Masanaga Fukasawa

national institute of advanced industrial science & technology (aist)

20H指数

85论文数

1.4K被引数

收录论文 6

发表时间

Breakthrough in 19 nm half-pitch W damascene interconnects using nanoimprint lithography and atomic-scale processing 采用纳米压印光刻和原子级加工实现19 nm半间距W镶嵌互连技术的突破

Japanese Journal of Applied Physics

IF1.8

2026-04-30

PREAI

Suzuki, Kenta; Ueda, Tetsuya; Kasashima, Yuji; Mizubayashi, Wataru; Okada, Naoya; Ota, Hiroyuki; Fukasawa, Masanaga; Hayashi, Yoshihiro; Ishida, Masaki; Funayoshi, Tomomi; Hiura, Hiromi; Kagawa, Masayuki; Hasegawa, Noriyasu; Yamamoto, Kiyohito

The effect of atomic layer etching (ALE) processes on polyhydroxystyrene-based EUV chemical amplification resist 原子层刻蚀(ALE)工艺对聚羟基苯乙烯基EUV化学放大抗蚀剂的影响

Japanese Journal of Applied Physics

IF1.8

2026-02-27

PREAI

Santillan, Julius Joseph; Fukasawa, Masanaga; Itani, Toshiro; Mizubayashi, Wataru

1X nm half-pitch pattern transfer using a spin-on glass and amorphous carbon hard mask for nanoimprint lithography 采用旋涂玻璃和非晶碳硬质掩模进行1X nm半节距图案转移的纳米压印光刻

Japanese Journal of Applied Physics

IF1.8

2026-01-30

PREAI

Suzuki, Kenta; Hamamoto, Ryosuke; Kasashima, Yuji; Ueda, Tetsuya; Mizubayashi, Wataru; Fukasawa, Masanaga; Hayashi, Yoshihiro; Ishida, Masaki; Funayoshi, Tomomi; Hiura, Hiromi; Kagawa, Masayuki; Hasegawa, Noriyasu; Yamamoto, Kiyohito

Radical, ion, and photon's effects on defect generation at SiO2/Si interface during plasma etching

APPLIED SURFACE SCIENCE

IF6.9

2024-11-01

PREAI

Nunomura, Shota; Tsutsumi, Takayoshi; Takada, Noriharu; Fukasawa, Masanaga; Hori, Masaru

Surface chemical reactions of etch stop prevention in plasma-enhanced atomic layer etching of silicon nitride 氮化硅的等离子体增强原子层蚀刻中防止蚀刻停止的表面化学反应

SURFACE & COATINGS TECHNOLOGY

IF6.1

2024-02-01

PREAI

Tercero, Jomar U.; Hirata, Akiko; Isobe, Michiro; Karahashi, Kazuhiro; Fukasawa, Masanaga; Hamaguchi, Satoshi