Junjie Yang - Publications, H-index & Citations

Junjie Yang

Peking University

14H指数

85论文数

641被引数

收录论文 18

发表时间

GaN-on-Si JBS Diode Using Drive-In Diffusion to Shield p-GaN Regrowth Interface and Achieving a Breakdown Voltage Beyond 1 kV 采用驱动扩散屏蔽p-GaN再生长界面并实现超过1 kV击穿电压的Si上GaN JBS二极管

IEEE Electron Device Letters

IF4.5

2026-09-01

PREAI

Liu, Sihang; Fu, Xingyu; Yang, Junjie; Cui, Jiawei; Chen, Zhenghao; Yang, Han; Li, Teng; Huang, Yuqi; Wang, Maojun; Shen, Bo; Yang, Xuelin; Wei, Jin

Monolithically integrating polarization-doped InGaN p-FET and GaN n-FET for complementary logic circuitry 将极化掺杂InGaN p-FET与GaN n-FET单片集成用于互补逻辑电路

Science Advances

IF12.5

2026-08-07

OAAI

Jingjing Yu; Teng Li; Yunhong Lao; Junjie Yang; Jiawei Cui; Sihang Liu; Han Yang; Youyi Yin; Maojun Wang; Xuelin Yang; Kevin J. Chen; Bo Shen; Jin Wei

Semiconducting p-GaN gate HEMT with avalanche-like non-destructive breakdown capability 半导体p-GaN栅极HEMT，具有类雪崩非破坏性击穿能力

Journal of Applied Physics

IF2.5

2026-05-28

PREAI

Yu, Jingjing; Yang, Junjie; Zheng, Qian; Liu, Sihang; Wang, Maojun; Yang, Xuelin; Shen, Bo; Wei, Jin

A Semi-Floating Gate GaN Memory Cell 半浮栅GaN存储单元

IEEE Electron Device Letters

IF4.5

2026-04-28

PREAI

Youyi Yin; Teng Li; Yunhong Lao; Junjie Yang; Hao Chang; Han Yang; Xuelin Yang; Maojun Wang; Yimao Cai; Bo Shen; Jin Wei

10000-Cycle/10-μs Short Circuit Operation in 650-V E-Mode p-GaN Gate HEMT With Schottky Source Extension 10000-周期/10-μs短路操作在650-V E-Mode p-GaN栅高电子迁移率晶体管（HEMT）中的应用，该晶体管带有肖特基源扩展。

IEEE Transactions on Electron Devices

IF3.2

2026-02-03

PREAI

Yunhong Lao; Jingjing Yu; Qian Zheng; Junjie Yang; Youyi Yin; Teng Li; Qimeng Jiang; Gaofei Tang; Maojun Wang; Jin Wei

Dynamic instabilities in GaN power devices: mechanisms, challenges and advancements GaN功率器件中的动态不稳定性：机理、挑战与进展

Japanese Journal of Applied Physics

IF1.8

2026-01-30

PREAI

Yang, Junjie; Cui, Jiawei; Wu, Yanlin; Yu, Jingjing; Li, Teng; Nuo, Muqin; Wei, Jin

Enhancing Fatigue-Resistant Electrical Actuation and Energy Dissipation in Squid-Inspired Gel Bionic Artificial Muscles (GBAMs) Using Covalently Cross-Linked Polyacrylamide for Superior Stability 使用共价交联的聚丙烯酰胺增强鱿鱼启发的凝胶仿生人工肌肉 (gbam) 的乏力电致动和能量耗散，以实现卓越的稳定性

LANGMUIR

IF3.9

2026-01-01

PREAI

Yang, Junjie; Sha, Tong; Jiang, Zhen; Fang, Mingjian; Wen, Yuan; Wang, Shengong

7 kV/16.5 mΩcm2 E-mode active-passivation p-GaN gate HEMT exceeding SiC unipolar limit 7 kV/16.5 mΩcm² E-mode活性-钝化p-GaN栅极HEMT超越SiC单极性极限

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

IF2.1

2025-11-30

PREAI

Liu, Sihang; Cui, Jiawei; Yang, Junjie; Liu, Hongru; Li, Teng; Yu, Jingjing; Lao, Yunhong; Qi, Hengyuan; Duan, Jialin; Wang, Maojun; Liu, Xiaosen; Wei, Jin

Impact of Extrinsic Resistance on Current Density of E-Mode GaN p-FETs: TCAD Study and Experimental Validation 外因电阻对E-模式GaN p-FETs电流密度的影响：TCAD研究与实验验证

IEEE Transactions on Electron Devices

IF3.2

2025-10-06

PREAI

Jialin Duan; Teng Li; Jingjing Yu; Hengyuan Qi; Yingming Song; Yunhong Lao; Junjie Yang; Youyi Yin; Xuelin Yang; Maojun Wang; Bo Shen; Jinyan Wang; Jin Wei

Demonstration of One Transistor-One Diode (1T1D) p-GaN/AlGaN/GaN Memory Cell 单晶体管-单二极管(1T1D) p-GaN/AlGaN/GaN存储单元的演示

IEEE Electron Device Letters

IF4.5

2025-08-01

PREAI

Youyi Yin; Teng Li; Junjie Yang; Jingjing Yu; Yunhong Lao; Hao Chang; Jialin Duan; Xiaosen Liu; Maojun Wang; Kechao Tang; Yimao Cai; Bo Shen; Jin Wei

900-V active-passivation p-GaN gate HEMT with suppressed floating Si substrate induced back-gating effect

APPLIED PHYSICS LETTERS

IF3.6

2025-04-21

PREAI

Chang, Hao; Yang, Junjie; Yu, Jingjing; Cui, Jiawei; Yin, Youyi; Yang, Xuelin; Liu, Xiaosen; Wang, Maojun; Shen, Bo; Wei, Jin

GaN-on-sapphire JTE-anode lateral field-effect rectifier for improved breakdown voltage (>2.5 kV) and dynamic RON 蓝宝石上GaN JTE阳极横向场效应整流器，可提高击穿电压 (>2.5 kV) 和动态RON

APPLIED PHYSICS LETTERS

IF3.6

2024-10-22

PREAI

Cui, Jiawei; Yang, Junjie; Yu, Jingjing; Li, Teng; Yang, Han; Liu, Xiaosen; Wang, Jinyan; Wang, Maojun; Shen, Bo; Wei, Jin

Enhanced robustness against hot-electron-induced degradation in active-passivation p-GaN gate HEMT

APPLIED PHYSICS LETTERS

IF3.6

2024-03-04

PREAI

Yang, Junjie; Wei, Jin; Wu, Yanlin; Yu, Jingjing; Cui, Jiawei; Yang, Xuelin; Liu, Xiaosen; Wang, Jinyan; Hao, Yilong; Wang, Maojun; Shen, Bo

Excitations of Intercalated Metal Monolayers in Transition Metal Dichalcogenides 过渡金属二硫化物中插层金属单层的激发

NANO LETTERS

IF9.1

2020-12-02

OAAI

Fan, Shiyu; Neal, Sabine; Won, Choongjae; Kim, Jaewook; Sapkota, Deepak; Huang, Feiting; Yang, Junjie; Mandrus, David G.; Cheong, Sang-Wook; Haraldsen, Jason T.; Musfeldt, Janice L.

Core structure and mobility of edge dislocations in face-centered-cubic chemically complex NiCoFe and NiCoFeCu equiatomic solid-solution alloys

MATERIALIA

IF2.9

2020-03-01

OAAI

Li, Wei; Rao, Satish, I; Wang, Qingyuan; Fan, Haidong; Yang, Junjie; El-Awady, Jaafar A.

Tracking the continuous spin-flop transition in Ni3TeO6 by infrared spectroscopy

PHYSICAL REVIEW B

IF3.7

2015-10-08

OAAI

Yokosuk, Michael O.; Artyukhin, Sergey; al-Wahish, Amal; Wang, Xueyun; Yang, Junjie; Li, Zhiqiang; Cheong, Sang-Wook; Vanderbilt, David; Musfeldt, Janice L.

Interlocked chiral/polar domain walls and large optical rotation in Ni3TeO6

APL MATERIALS

IF4.5

2015-07-24

OAAI

Wang, Xueyun; Huang, Fei-Ting; Yang, Junjie; Oh, Yoon Seok; Cheong, Sang-Wook

Spin-induced band modifications of graphene through intercalation of magnetic iron atoms

NANOSCALE

IF5.1

2014-01-01

OAAI

Sung, S. J.; Yang, J. W.; Lee, P. R.; Kim, J. G.; Ryu, M. T.; Park, H. M.; Lee, G.; Hwang, C. C.; Kim, Kwang. S.; Kim, J. S.; Chung, J. W.

研究方向