Mireia Bargalló González

Institut de Microelectrònica de Barcelona

25H指数

241论文数

2.4K被引数

收录论文 25

发表时间

Modeling and Simulation of Hysteron Dynamics in HfO₂-Based Memristive Devices HfO₂基忆阻器中 hysterons 动态的建模与仿真

IEEE Electron Device Letters

IF4.5

2026-03-30

OAAI

E. Miranda; H. García; G. Vinuesa; J. Suñé; F. Campabadal; M. B. González; H. Castán; S. Dueñas

Multilevel conductance modulation in HfO2, Al2O3, and HfO2/Al2O3 bilayer memristors HfO2、Al2O3和HfO2/Al2O3双层忆阻器中的多级电导率调制

SOLID-STATE ELECTRONICS

IF1.4

2025-11-01

PREAI

Garcia, H.; Vinuesa, G.; del Val, T.; Kalam, K.; Gonzalez, M. B.; Campabadal, F.; Duenas, S.; Castan, H.

Effect of set and reset dynamics on HfO2, Al2O3, and bilayer memristors 设置和复位动力学对HfO2、Al2O3和双层忆阻器的影响

SOLID-STATE ELECTRONICS

IF1.4

2025-10-01

PREAI

Vinuesa, G.; del Val, T.; Kalam, K.; Garcia, H.; Gonzalez, M. B.; Campabadal, F.; Duenas, S.; Castan, H.

Statistical, simulation and modeling analysis of variability in memristors with single and bilayer dielectrics of HfO2 and Al2O3, a comparison HfO2和Al2O3单层及双层介电材料的忆阻器中变异性的统计分析、模拟与建模比较

CHAOS SOLITONS & FRACTALS

IF5.6

2025-07-01

PREAI

Cantudo, A.; Jimenez-Molinos, F.; Ruiz, P. Q.; Lopez, A.; Villena, M. A.; Gonzalez, M. B.; Campabadal, F.; Roldan, J. B.

Reset transition in HfO2-Based memristors using a constant power signal

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2025-02-01

PREAI

Garcia, Hector; Vinuesa, Guillermo; Gonzalez, Mireia B.; Campabadal, Francesca; Castan, Helena; Duenas, Salvador

Thermal dependence of the current in TiN/Ti/HfO2/W memristors at different intermediate conduction states

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-08-01

OAAI

Jimenez-Molinos, F.; Vinuesa, G.; Garcia, H.; Duenas, S.; Castan, H.; Gonzalez, M. B.; Campabadal, F.; Roldan, J. B.

Variability in HfO2-based memristors described with a new bidimensional statistical technique

NANOSCALE

IF5.1

2024-01-01

OAAI

Acal, C.; Maldonado, D.; Cantudo, A.; Gonzalez, M. B.; Jimenez-Molinos, F.; Campabadal, F.; Roldan, J. B.

A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-01-01

OAAI

Maldonado, D.; Vinuesa, G.; Aldana, S.; Aguirre, F. L.; Cantudo, A.; Garcia, H.; Gonzalez, M. B.; Jimenez-Molinos, F.; Campabadal, R.; Miranda, E.; Duenas, S.; Castan, H.; Roldan, J. B.

Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2023-06-12

PREAI

Garcia, H.; Vinuesa, G.; Garcia-Ochoa, E.; Aguirre, F. L.; Gonzalez, M. B.; Jimenez-Molinos, F.; Campabadal, F.; Roldan, J. B.; Miranda, E.; Duenas, S.; Castan, H.

Variability in Resistive Memories 电阻式存储器的可变性

ADVANCED INTELLIGENT SYSTEMS

IF6.1

2023-03-14

OAAI

Roldan, Juan. B.; Miranda, Enrique; Maldonado, David; Mikhaylov, Alexey. N.; Agudov, Nikolay., V; Dubkov, Alexander. A.; Koryazhkina, Maria. N.; Gonzalez, Mireia. B.; Villena, Marco. A.; Poblador, Samuel; Saludes-Tapia, Mercedes; Picos, Rodrigo; Jimenez-Molinos, Francisco; Stavrinides, Stavros. G.; Salvador, Emili; Alonso, Francisco. J.; Campabadal, Francesca; Spagnolo, Bernardo; Lanza, Mario; Chua, Leon. O.

Thermal Characterization of Conductive Filaments in Unipolar Resistive Memories

MICROMACHINES

IF3

2023-03-10

OAAI

Aguilera-Pedregosa, Cristina; Maldonado, David; Gonzalez, Mireia B.; Moreno, Enrique; Jimenez-Molinos, Francisco; Campabadal, Francesca; Roldan, Juan B.

True Random Number Generator Based on the Variability of the High Resistance State of RRAMs 基于rram高电阻状态可变性的真随机数发生器

IEEE ACCESS

IF3.6

2023-01-01

OAAI

Akbari, Maryam; Mirzakuchaki, Sattar; Arumi, Daniel; Manich, Salvador; Gomez-Pau, Alvaro; Campabadal, Francesca; Gonzalez, Mireia Bargallo; Rodriguez-Montanes, Rosa

Comprehensive study on unipolar RRAM charge conduction and stochastic features: a simulation approach

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2022-01-20

PREAI

Maldonado, D.; Gomez-Campos, F. M.; Gonzalez, M. B.; Roldan, A. M.; Jimenez-Molinos, F.; Campabadal, F.; Roldan, J. B.

Standards for the Characterization of Endurance in Resistive Switching Devices

ACS NANO

IF16

2021-11-03

155

OAAI

Lanza, Mario; Waser, Rainer; Ielmini, Daniele; Yang, J. Joshua; Goux, Ludovic; Sune, Jordi; Kenyon, Anthony Joseph; Mehonic, Adnan; Spiga, Sabina; Rana, Vikas; Wiefels, Stefan; Menzel, Stephan; Valov, Ilia; Villena, Marco A.; Miranda, Enrique; Jing, Xu; Campabadal, Francesca; Gonzalez, Mireia B.; Aguirre, Fernando; Palumbo, Felix; Zhu, Kaichen; Roldan, Juan Bautista; Puglisi, Francesco Maria; Larcher, Luca; Hou, Tuo-Hung; Prodromakis, Themis; Yang, Yuchao; Huang, Peng; Wan, Tianqing; Chai, Yang; Pey, Kin Leong; Raghavan, Nagarajan; Duenas, Salvador; Wang, Tao; Xia, Qiangfei; Pazos, Sebastian

Current transient response and role of the internal resistance in HfOx-based memristors

APPLIED PHYSICS LETTERS

IF3.6

2020-12-28

PREAI

Gonzalez, M. B.; Maestro-Izquierdo, M.; Jimenez-Molinos, F.; Roldan, J. B.; Campabadal, F.

Resistive switching in HfO2 based valence change memories, a comprehensive 3D kinetic Monte Carlo approach

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2020-04-02

PREAI

Aldana, S.; Garcia-Fernandez, P.; Romero-Zaliz, R.; Gonzalez, M. B.; Jimenez-Molinos, F.; Gomez-Campos, F.; Campabadal, F.; Roldan, J. B.

A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2017-07-24

PREAI

Aldana, S.; Garcia-Fernandez, P.; Rodriguez-Fernandez, Alberto; Romero-Zaliz, R.; Gonzalez, M. B.; Jimenez-Molinos, F.; Campabadal, F.; Gomez-Campos, F.; Roldan, J. B.

High Doping Density/High Electric Field, Stress and Heterojunction Effects on the Characteristics of CMOS Compatible p-n Junctions

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2011-01-01

PREAI

Simoen, E.; Eneman, G.; Gonzalez, M. Bargallo; Kobayashi, D.; Luque Rodriguez, A.; Jimenez Tejada, J. -A.; Claeys, C.

Analysis of the Temperature Dependence of Trap-Assisted Tunneling in Ge pFET Junctions

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2011-01-01

OAAI

Gonzalez, M. B.; Eneman, G.; Wang, G.; De Jaeger, B.; Simoen, E.; Claeys, C.