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Reductive Thermal Atomic Layer Deposition Process for Gold
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DOI：10.1021/acsmaterialsau.2c00075.png)
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摘要
En 中文
In this work, we developed an atomic layer deposition(ALD) processfor gold metal thin films from chloro-(triethylphosphine)-gold-(I) [AuCl-(PEt3)] and 1,4-bis-(trimethylgermyl)-1,4-dihydropyrazine [(Me3Ge)(2)DHP]. High purity gold films were depositedon different substrate materials at 180 degrees C for the first timewith thermal reductive ALD. The growth rate is 1.7 angstrom/cycle afterthe film reaches full coverage. The films have a very low resistivityclose to the bulk value, and a minimal amount of impurities couldbe detected. The reaction mechanism of the process is studied in situwith a quartz crystal microbalance and a quadrupole mass spectrometer.
Keyword:
atomic layer deposition
gold
thin films
reducing agent
gold halide adducts
germyldihydropyrazine
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期刊
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6.3
论文数:
549
被引数:
685
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