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K

Kai Su

xidian university

H指数:10

被引数:375

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A >2.5 kV, 93 ps GaN Diode Avalanche Shaper With 1.68 GW/cm² Peak Power Density

>2.5 kV，93 ps GaN 二极管雪崩整形器，其峰值功率密度为 1.68 GW/cm<sup>2</sup>

IEEE Electron Device Letters

IF4.5

2026-04-080

PRE

A γ-irradiated AlGaN/GaN Schottky barrier diode with barrier-decreased Schottky junction and high breakdown voltage

一种经γ射线辐照的AlGaN/GaN肖特基势垒二极管，具有势垒降低的肖特基结和高击穿电压

Journal of Semiconductors

IF5.3

2025-12-010

PRE

Electrical properties of normally-on hydrogenated Si-terminated diamond field effect transistors

常开氢化Si终止金刚石场效应晶体管的电学特性

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2025-06-010

PRE

High quality heavy Sn doping (β-Ga2O3 film with high mobility grown by time division transport Metal Organic Chemical Vapor Deposition

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2024-10-010

PRE

The heterointerface characterization of BaF2 or MgF2 on the hydrogenated diamond by X-ray photoelectron spectroscopy

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-08-010

PRE

Single-crystal diamond grown through high-power-density epitaxy used for a high-performance radiation detector

通过用于高性能辐射探测器的高功率密度外延生长的单晶金刚石

SCIENCE CHINA-MATERIALS

IF7.4

2024-06-110

PRE

Current transport mechanism of AlGaN-channel Schottky barrier diode with extremely low leakage current and high blocking voltage of 2.55 kV

APPLIED PHYSICS LETTERS

IF3.6

2022-02-285

PRE

Diamond MOSFET with MoO3/Si3N4 doubly stacked gate dielectric

APPLIED PHYSICS LETTERS

IF3.6

2022-01-288

PRE

Simple and Convenient Interface Modification by Nanosized Diamond for Carbon Based All-Inorganic CsPbIBr2 Solar Cells

ACS APPLIED ENERGY MATERIALS

IF5.5

2021-06-096

PREAI

Device performance of chemical vapor deposition monocrystal diamond radiation detectors correlated with the bulk diamond properties

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2021-01-256

PRE

High performance hydrogen/oxygen terminated CVD single crystal diamond radiation detector

APPLIED PHYSICS LETTERS

IF3.6

2020-03-0320

PREAI

High temperature (300°C) ALD grown Al2O3 on hydrogen terminated diamond: Band offset and electrical properties of the MOSFETs

APPLIED PHYSICS LETTERS

IF3.6

2020-01-0245

PREAI

Normally-Off Hydrogen-Terminated Diamond Field Effect Transistor With Ferroelectric HfZrOx/Al2O3 Gate Dielectrics

IF3.6

2020-01-0111

OAAI

Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al2O3 Gate Dielectric

IF3.6

2020-01-019

OAAI

Gamma irradiation impact on GaN quasi-vertical Schottky barrier diodes

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2019-11-118

PREAI

Growth and Characterization of the Laterally Enlarged Single Crystal Diamond Grown by Microwave Plasma Chemical Vapor Deposition

CHINESE PHYSICS LETTERS

IF4.2

2018-07-1710

PREAI