P. Moens - Publications, H-index & Citations

P. Moens

Ghent University

34H指数

218论文数

4.3K被引数

收录论文 7

发表时间

Signal inversion and defect selectivity in charge pumping electrically detected magnetic resonance of a 4H-SiC n-channel metal-oxide-semiconductor field-effect transistor 信号反转和在4H-SiC n沟道金属-氧化物-半导体场效应晶体管中电荷泵浦电学检测磁共振的缺陷选择性

APPLIED PHYSICS LETTERS

IF3.6

2025-05-21

PREAI

Lettens, Jan; Vandevenne, Ilias; Avramenko, Marina; Vrielinck, Henk; Goovaerts, Etienne; Moens, Peter; Cambre, Sofie

Origin and Recovery of Negative V TH Shift on 4H-SiC MOS Capacitors: An Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-07-01

OAAI

Marcuzzi, A.; Avramenko, M.; De Santi, C.; Geenen, F.; Moens, P.; Meneghesso, G.; Zanoni, E.; Meneghini, M.

An Integrated GaN Overcurrent Protection Circuit for Power HEMTs Using SenseHEMT 基于SenseHEMT的功率hemt集成GaN过流保护电路

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2022-08-01

PREAI

Jiang, Wan Lin; Murray, Samantha Kadee; Zaman, Mohammad Shawkat; De Vleeschouwer, Herbert; Moens, Peter; Roig, Jaume; Trescases, Olivier

β-Gallium oxide power electronics Β-氧化镓电力电子

APL MATERIALS

IF4.5

2022-02-07

322

OAAI

Green, Andrew J.; Speck, James; Xing, Grace; Moens, Peter; Allerstam, Fredrik; Gumaelius, Krister; Neyer, Thomas; Arias-Purdue, Andrea; Mehrotra, Vivek; Kuramata, Akito; Sasaki, Kohei; Watanabe, Shinya; Koshi, Kimiyoshi; Blevins, John; Bierwagen, Oliver; Krishnamoorthy, Sriram; Leedy, Kevin; Arehart, Aaron R.; Neal, Adam T.; Mou, Shin; Ringel, Steven A.; Kumar, Avinash; Sharma, Ankit; Ghosh, Krishnendu; Singisetti, Uttam; Li, Wenshen; Chabak, Kelson; Liddy, Kyle; Islam, Ahmad; Rajan, Siddharth; Graham, Samuel; Choi, Sukwon; Cheng, Zhe; Higashiwaki, Masataka

Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress

APPLIED PHYSICS LETTERS

IF3.6

2019-07-30

PREAI

Masin, F.; Meneghini, M.; Canato, E.; De Santi, C.; Stockman, A.; Zanoni, E.; Moens, P.; Meneghesso, G.

Trapping phenomena and degradation mechanisms in GaN-based power HEMTs

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2018-05-01

OAAI

Meneghini, Matteo; Tajalli, Alaleh; Moens, Peter; Banerjee, Abhishek; Zanoni, Enrico; Meneghesso, Gaudenzio