arrow
返回
M

Morishita, Aoi

Waseda University

0H指数
5论文数
0被引数
收录论文 3
发表时间
Over 1 A/mm drain current density and 3.6 W/mm output power density in 2DHG diamond MOSFETs with highly doped regrown source/drain
errCARBON
IF11.6
err2022-03-01
err12
errOAAI
errKudara, Ken; Arai, Masakazu; Suzuki, Yukiko; Morishita, Aoi; Tsunoda, Jun; Hiraiwa, Atsushi; Kawarada, Hiroshi
err分享
err收藏
(111) vertical-type two-dimensional hole gas diamond MOSFETs with hexagonal trench structures
errCARBON
IF11.6
err2021-05-01
err9
PREAI
errTsunoda, Jun; Iwataki, Masayuki; Oi, Nobutaka; Morishita, Aoi; Hiraiwa, Astushi; Kawarada, Hiroshi
err分享
err收藏
C-Si bonded two-dimensional hole gas diamond MOSFET with normally-off operation and wide temperature range stability
errCARBON
IF11.6
err2021-04-01
err30
PREAI
errBi, Te; Chang, Yuhao; Fei, Wenxi; Iwataki, Masayuki; Morishita, Aoi; Fu, Yu; Niikura, Naoya; Kawarada, Hiroshi
err分享
err收藏