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J

Jongwook Jeon

sungkyunkwan university

19H指数
136论文数
1.0K被引数
收录论文 23
发表时间
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Location-Selective Dual Work-Function Engineering for DRAM Vertical Cell Transistors位置选择性双功函数工程用于DRAM垂直单元晶体管
errIEEE Electron Device Letters
IF4.5
err2026-08-24
err0
PREAI
errDongsik Kong; Hoin Lee; Jae-Hyun Lee; Jongwook Jeon
err分享
err收藏
Lateral Leakage Suppression Using H2 Plasma-Treated SiNx for High-Resolution Organic Displays利用H2等离子体处理的SiNx抑制横向泄漏以实现高分辨率有机显示
errIEEE Electron Device Letters
IF4.5
err2026-01-19
err0
PREAI
errJoohee Oh; Moonchurl Kim; Changyu Park; Byeongjun Joo; Sangho Park; Jongwook Jeon; Hyoungsub Kim
err分享
err收藏
Via-Optimized CFET 6T SRAM: Performance, Stability, Manufacturability, and Scalability
errIEEE Transactions on Electron Devices
IF3.2
err2025-12-12
err0
PREAI
errJimyoung Lee; Saetbyeol Ahn; Jonghun Lee; Jongwook Jeon
err分享
err收藏
Area-Adjusted Comparison of BSPDN Interconnects in CFET: Superiority of Frontside ConnectionCFET中BSPDN互连的面积调整比较：正面连接的优越性
errIEEE Transactions on Electron Devices
IF3.2
err2025-09-29
err0
PREAI
errJimyoung Lee; Seung Kyu Kim; Kwang Young Lee; Jongwook Jeon
err分享
err收藏
Novel p-Type Bulk-Inserted Bitline Pad Structure for Efficient Erase Operation in Vertical NAND Flash Memory新型p型体插入位线垫结构，用于垂直NAND闪存的高效擦除操作
errIEEE Transactions on Electron Devices
IF3.2
err2025-08-01
err0
PREAI
errChoasub Kim; Jiwook Hong; Moonchurl Kim; Hyoungsub Kim; Jongwook Jeon
err分享
err收藏
Impact of Interconnect on Ferroelectric FinFET-Based Logic-in-Memory Circuits at 3-nm Technology Node互连对基于铁电FinFET的存内逻辑电路在3 nm工艺节点的影响
errIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
IF2.9
err2025-05-20
err0
PREAI
errJuhwan Park; Huijun Kim; Hanggyo Jung; Changho Ra; Jongwook Jeon
err分享
err收藏
A Comparative Analysis of Middle-of-Line Contact Architectures for Complementary FETs互补fet中线接触结构的比较分析
errIEEE ACCESS
IF3.6
err2025-01-01
err0
errOAAI
errKim, Seung Kyu; Kim, Johyeon; Choi, Gunhee; Kwon, Kee-Won; Jeon, Jongwook
err分享
err收藏
Efficacy and safety of choline alphoscerate for amnestic mild cognitive impairment: a randomized double-blind placebo-controlled trial
errBMC GERIATRICS
IF3.8
err2024-09-19
err2
errOAAI
errJeon, Jongwook; Lee, Su Young; Lee, Seunghoon; Han, Changwoo; Park, Geum Duck; Kim, Se-Joo; Chang, Jhin Goo; Kim, Woo Jung
err分享
err收藏
High-κ Dielectric (HfO2)/2D Semiconductor (HfSe2) Gate Stack for Low-Power Steep-Switching Computing Devices用于低功耗陡开关计算设备的高 κ 电介质 (HfO2)/2D半导体 (HfSe2) 栅极堆叠
errADVANCED MATERIALS
IF26.8
err2024-04-08
err3
errOAAI
errKang, Taeho; Park, Joonho; Jung, Hanggyo; Choi, Haeju; Lee, Sang-Min; Lee, Nayeong; Lee, Ryong-Gyu; Kim, Gahye; Kim, Seung-Hwan; Kim, Hyung-jun; Yang, Cheol-Woong; Jeon, Jongwook; Kim, Yong-Hoon; Lee, Sungjoo
err分享
err收藏
Analyzing Various Structural and Temperature Characteristics of Floating Gate Field Effect Transistors Applicable to Fine-Grain Logic-in-Memory Devices
errMICROMACHINES
IF3
err2024-03-27
err1
errOAAI
errCho, Sangki; Kim, Sueyeon; Kang, Myounggon; Baik, Seungjae; Jeon, Jongwook
err分享
err收藏
Oxide and 2D TMD semiconductors for 3D DRAM cell transistors
errNANOSCALE HORIZONS
IF6.6
err2024-01-01
err3
PREAI
errHur, Jae Seok; Lee, Sungsoo; Moon, Jiwon; Jung, Hang-Gyo; Jeon, Jongwook; Yoon, Seong Hun; Park, Jin-Hong; Jeong, Jae Kyeong
err分享
err收藏
Investigation on floating-gate field-effect transistor for logic-in-memory application
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2023-09-21
err2
PREAI
errKim, Sueyeon; Cho, Sangki; Choi, Insoo; Kang, Myounggon; Baik, Seungjae; Jeon, Jongwook
err分享
err收藏
Modulation of Contact Resistance of Dual-Gated MoS2 FETs Using Fermi-Level Pinning-Free Antimony Semi-Metal Contacts
errADVANCED SCIENCE
IF14.1
err2023-05-05
err8
errOAAI
errNgo, Tien Dat; Huynh, Tuyen; Jung, Hanggyo; Ali, Fida; Jeon, Jongwook; Choi, Min Sup; Yoo, Won Jong
err分享
err收藏
Investigation of Optimal Architecture of MoS2 Channel Field-Effect Transistors on a Sub-2 nm Process Node
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2023-04-03
err8
PREAI
errPark, Jihun; Jung, Hanggyo; Kwon, Wookyung; Choi, Gunhee; Chang, Jeesoo; Jeon, Jongwook
err分享
err收藏
Accurate Layout-Dependent Effect Model in 10 nm-Class DRAM Process Using Area-Efficient Array Test Circuits
errIEEE ACCESS
IF3.6
err2023-01-01
err0
errOAAI
errKim, Seyoung; Yang, Seungho; Lim, Hyein; Lee, Hyein; Jeon, Jongwook; Choi, Jung Yun; Kim, Jaeha
err分享
err收藏
Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)
errIEEE ACCESS
IF3.6
err2023-01-01
err4
errOAAI
errKim, Sueyeon; Choi, Insoo; Cho, Sangki; Kang, Myounggon; Baik, Seungjae; Ra, Changho; Jeon, Jongwook
err分享
err收藏
Self-Heating and Corner Rounding Effects on Time Dependent Dielectric Breakdown of Stacked Multi-Nanosheet FETs自加热和圆角对堆叠的多纳米片fet随时间变化的介电击穿的影响
errIEEE ACCESS
IF3.6
err2023-01-01
err8
errOAAI
errLim, Jae Won; Yoo, Changhyun; Park, Kiron; Jeon, Jongwook
err分享
err收藏
Device and Circuit Analysis of Double Gate Field Effect Transistor with Mono-Layer WS2-Channel at Sub-2 nm Technology Node
errNANOMATERIALS
IF4.3
err2022-07-04
err3
errOAAI
errPark, Jihun; Ra, Changho; Lim, Jaewon; Jeon, Jongwook
err分享
err收藏
Optimization of Gate-All-Around Device to Achieve High Performance and Low Power with Low Substrate Leakage
errNANOMATERIALS
IF4.3
err2022-02-09
err3
errOAAI
errYoo, Changhyun; Chang, Jeesoo; Park, Sugil; Kim, Hyungyeong; Jeon, Jongwook
err分享
err收藏
Investigation on the Effects of Interconnect RC in 3nm Technology Node Using Path-Finding Process Design Kit使用寻路工艺设计套件研究3nm技术节点中互连RC的影响
errIEEE ACCESS
IF3.6
err2022-01-01
err13
errOAAI
errLee, Yeji; Jang, Wonyeong; Kwon, Kyungbae; Park, Jihun; Yoo, Changhyun; Chang, Jeesoo; Jeon, Jongwook
err分享
err收藏

研究方向

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合作学者
合作期刊
J
Jin‐Hong Park
H 指数: 63 · 论文数: 457
J
Jae Kyeong Jeong
H 指数: 57 · 论文数: 299
C
C. Derek Martin
H 指数: 56 · 论文数: 213
Y
Yong‐Hoon Kim
H 指数: 51 · 论文数: 497
W
Won Jong Yoo
H 指数: 51 · 论文数: 293
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