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Y

Yang, Han

Chinese Academy of Sciences

0H-index
1Paper Count
0Citation Count
Published Papers 1
Publication Date
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GaN high electron mobility transistors with a breakdown voltage over 2500 V achieved by low temperature MBE growth, subdivision of channel, and single field plate structure
errAPPLIED PHYSICS EXPRESS
IF2.2
err2025-11-01
err0
PREAI
errYang, Zhichao; Liao, Eason; Ding, Daniel; Zhuang, Jungang; Dong, Hao; Yang, Han; Zhu, Lei; Zhang, Bingliang; Yu, Guohao; Zeng, Zhongming; Zhang, Baoshun
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朱磊 cover
朱磊 (Lei Zhu)
H-index: 109 · Papers: 6.1K
B
Bingliang Zhang
H-index: 25 · Papers: 102
D
Dong Hao
H-index: 23 · Papers: 93
G
Guohao Yu
H-index: 22 · Papers: 148
B
Baoshun Zhang
H-index: 20 · Papers: 130
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