franco, Jacopo; Kaczer, Ben; Linten, Dimitri; Zhang, Jian Fu 分享 收藏
Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology? 二维集成电子电路透视: 科学白日梦还是颠覆性技术？ Waltl, Michael; Knobloch, Theresia; Tselios, Konstantinos; Filipovic, Lado; Stampfer, Bernhard; Hernandez, Yoanlys; Waldhor, Dominic; Illarionov, Yury; Kaczer, Ben; Grasser, Tibor 分享 收藏
Deep Understanding of Electron Beam Effects on 2D Layered Semiconducting Devices Under Bias Applications Lee, Kookjin; Ji, Hyunjin; Kim, Yanghee; Kaczer, Ben; Lee, Hyebin; Ahn, Jae-Pyoung; Choi, Junhee; Grill, Alexander; Panarella, Luca; Smets, Quentin; Verreck, Devin; Van Beek, Simon; Chasin, Adrian; Linten, Dimitri; Na, Junhong; Lee, Jae Woo; De Wolf, Ingrid; Kim, Gyu-Tae 分享 收藏
Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories Ramesh, Sivaramakrishnan; Ajaykumar, Arjun; Ragnarsson, Lars-Ake; Breuil, Laurent; El Hajjam, Gabriel Khalil; Kaczer, Ben; Belmonte, Attilio; Nyns, Laura; Soulie, Jean-Philippe; van den Bosch, Geert; Rosmeulen, Maarten 分享 收藏
Modeling and Understanding the Compact Performance of h-BN Dual-Gated ReS2 Transistor H-bn双栅ReS2晶体管的建模和紧凑性能的理解 Lee, Kookjin; Choi, Junhee; Kaczer, Ben; Grill, Alexander; Lee, Jae Woo; Van Beek, Simon; Bury, Erik; Diaz-Fortuny, Javier; Chasin, Adrian; Lee, Jaewoo; Chun, Jungu; Shin, Dong Hoon; Na, Junhong; Cho, Hyeran; Lee, Sang Wook; Kim, Gyu-Tae 分享 收藏
Defect profiling in FEFET Si:HfO2 layers O'Sullivan, B. J.; Putcha, V; Izmailov, R.; Afanas'ev, V; Simoen, E.; Jung, T.; Higashi, Y.; Degraeve, R.; Truijen, B.; Kaczer, B.; Ronchi, N.; McMitchell, S.; Banerjee, K.; Clima, S.; Breuil, L.; Van den Bosch, G.; Linten, D.; Van Houdt, J. 分享 收藏
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