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SaveShare Save Share Save Share Save Share Save Over 20 % improvement of current-gain cut off frequency 0.3 μm AlGaN/GaN HEMTs with ultra-low Von Schottky Drain for broadband application
Lin, Zhe; Ding, Jihong; He, Hanzhao; Liu, Dongsheng; Huang, Wei; Li, Liang; Zhang, D. W.; Yu, Hao; Song, Xubo; Lv, Yuanjie; Feng, Zhihong; Fang, Baitong; Zhang, Kai; Zhang, Debin Share Save The Trapping Mechanism at the AlGaN/GaN Interface and the Turn-On Characteristics of the p-GaN Direct-Coupled FET Logic InvertersYu, Junfeng; Ding, Jihong; Wang, Tao; Huang, Yukai; Du, Wenzhang; Liang, Jiao; Ma, Hongping; Zhang, Qingchun; Li, Liang; Huang, Wei; Zhang, Wei Share Save Trapping mechanism transition of γ-ray irradiation on p-GaN gate stack on gate applying voltage swingZhu, Junyan; Ding, Jihong; Ouyang, Keqing; Zou, Xinbo; Ma, Hongping; Li, Liang; Zhang, Debin; Zhou, Jianjun; Qiu, Yiwu; Zhou, Xinjie; Wang, Tao; Huang, Wei; Zhang, David Wei Share Save Share Save Time-aware multi-behavior graph network model for complex group behavior predictionYu, Xiao; Li, Weimin; Zhang, Cai; Wang, Jingchao; Zhao, Yan; Liu, Fangfang; Pan, Quanke; Liu, Huazhong; Ding, Jihong; Chen, Dehua Share Save Share Save Share Save Share Save Share Save Share Save Share Save Share Save 
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