Benoit Bakeroot - Publications, H-index & Citations

Benoit Bakeroot

IMEC

31H指数

156论文数

3.0K被引数

收录论文 20

发表时间

Analysis of Trap-Induced Dynamic Degradation in AlGaN/GaN Gated-Edge Termination Schottky Barrier Diodes Under Continuous Switching Operation 在连续开关操作下AlGaN/GaN栅极边缘终止肖特基势垒二极管中陷阱诱导动态退化的分析

IEEE Transactions on Electron Devices

IF3.2

2026-08-06

PREAI

Zhen-Hong Huang; Benoit Bakeroot; Olga Syshchyk; Ching-Chia Lee; Yu-Teng Tso; Pei-Jung Wang; Dirk Wellekens; Niels Posthuma; Sheng-Shiuan Yeh; Stefaan Decoutere; Tian-Li Wu

Thermal Characterization of 650 V GaN HEMTs on 200 mm Engineered Substrates 650 V GaN HEMTs在200 mm工程衬底上的热特性表征

IEEE Electron Device Letters

IF4.5

2026-02-23

OAAI

Zequan Chen; James W. Pomeroy; Zeina Abdallah; Leo Norman; Peng Huang; Matthew D. Smith; Anurag Vohra; Sujit Kumar; Stefaan Decoutere; Benoit Bakeroot; Martin Kuball

Poole-Frenkel emission and bulk charge trapping in AlON deposited on GaN and comparison to Al2O3 Poole-Frenkel发射和在GaN上沉积的AlON中的体电荷俘获及其与Al₂O₃的比较

Journal of Applied Physics

IF2.5

2026-01-14

OAAI

Goncalez Filho, Walter; Borga, Matteo; Geens, Karen; Khan, Md Arif; Cingu, Deepthi; Chatterjee, Urmimala; Decoutere, Stefaan; Knaepen, Werner; Kizir, Seda; Arnou, Panagiota; Bakeroot, Benoit

Charge Transport in GaN High Electron Mobility Transistor With Positive Substrate Bias GaN高电子迁移率晶体管在正衬底偏置下的电荷输运

IEEE Transactions on Electron Devices

IF3.2

2025-07-01

PREAI

Peng Huang; Matthew D. Smith; Michael J. Uren; Zequan Chen; Benoit Bakeroot; Anurag Vohra; Stefaan Decoutere; Martin Kuball

Time-dependent conduction mechanisms in reversed stepped superlattice layers of GaN HEMTs on 200 mm engineered substrates

APPLIED PHYSICS LETTERS

IF3.6

2024-08-28

OAAI

Chen, Zequan; Uren, Michael J.; Huang, Peng; Sanyal, Indraneel; Smith, Matthew D.; Vohra, Anurag; Kumar, Sujit; Decoutere, Stefaan; Bakeroot, Benoit; Kuball, Martin

Mg activation anneal of the p-GaN body in trench gate MOSFETs and its effect on channel mobility and threshold voltage stability

APPLIED PHYSICS LETTERS

IF3.6

2024-03-12

PREAI

Goncalez Filho, Walter; Borga, Matteo; Geens, Karen; Khan, Md Arif; Cingu, Deepthi; Chatterjee, Urmimala; Vohra, Anurag; Decoutere, Stefaan; Bakeroot, Benoit

Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing

SCIENTIFIC REPORTS

IF3.9

2023-09-23

OAAI

Goncalez Filho, Walter; Borga, Matteo; Geens, Karen; Cingu, Deepthi; Chatterjee, Urmimala; Banerjee, Sourish; Vohra, Anurag; Han, Han; Minj, Albert; Hahn, Herwig; Marx, Matthias; Fahle, Dirk; Bakeroot, Benoit; Decoutere, Stefaan

Correlating Structural and Electrical Characteristics of Threading Dislocations in GaN-on-Si Heterostructures and p-n Diodes by Multiple Microscopy Techniques

PHYSICAL REVIEW APPLIED

IF4.4

2023-03-24

OAAI

Minj, Albert; Geens, Karen; Liang, Hu; Han, Han; Noel, Celine; Bakeroot, Benoit; Paredis, Kristof; Zhao, Ming; Hantschel, Thomas; Decoutere, Stefaan

Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application

APPLIED PHYSICS LETTERS

IF3.6

2022-06-28

OAAI

Vohra, Anurag; Geens, Karen; Zhao, Ming; Syshchyk, Olga; Hahn, Herwig; Fahle, Dirk; Bakeroot, Benoit; Wellekens, Dirk; Vanhove, Benjamin; Langer, Robert; Decoutere, Stefaan

Study and characterization of GaN MOS capacitors: Planar vs trench topographies

APPLIED PHYSICS LETTERS

IF3.6

2022-04-04

OAAI

Mukherjee, K.; De Santi, C.; You, S.; Geens, K.; Borga, M.; Decoutere, S.; Bakeroot, B.; Diehle, P.; Altmann, F.; Meneghesso, G.; Zanoni, E.; Meneghini, M.

Investigating the Current Collapse Mechanisms of p-GaN Gate HEMTs by Different Passivation Dielectrics 不同钝化介质对p-gan栅hemt电流崩塌机制的研究

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2021-05-01

OAAI

Li, Xiangdong; Posthuma, Niels; Bakeroot, Benoit; Liang, Hu; You, Shuzhen; Wu, Zhicheng; Zhao, Ming; Groeseneken, Guido; Decoutere, Stefaan

Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

MATERIALS

IF3.2

2021-04-29

OAAI

Mukherjee, Kalparupa; De Santi, Carlo; Borga, Matteo; Geens, Karen; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; Diehle, Patrick; Huebner, Susanne; Altmann, Frank; Buffolo, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo

Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n-n Diodes: The Road to Reliable Vertical MOSFETs

MICROMACHINES

IF3

2021-04-16

OAAI

Mukherjee, Kalparupa; De Santi, Carlo; Buffolo, Matteo; Borga, Matteo; You, Shuzhen; Geens, Karen; Bakeroot, Benoit; Decoutere, Stefaan; Gerosa, Andrea; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo

Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs

MICROMACHINES

IF3

2021-02-15

OAAI

Wang, Jie; Chen, Zhanfei; You, Shuzhen; Bakeroot, Benoit; Liu, Jun; Decoutere, Stefaan

Imaging confined and bulk p-type/n-type carriers in (Al,Ga)N heterostructures with multiple quantum wells

APPLIED PHYSICS LETTERS

IF3.6

2021-01-21

OAAI

Minj, A.; Zhao, M.; Bakeroot, B.; Paredis, K.

Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability

MATERIALS

IF3.2

2020-10-23

OAAI

Mukherjee, Kalparupa; De Santi, Carlo; Borga, Matteo; You, Shuzhen; Geens, Karen; Bakeroot, Benoit; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

APPLIED PHYSICS LETTERS

IF3.6

2015-09-02

OAAI

Wu, Tian-Li; Marcon, Denis; Bakeroot, Benoit; De Jaeger, Brice; Lin, H. C.; Franco, Jacopo; Stoffels, Steve; Van Hove, Marleen; Roelofs, Robin; Groeseneken, Guido; Decoutere, Stefaan

A 16 Channel High-Voltage Driver with 14 Bit Resolution for Driving Piezoelectric Actuators

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS

IF5.2

2015-07-01

OAAI

Pierco, Ramses; Torfs, Guy; Verbrugghe, Jochen; Bakeroot, Benoit; Bauwelinck, Johan

Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode

APPLIED PHYSICS LETTERS

IF3.6

2015-02-24

OAAI

Hu, J.; Stoffels, S.; Lenci, S.; Bakeroot, B.; Venegas, R.; Groeseneken, G.; Decoutere, S.

Modeling and Analysis of Terminal Capacitances in High-Power Devices: Application to p-GaN Gate HEMTs 大功率器件终端电容的建模与分析：在p-GaN栅HEMT中的应用

IEEE Transactions on Electron Devices

IF3.2

PREAI

Mojtaba Alaei; Herbert De Pauw; Elena Fabris; Stefaan Decoutere; Jan Doutreloigne; Johan Lauwaert; Benoit Bakeroot

研究方向