J. Franco - Publications, H-index & Citations

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J. Franco

IMEC

38H-index

341Paper Count

5.7KCitation Count

Published Papers 10

Publication Date

Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative V_T Shift Revealed via DC and 1/f Noise Measurements

IEEE Electron Device Letters

IF4.5

2026-03-19

PREAI

R. Asanovski; P. Rinaudo; A. Chasin; Y. Zhao; H. F. W. Dekkers; M. J. van Setten; D. Matsubayashi; N. Rassoul; A. Belmonte; G. S. Kar; B. Kaczer; J. Franco

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Low-frequency noise characteristics of waveguide-integrated lateral and vertical Ge-on-Si p-i-n photodiodes

JOURNAL OF APPLIED PHYSICS

IF2.5

2025-10-21

PREAI

Musibau, Solomon; Arnold, Kellen P.; Veluri, Anurag R.; Franco, Jacopo; Tsiara, Artemisia; Croes, Kristof; Van Campenhout, Joris; Schrimpf, Ronald D.; Reed, Robert A.; De Wolf, Ingrid; Fleetwood, Daniel M.

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Unified Analysis of Time-Dependent Dielectric Breakdown to Extend Reliability Margins

IEEE Transactions on Electron Devices

IF3.2

2025-10-06

PREAI

A. Vici; L. Pantisano; P. J. Roussel; A. Chasin; J. Franco; B. Kaczer; I. Meric; S. M. Ramey; R. Degraeve; J. Hicks

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Markov model describing progressive degradation of local percolation path in thin oxides

SOLID-STATE ELECTRONICS

IF1.4

2025-10-01

PREAI

Sacchi, Sara; Varanasi, Anirudh; Degraeve, Robin; Vici, Andrea; Molinaro, Giorgio; Franco, Jacopo; Roussel, Philippe; Kaczer, Ben; Merckling, Clement

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A Pragmatic Model to Predict Future Device Aging

IEEE ACCESS

IF3.6

2023-01-01

OAAI

Brown, James; Tok, Kean Hong; Gao, Rui; Ji, Zhigang; Zhang, Weidong; Marsland, John S.; Chiarella, Thomas; Franco, Jacopo; Kaczer, Ben; Linten, Dimitri; Zhang, Jian Fu

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Systematic study of interfacial reactions induced by metal electrodes in high-k/InGaAs gate stacks

APPLIED PHYSICS LETTERS

IF3.6

2016-10-24

PREAI

Yoshida, S.; Lin, D.; Vais, A.; Alian, A.; Franco, J.; El Kazzi, S.; Mols, Y.; Miyanami, Y.; Nakazawa, M.; Collaert, N.; Watanabe, H.; Thean, A.

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Impact of starting measurement voltage relative to flat-band voltage position on the capacitance-voltage hysteresis and on the defect characterization of InGaAs/high-k metal-oxide-semiconductor stacks

APPLIED PHYSICS LETTERS

IF3.6

2015-12-03

PREAI

Vais, Abhitosh; Franco, Jacopo; Lin, Han-Chung; Collaert, Nadine; Mocuta, Anda; De Meyer, Kristin; Thean, Aaron

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Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

APPLIED PHYSICS LETTERS

IF3.6

2015-09-02

OAAI

Wu, Tian-Li; Marcon, Denis; Bakeroot, Benoit; De Jaeger, Brice; Lin, H. C.; Franco, Jacopo; Stoffels, Steve; Van Hove, Marleen; Roelofs, Robin; Groeseneken, Guido; Decoutere, Stefaan

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Understanding the Basic Advantages of Bulk FinFETs for Sub- and Near-Threshold Logic Circuits From Device Measurements

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS

IF4.9

2012-07-01

PREAI

Crupi, F.; Alioto, M.; Franco, J.; Magnone, P.; Togo, M.; Horiguchi, N.; Groeseneken, G.

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Depth localization of positive charge trapped in silicon oxynitride field effect transistors after positive and negative gate bias temperature stress

APPLIED PHYSICS LETTERS

IF3.6

2011-05-05

PREAI

Toledano-Luque, M.; Kaczer, B.; Roussel, Ph J.; Franco, J.; Ragnarsson, L. A.; Grasser, T.; Groeseneken, G.

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Research Directions